MSD602-RT1G
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onsemi MSD602-RT1G

Manufacturer No:
MSD602-RT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 50V 0.5A SC59
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MSD602-RT1G is a bipolar junction transistor (BJT) produced by onsemi, designed for general-purpose amplifier applications. It is an NPN transistor housed in the SC-59 (SOT-23) surface mount package, making it suitable for low-power and compact electronic designs.

Key Specifications

AttributeDescription
Transistor TypeNPN Bipolar Junction Transistor (BJT)
Maximum Collector-Emitter Voltage (Vce)50 V
Maximum Collector Current (Ic)500 mA
Maximum Power Dissipation (Pd)200 mW
Package TypeSC-59 (SOT-23)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low power consumption, making it suitable for energy-efficient designs.
  • Compact SC-59 (SOT-23) package for surface mount applications.
  • General-purpose amplifier capabilities.
  • High reliability and stability in a wide range of operating temperatures.

Applications

The MSD602-RT1G is versatile and can be used in various electronic circuits, including:

  • General-purpose amplifier circuits.
  • Switching applications.
  • Low-power audio amplifiers.
  • Automotive and industrial control systems.

Q & A

  1. What is the maximum collector-emitter voltage of the MSD602-RT1G?
    The maximum collector-emitter voltage is 50 V.
  2. What is the maximum collector current of the MSD602-RT1G?
    The maximum collector current is 500 mA.
  3. What is the package type of the MSD602-RT1G?
    The package type is SC-59 (SOT-23).
  4. What is the maximum power dissipation of the MSD602-RT1G?
    The maximum power dissipation is 200 mW.
  5. What are the typical applications of the MSD602-RT1G?
    It is used in general-purpose amplifier circuits, switching applications, low-power audio amplifiers, and automotive and industrial control systems.
  6. What is the operating temperature range of the MSD602-RT1G?
    The operating temperature range is -55°C to 150°C.
  7. Is the MSD602-RT1G RoHS compliant?
    Yes, the MSD602-RT1G is RoHS compliant.
  8. What is the typical use case for the MSD602-RT1G in audio applications?
    It can be used in low-power audio amplifiers due to its general-purpose amplifier capabilities.
  9. Can the MSD602-RT1G be used in high-power applications?
    No, it is designed for low-power applications with a maximum power dissipation of 200 mW.
  10. Where can I find detailed specifications for the MSD602-RT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 30mA, 300mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 150mA, 10V
Power - Max:200 mW
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SC-59
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Similar Products

Part Number MSD602-RT1G MSD601-RT1G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 150mA, 10V 210 @ 2mA, 10V
Power - Max 200 mW 200 mW
Frequency - Transition - -
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59 SC-59

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