Overview
The MJD5731T4G is a high-voltage PNP silicon power transistor manufactured by onsemi. This transistor is designed to handle high voltage and current applications, making it suitable for various power management and control systems. It is packaged in a TO-252-2 (DPAK) case, which is lead-free and RoHS compliant, ensuring environmental sustainability and reliability.
Key Specifications
| Parameter | Value |
|---|---|
| Maximum DC Collector Current | 1 A |
| Collector-Emitter Voltage (VCEO) Max | 350 V |
| Collector-Base Voltage (VCBO) | - |
| Emitter-Base Voltage (VEBO) | 5 V |
| Package Type | TO-252-2 (DPAK) |
| Power Dissipation | 1.56 W |
Key Features
- High voltage capability with a maximum collector-emitter voltage of 350 V.
- High current handling with a maximum DC collector current of 1 A.
- Lead-free and RoHS compliant, ensuring environmental sustainability.
- TO-252-2 (DPAK) package for efficient heat dissipation and compact design.
- Suitable for high-power applications requiring reliable and efficient performance.
Applications
The MJD5731T4G transistor is versatile and can be used in a variety of high-power applications, including:
- Power supplies and switching regulators.
- Motor control and drive systems.
- Audio amplifiers and other high-power audio equipment.
- Industrial control systems and automation.
- Automotive systems requiring high reliability and performance.
Q & A
- What is the maximum collector-emitter voltage of the MJD5731T4G transistor?
The maximum collector-emitter voltage (VCEO) is 350 V. - What is the maximum DC collector current of the MJD5731T4G transistor?
The maximum DC collector current is 1 A. - What package type is the MJD5731T4G transistor available in?
The transistor is packaged in a TO-252-2 (DPAK) case. - Is the MJD5731T4G transistor RoHS compliant?
Yes, the MJD5731T4G transistor is lead-free and RoHS compliant. - What is the power dissipation of the MJD5731T4G transistor?
The power dissipation is 1.56 W. - What are some common applications of the MJD5731T4G transistor?
Common applications include power supplies, motor control systems, audio amplifiers, industrial control systems, and automotive systems. - Can the MJD5731T4G transistor be used in high-power audio equipment?
Yes, it is suitable for high-power audio equipment due to its high voltage and current handling capabilities. - Is the MJD5731T4G transistor suitable for automotive applications?
Yes, it is suitable for automotive systems requiring high reliability and performance. - What is the emitter-base voltage (VEBO) of the MJD5731T4G transistor?
The emitter-base voltage (VEBO) is 5 V. - Where can I find detailed specifications for the MJD5731T4G transistor?
Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and LCSC.
