MR751G
  • Share:

onsemi MR751G

Manufacturer No:
MR751G
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GP 100V 6A MICRODE BUTTON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MR751G is a high-current lead-mounted rectifier from onsemi, designed to offer robust performance and reliability in various power rectification applications. This device is part of the MR750 series, which is known for its high surge capacity and insulated case. The MR751G is a Pb-free version, aligning with modern environmental standards. It features a diffused junction silicon rectifier with a peak repetitive reverse voltage of 100 volts, making it suitable for a wide range of industrial and commercial uses.

Key Specifications

Characteristic Symbol MR751G Unit
Peak Repetitive Reverse Voltage VRRM 100 V
Non-Repetitive Peak Reverse Voltage (Halfwave, single phase, 60 Hz peak) VRSM 120 V
RMS Reverse Voltage VR(RMS) 70 V
Average Rectified Forward Current (Single phase, resistive load, 60 Hz) IO 22 (TL = 60°C, 1/8 in Lead Lengths)
6.0 (TA = 60°C, P.C. Board mounting)
A
Non-Repetitive Peak Surge Current (Surge applied at rated load conditions) IFSM 400 (for 1 cycle) A
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +175 °C
Maximum Instantaneous Forward Voltage Drop (iF = 100 A, TJ = 25°C) vF 1.25 V
Maximum Forward Voltage Drop (IF = 6.0 A, TA = 25°C, 3/8 in leads) VF 0.90 V
Maximum Reverse Current (TJ = 25°C, Rated DC Voltage) IR 25 μA μA

Key Features

  • Current capacity comparable to chassis-mounted rectifiers.
  • Very high surge capacity.
  • Insulated case.
  • Pb-free packages available.
  • Corrosion-resistant finish and readily solderable terminal leads.
  • High forward current ratings with low forward voltage drop.
  • Wide operating and storage junction temperature range (-65°C to +175°C).

Applications

The MR751G is suitable for various applications requiring high-current rectification, including:

  • Power supplies and DC power systems.
  • Industrial control systems.
  • Automotive systems.
  • Telecommunications equipment.
  • High-reliability rectification in harsh environments.

Q & A

  1. What is the peak repetitive reverse voltage of the MR751G?

    The peak repetitive reverse voltage (VRRM) of the MR751G is 100 volts.

  2. What is the maximum non-repetitive peak surge current for the MR751G?

    The maximum non-repetitive peak surge current (IFSM) for the MR751G is 400 amps for one cycle.

  3. What is the operating junction temperature range for the MR751G?

    The operating and storage junction temperature range for the MR751G is -65°C to +175°C.

  4. Is the MR751G Pb-free?
  5. What is the maximum instantaneous forward voltage drop for the MR751G at 100 A and 25°C?

    The maximum instantaneous forward voltage drop (vF) at 100 A and 25°C is 1.25 volts.

  6. What are the typical applications for the MR751G?

    The MR751G is typically used in power supplies, industrial control systems, automotive systems, telecommunications equipment, and other high-reliability rectification applications.

  7. How does the MR751G handle high surge currents?

    The MR751G is designed with very high surge capacity, making it capable of handling significant surge currents.

  8. What is the weight of the MR751G?

    The weight of the MR751G is approximately 2.5 grams.

  9. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C maximum for 10 seconds.

  10. Is the MR751G corrosion-resistant?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):6A
Voltage - Forward (Vf) (Max) @ If:900 mV @ 6 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:25 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:Button, Axial
Supplier Device Package:Microde Button
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
453

Please send RFQ , we will respond immediately.

Same Series
MR750
MR750
RECT 50 V 6 AMPS
MR752
MR752
RECT 200 V 6 AMPS
MR750G
MR750G
DIODE GP 50V 6A MICRODE BUTTON
MR751G
MR751G
DIODE GP 100V 6A MICRODE BUTTON
MR752G
MR752G
DIODE GP 200V 6A MICRODE BUTTON
94-3250
94-3250
MOSFET N-CH 30V 12A DIRECTFET
IRF6604TR1
IRF6604TR1
MOSFET N-CH 30V 12A DIRECTFET

Similar Products

Part Number MR751G MR754G MR756G MR752G MR851G MR750G MR751
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi Solid State Inc.
Product Status Obsolete Obsolete Obsolete Obsolete Active Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 400 V 600 V 200 V 100 V 50 V 100 V
Current - Average Rectified (Io) 6A 6A 6A 6A 3A 6A 6A
Voltage - Forward (Vf) (Max) @ If 900 mV @ 6 A 900 mV @ 6 A 900 mV @ 6 A 900 mV @ 6 A 1.25 V @ 3 A 900 mV @ 6 A 900 mV @ 6 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - 300 ns - -
Current - Reverse Leakage @ Vr 25 µA @ 100 V 25 µA @ 400 V 25 µA @ 600 V 25 µA @ 200 V 10 µA @ 100 V 25 µA @ 50 V 25 µA @ 100 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole -
Package / Case Button, Axial Button, Axial Button, Axial Button, Axial DO-201AA, DO-27, Axial Button, Axial -
Supplier Device Package Microde Button Microde Button Microde Button Microde Button Axial Microde Button -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 125°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL

Related Product By Brand

SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP