Overview
The MMBT6517LT1G is a high-voltage NPN silicon transistor produced by onsemi. This device is part of the MMBT6517L series and is designed for various applications requiring high voltage and current handling capabilities. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments. The transistor is lead-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 350 | V |
| Collector-Base Voltage | VCBO | 350 | V |
| Emitter-Base Voltage | VEBO | 5.0 | V |
| Base Current | IB | 25 | mA |
| Collector Current - Continuous | IC | 100 | mA |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RθJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 1.0 mA, VCE = 10 V) | hFE | 20 - 200 | - |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) | VCE(sat) | 0.30 - 1.0 | V |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) | VBE(sat) | 0.75 - 0.90 | V |
| Current Gain - Bandwidth Product (IC = 10 mA, VCE = 20 V, f = 20 MHz) | fT | 40 - 200 | MHz |
| Collector-Base Capacitance (VCB = 20 V, f = 1.0 MHz) | Ccb | 6.0 | pF |
| Emitter-Base Capacitance (VEB = 0.5 V, f = 1.0 MHz) | Ceb | 80 | pF |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- Pb-free, halogen-free, and RoHS compliant.
- High collector-emitter voltage (VCEO) of 350 V.
- High collector-base voltage (VCBO) of 350 V.
- Continuous collector current (IC) of up to 100 mA.
- Wide junction and storage temperature range (-55°C to +150°C).
- High DC current gain (hFE) with a range of 20 to 200.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- Compact SOT-23 (TO-236AB) package.
Applications
- Automotive systems requiring high reliability and durability.
- Industrial control and automation.
- Power management and switching circuits.
- Audio and signal amplification.
- General-purpose amplifiers and switches.
Q & A
- What is the maximum collector-emitter voltage of the MMBT6517LT1G?
The maximum collector-emitter voltage (VCEO) is 350 V.
- Is the MMBT6517LT1G suitable for automotive applications?
- What is the continuous collector current rating of the MMBT6517LT1G?
The continuous collector current (IC) is up to 100 mA.
- What is the thermal resistance, junction-to-ambient, for the FR-5 board?
The thermal resistance, junction-to-ambient (RθJA), is 556 °C/W for the FR-5 board.
- What is the DC current gain range of the MMBT6517LT1G?
The DC current gain (hFE) ranges from 20 to 200.
- What is the collector-emitter saturation voltage of the MMBT6517LT1G?
The collector-emitter saturation voltage (VCE(sat)) ranges from 0.30 to 1.0 V.
- What is the base-emitter saturation voltage of the MMBT6517LT1G?
The base-emitter saturation voltage (VBE(sat)) ranges from 0.75 to 0.90 V.
- What is the current gain-bandwidth product of the MMBT6517LT1G?
The current gain-bandwidth product (fT) ranges from 40 to 200 MHz.
- What is the package type of the MMBT6517LT1G?
The MMBT6517LT1G comes in a compact SOT-23 (TO-236AB) package.
- Is the MMBT6517LT1G RoHS compliant?
