MR751G
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onsemi MR751G

Manufacturer No:
MR751G
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GP 100V 6A MICRODE BUTTON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MR751G is a high-current lead-mounted rectifier from onsemi, designed to offer robust performance and reliability in various power rectification applications. This device is part of the MR750 series, which is known for its high surge capacity and insulated case. The MR751G is a Pb-free version, aligning with modern environmental standards. It features a diffused junction silicon rectifier with a peak repetitive reverse voltage of 100 volts, making it suitable for a wide range of industrial and commercial uses.

Key Specifications

Characteristic Symbol MR751G Unit
Peak Repetitive Reverse Voltage VRRM 100 V
Non-Repetitive Peak Reverse Voltage (Halfwave, single phase, 60 Hz peak) VRSM 120 V
RMS Reverse Voltage VR(RMS) 70 V
Average Rectified Forward Current (Single phase, resistive load, 60 Hz) IO 22 (TL = 60°C, 1/8 in Lead Lengths)
6.0 (TA = 60°C, P.C. Board mounting)
A
Non-Repetitive Peak Surge Current (Surge applied at rated load conditions) IFSM 400 (for 1 cycle) A
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +175 °C
Maximum Instantaneous Forward Voltage Drop (iF = 100 A, TJ = 25°C) vF 1.25 V
Maximum Forward Voltage Drop (IF = 6.0 A, TA = 25°C, 3/8 in leads) VF 0.90 V
Maximum Reverse Current (TJ = 25°C, Rated DC Voltage) IR 25 μA μA

Key Features

  • Current capacity comparable to chassis-mounted rectifiers.
  • Very high surge capacity.
  • Insulated case.
  • Pb-free packages available.
  • Corrosion-resistant finish and readily solderable terminal leads.
  • High forward current ratings with low forward voltage drop.
  • Wide operating and storage junction temperature range (-65°C to +175°C).

Applications

The MR751G is suitable for various applications requiring high-current rectification, including:

  • Power supplies and DC power systems.
  • Industrial control systems.
  • Automotive systems.
  • Telecommunications equipment.
  • High-reliability rectification in harsh environments.

Q & A

  1. What is the peak repetitive reverse voltage of the MR751G?

    The peak repetitive reverse voltage (VRRM) of the MR751G is 100 volts.

  2. What is the maximum non-repetitive peak surge current for the MR751G?

    The maximum non-repetitive peak surge current (IFSM) for the MR751G is 400 amps for one cycle.

  3. What is the operating junction temperature range for the MR751G?

    The operating and storage junction temperature range for the MR751G is -65°C to +175°C.

  4. Is the MR751G Pb-free?
  5. What is the maximum instantaneous forward voltage drop for the MR751G at 100 A and 25°C?

    The maximum instantaneous forward voltage drop (vF) at 100 A and 25°C is 1.25 volts.

  6. What are the typical applications for the MR751G?

    The MR751G is typically used in power supplies, industrial control systems, automotive systems, telecommunications equipment, and other high-reliability rectification applications.

  7. How does the MR751G handle high surge currents?

    The MR751G is designed with very high surge capacity, making it capable of handling significant surge currents.

  8. What is the weight of the MR751G?

    The weight of the MR751G is approximately 2.5 grams.

  9. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C maximum for 10 seconds.

  10. Is the MR751G corrosion-resistant?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):6A
Voltage - Forward (Vf) (Max) @ If:900 mV @ 6 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:25 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:Button, Axial
Supplier Device Package:Microde Button
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number MR751G MR754G MR756G MR752G MR851G MR750G MR751
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi Solid State Inc.
Product Status Obsolete Obsolete Obsolete Obsolete Active Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 400 V 600 V 200 V 100 V 50 V 100 V
Current - Average Rectified (Io) 6A 6A 6A 6A 3A 6A 6A
Voltage - Forward (Vf) (Max) @ If 900 mV @ 6 A 900 mV @ 6 A 900 mV @ 6 A 900 mV @ 6 A 1.25 V @ 3 A 900 mV @ 6 A 900 mV @ 6 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - 300 ns - -
Current - Reverse Leakage @ Vr 25 µA @ 100 V 25 µA @ 400 V 25 µA @ 600 V 25 µA @ 200 V 10 µA @ 100 V 25 µA @ 50 V 25 µA @ 100 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole -
Package / Case Button, Axial Button, Axial Button, Axial Button, Axial DO-201AA, DO-27, Axial Button, Axial -
Supplier Device Package Microde Button Microde Button Microde Button Microde Button Axial Microde Button -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 125°C -65°C ~ 175°C -65°C ~ 175°C

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