Overview
The NCD57090BDWR2G is an isolated high-current IGBT/MOSFET gate driver produced by onsemi. This device is part of the NCx57090y and NCx57091y family, designed for high system efficiency and reliability in high-power applications. It features 5 kVrms internal galvanic isolation, making it suitable for demanding environments. The NCD57090BDWR2G accepts complementary inputs and offers various configuration options, including negative power supply and separate high and low driver outputs, enhancing system design flexibility.
Key Specifications
| Parameter | Minimum | Typical | Maximum | Unit |
|---|---|---|---|---|
| Supply Voltage, Input Side (VDD1 - GND1) | -0.3 | - | 22 | V |
| Positive Power Supply, Output Side (VDD2 - GND2) | -0.3 | - | 32 | V |
| Negative Power Supply, Output Side (VEE2 - GND2) | -18 | - | 0.3 | V |
| Differential Power Supply, Output Side (VDD2 - VEE2) | 0 | - | 36 | V |
| Gate-driver Output High Voltage (VOUTH - GND2) | - | - | VDD2 + 0.3 | V |
| Gate-driver Output Sourcing Current (IPK-SRC) | - | - | 6.5 | A |
| Gate-driver Output Sinking Current (IPK-SNK) | - | - | 6.5 | A |
| Ambient Temperature (TA) | -40 | - | 125 | °C |
| Common Mode Transient Immunity (|dVISO/dt|) | - | - | 100 kV/μs | - |
Key Features
- High Peak Output Current: +6.5 A / -6.5 A
- Low Clamp Voltage Drop: Eliminates the need for negative power supply in some configurations
- 5 kVrms Internal Galvanic Isolation: Ensures high system efficiency and reliability
- Complementary Inputs: Accepts both non-inverted and inverted gate driver inputs
- Flexible Configuration Options:
- Active Miller Clamp (version A/D/F)
- Negative Power Supply (version B)
- Separate High and Low Driver Outputs (version C/E)
- Wide Range of Input Bias Voltage: Supports signal levels from 3.3 V to 20 V
- Wide-Body SOIC-8 Package: Convenient for various system designs
Applications
The NCD57090BDWR2G is designed for use in high-power applications, including:
- Industrial Power Supplies
- Motor Drives and Control Systems
- Renewable Energy Systems (e.g., solar and wind power)
- High-Power Switching Applications
- Electric Vehicles and Charging Infrastructure
Q & A
- What is the maximum peak output current of the NCD57090BDWR2G?
The maximum peak output current is +6.5 A / -6.5 A.
- What is the internal galvanic isolation rating of the NCD57090BDWR2G?
The device has 5 kVrms internal galvanic isolation.
- What are the input voltage ranges for the NCD57090BDWR2G?
The device supports input bias voltage and signal levels from 3.3 V to 20 V.
- What is the purpose of the Active Miller Clamp in the NCD57090BDWR2G?
The Active Miller Clamp helps protect the IGBT/MOSFET gate from parasitic turn-on during the off period.
- What is the maximum ambient temperature for the NCD57090BDWR2G?
The maximum ambient temperature is 125°C.
- What is the common mode transient immunity of the NCD57090BDWR2G?
The common mode transient immunity is up to 100 kV/μs.
- What package type is the NCD57090BDWR2G available in?
The device is available in a wide-body SOIC-8 package.
- What are some typical applications for the NCD57090BDWR2G?
Typical applications include industrial power supplies, motor drives, renewable energy systems, high-power switching applications, and electric vehicles.
- How does the under voltage lockout (UVLO) circuit function in the NCD57090BDWR2G?
The UVLO circuit ensures the device operates only when the supply voltage exceeds a certain threshold, preventing malfunction during power-on.
- What is the significance of the negative power supply option in the NCD57090BDWR2G?
The negative power supply option (version B) provides additional flexibility in system design, particularly for applications requiring negative voltage levels.
