Overview
The MMBT3904HLT1G is a general-purpose NPN silicon transistor manufactured by onsemi. This device is designed for medium power amplification and switching applications. It is housed in the SOT-23 package, which is suitable for low power surface mount applications. The transistor is lead-free, halogen-free, and fully RoHS compliant, making it an environmentally friendly option. It is also AEC-Q101 qualified and PPAP capable, which makes it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCBO | 60 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 200 | mAdc |
| Collector Current - Peak | ICM | - | mAdc |
| Base Cutoff Current | IBL | -50 | nA |
| Small-Signal Current Gain | hfe | 100 - 400 | - |
| Output Admittance | hoe | 1.0 - 40 | μmhos |
| Noise Figure | NF | -5.0 | dB |
| Delay Time | td | 35 | ns |
| Rise Time | tr | 35 | ns |
| Storage Time | ts | 200 | ns |
| Fall Time | tf | 50 | ns |
| Junction and Storage Temperature Range | TJ, Tstg | -65 to +150 | °C |
Key Features
- Lead-free, halogen-free, and fully RoHS compliant, ensuring environmental sustainability.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.
- Ideal for medium power amplification and switching applications.
- Housed in the SOT-23 package, suitable for low power surface mount applications.
- High small-signal current gain (hfe) ranging from 100 to 400.
- Low noise figure of -5.0 dB at specific operating conditions.
- Fast switching characteristics with delay, rise, storage, and fall times of 35 ns, 35 ns, 200 ns, and 50 ns respectively.
Applications
- General-purpose amplifier applications.
- Medium power amplification and switching circuits.
- Automotive electronics due to its AEC-Q101 qualification and PPAP capability.
- Consumer electronics requiring low power surface mount devices.
- Industrial control systems where reliability and environmental compliance are crucial).
Q & A
- What is the maximum collector-emitter voltage of the MMBT3904HLT1G transistor?
The maximum collector-emitter voltage (VCEO) is 40 Vdc).
- Is the MMBT3904HLT1G transistor RoHS compliant?
Yes, the MMBT3904HLT1G is lead-free, halogen-free, and fully RoHS compliant).
- What is the typical small-signal current gain (hfe) of the MMBT3904HLT1G?
The small-signal current gain (hfe) ranges from 100 to 400).
- What is the package type of the MMBT3904HLT1G transistor?
The transistor is housed in the SOT-23 package).
- What are the typical delay and rise times of the MMBT3904HLT1G transistor?
The delay and rise times are both 35 ns).
- Is the MMBT3904HLT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications).
- What is the maximum collector current of the MMBT3904HLT1G transistor?
The maximum continuous collector current (IC) is 200 mAdc).
- What is the noise figure of the MMBT3904HLT1G transistor at specific operating conditions?
The noise figure (NF) is -5.0 dB at VCE = 5.0 Vdc, IC = 100 μAdc, RS = 1.0 kΩ, and f = 1.0 kHz).
- What are the storage and fall times of the MMBT3904HLT1G transistor?
The storage time (ts) is 200 ns and the fall time (tf) is 50 ns).
- What is the junction and storage temperature range of the MMBT3904HLT1G transistor?
The junction and storage temperature range is -65 to +150°C).
