Overview
The NCP5901BDR2G is a high-performance dual MOSFET gate driver produced by ON Semiconductor. It is optimized to drive the gates of both high-side and low-side power MOSFETs in a synchronous buck converter. This device is particularly suited for applications in notebook and desktop systems, offering low switching losses and high efficiency. The NCP5901BDR2G features adaptive anti-cross-conduction and power-saving operation circuits, ensuring reliable and efficient performance.
Key Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| SUPPLY VOLTAGE - VCC Operation Voltage | 4.5 | 13.2 | V | ||
| POWER ON RESET THRESHOLD | 2.75 | 3.2 | V | ||
| UNDERVOLTAGE LOCKOUT - VCC Start Threshold | 3.8 | 4.35 | 4.5 | V | |
| OUTPUT IMPEDANCE, SOURCING CURRENT (Low Side Driver, VCC = 12 V) | 2.0 | 3.5 | Ω | ||
| OUTPUT IMPEDANCE, SINKING CURRENT (Low Side Driver, VCC = 12 V) | 0.8 | 1.8 | Ω | ||
| DRVL RISE TIME (CLOAD = 3 nF) | 16 | 35 | ns | ||
| DRVL FALL TIME (CLOAD = 3 nF) | 11 | 20 | ns | ||
| DRVH RISE TIME (VCC = 5 V, 3 nF load, VBST - VSW = 5 V) | 30 | ns | |||
| DRVH FALL TIME (VCC = 5 V, 3 nF load, VBST - VSW = 5 V) | 27 | ns |
Key Features
- Faster Rise and Fall Times: Ensures quick and efficient switching.
- Adaptive Anti-Cross-Conduction Circuit: Prevents simultaneous conduction of high-side and low-side MOSFETs, reducing switching losses.
- Integrated Bootstrap Diode: Simplifies the bootstrap capacitor connection.
- Pre OV Function: Provides overvoltage protection.
- ZCD Detect: Zero-cross detection for improved efficiency.
- Floating Top Driver: Accommodates boost voltages up to 35 V.
- Output Disable Control: Turns off both MOSFETs for power saving.
- Bidirectional EN Pin: Provides fault signals to the controller for OVP and UVLO conditions.
- Under-Voltage Lockout Function: Ensures outputs are low when the supply voltage is low.
Applications
The NCP5901BDR2G is designed for use in synchronous buck converter topologies, particularly in notebook and desktop systems. It is optimized to work with ON Semiconductor’s NCP6131 multi-phase controller, making it an ideal choice for high-performance power management applications.
Q & A
- What is the primary function of the NCP5901BDR2G?
The NCP5901BDR2G is a dual MOSFET gate driver designed to drive the gates of both high-side and low-side power MOSFETs in a synchronous buck converter.
- What are the key features of the NCP5901BDR2G?
Key features include faster rise and fall times, adaptive anti-cross-conduction circuit, integrated bootstrap diode, pre-OV function, ZCD detect, floating top driver, output disable control, and under-voltage lockout function.
- What is the operating voltage range for VCC?
The VCC operating voltage range is from 4.5 V to 13.2 V.
- What is the purpose of the bidirectional EN pin?
The bidirectional EN pin provides fault signals to the controller when the gate driver detects OVP or UVLO conditions.
- What is the maximum load capacitance the NCP5901BDR2G can drive?
The NCP5901BDR2G can drive up to 3 nF load.
- What is the propagation delay and transition time of the NCP5901BDR2G?
The propagation delay is 25 ns, and the transition time is 20 ns.
- What is the under-voltage lockout (UVLO) threshold?
The UVLO start threshold is between 3.8 V and 4.5 V, with a hysteresis of 150 mV to 250 mV.
- What are the typical rise and fall times for the low-side driver?
The typical rise time is 16 ns to 35 ns, and the fall time is 11 ns to 20 ns for a 3 nF load.
- What is the operating junction temperature range?
The operating junction temperature range is from 0°C to 150°C.
- What package types are available for the NCP5901BDR2G?
The NCP5901BDR2G is available in an 8-SOIC package.
