NCV57200DR2G
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onsemi NCV57200DR2G

Manufacturer No:
NCV57200DR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
ISOLATED COMPACT IGBT GATE DRIVE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NCV57200DR2G, produced by onsemi, is a high-voltage gate driver designed for driving two IGBTs in a half-bridge configuration. This device features one non-isolated low-side gate driver and one galvanic isolated high or low-side gate driver. The galvanic isolation ensures reliable switching in high-power applications, supporting IGBTs that operate up to 800 V. The NCV57200DR2G is optimized for reducing IGBT losses and includes features such as deadtime and interlock logic, accurate asymmetric under-voltage lockout (UVLO) thresholds, and matched propagation delays.

Key Specifications

Parameter Minimum Typical Maximum Unit
High-Side Supply Voltage (VB) - - 900 V
Low-Side and Logic-Fixed Supply Voltage (VDD) 0.3 - 25 V
Logic Input Voltage (HIN, LIN) -0.3 - VDD + 0.3 V
Peak Driver Current, Sink (IPK SNK1) - - 2.3 A
Peak Driver Current, Source (IPK SRC1) - - 1.9 A
Propagation Delay (tPD-ON, tPD-OFF) 60 90 110 ns
Deadtime (tDT1, tDT2) 340 - 350 ns
Maximum Junction Temperature (TJ(max)) - - 150 °C

Key Features

  • High peak current output: +1.9 A / -2.3 A
  • Low output voltage drop for enhanced IGBT conduction
  • Secured output low state without VDD/VB
  • Floating channel for bootstrap operation up to +800 V
  • Common-mode transient immunity (CMTI) up to 50 kV/ms
  • Reliable operation for VS negative swing to -800 V
  • VDD & VBS supply range up to 20 V
  • 3.3 V, 5 V, and 15 V logic input compatibility
  • Asymmetric under-voltage lockout thresholds for high and low sides
  • Matched propagation delay of 90 ns
  • Built-in 20 ns minimum pulse width filter (input noise filter)
  • Built-in 340 ns dead-time and high and low inputs interlock
  • AEC-Q100 qualified and PPAP capable
  • Pb-free, halogen-free/BFR-free, and RoHS compliant

Applications

  • On-Board Chargers (OBC)
  • PTC Heaters
  • e-Compressors
  • Automotive Power Supplies

Q & A

  1. What is the maximum voltage rating for the high-side supply voltage (VB)?

    The maximum voltage rating for the high-side supply voltage (VB) is 900 V.

  2. What are the logic input voltage levels supported by the NCV57200DR2G?

    The device supports 3.3 V, 5 V, and 15 V logic input levels.

  3. What is the peak driver current capability of the NCV57200DR2G?

    The peak driver current capability is +1.9 A for sourcing and -2.3 A for sinking.

  4. Does the NCV57200DR2G have built-in dead-time and interlock features?

    Yes, it has built-in 340 ns dead-time and high and low inputs interlock.

  5. What is the common-mode transient immunity (CMTI) of the NCV57200DR2G?

    The CMTI is up to 50 kV/ms.

  6. Is the NCV57200DR2G qualified for automotive applications?

    Yes, it is AEC-Q100 qualified and PPAP capable.

  7. What is the maximum junction temperature for the NCV57200DR2G?

    The maximum junction temperature is 150°C.

  8. Does the NCV57200DR2G support bootstrap operation?

    Yes, it supports bootstrap operation up to +800 V.

  9. What are the typical applications of the NCV57200DR2G?

    Typical applications include On-Board Chargers (OBC), PTC Heaters, e-Compressors, and Automotive Power Supplies.

  10. Is the NCV57200DR2G RoHS compliant?

    Yes, the device is Pb-free, halogen-free/BFR-free, and RoHS compliant.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Synchronous
Number of Drivers:1
Gate Type:IGBT
Voltage - Supply:20V
Logic Voltage - VIL, VIH:0.9V, 2.4V
Current - Peak Output (Source, Sink):1.9A, 2.3A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):800 V
Rise / Fall Time (Typ):13ns, 8ns
Operating Temperature:-40°C ~ 125°C (TA)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number NCV57200DR2G NCV57201DR2G NCV5700DR2G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Driven Configuration Half-Bridge Half-Bridge High-Side or Low-Side
Channel Type Synchronous Independent Synchronous
Number of Drivers 1 2 -
Gate Type IGBT IGBT IGBT
Voltage - Supply 20V 20V 20V
Logic Voltage - VIL, VIH 0.9V, 2.4V - 0.75V, 4.3V
Current - Peak Output (Source, Sink) 1.9A, 2.3A 1.9A, 2.3A 7.8A, 6.8A
Input Type Non-Inverting Non-Inverting -
High Side Voltage - Max (Bootstrap) 800 V 800 V -
Rise / Fall Time (Typ) 13ns, 8ns 13ns, 8ns 9.2ns, 7.9ns
Operating Temperature -40°C ~ 125°C (TA) - -40°C ~ 125°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 16-SOIC

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