MJD44H11TM-ON
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onsemi MJD44H11TM-ON

Manufacturer No:
MJD44H11TM-ON
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 80V 8A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD44H11TM is a high-performance NPN power bipolar junction transistor manufactured by ON Semiconductor. This device is designed for demanding applications in harsh environments, featuring a maximum voltage rating of 80 V and a maximum current rating of 8 A. It is available in a TO-252-3 package, which is suitable for surface-mount technology, offering a compact and efficient solution for electronic circuits.

The transistor is Pb-Free and RoHS compliant, ensuring adherence to environmental regulations and reducing the risk of lead contamination. Its compact design and high-performance capabilities make it an ideal choice for various industrial, automotive, and consumer electronics applications.

Key Specifications

Parameter Value
Transistor Type NPN
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Collector Emitter Voltage V(br)ceo 80 V
Collector Emitter Voltage Vces 1 V
Continuous Collector Current Ic Max 8 A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A, 1V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Power Dissipation Max 1.75 W
Operating Temperature 150°C (TJ)
Frequency - Transition 50 MHz

Key Features

  • Pb-Free and RoHS Compliant: Ensures compliance with environmental regulations and reduces the risk of lead contamination.
  • High Performance: Designed for high-performance applications with a maximum voltage rating of 80 V and a maximum current rating of 8 A.
  • Compact Design: Available in a TO-252-3 package, suitable for surface-mount technology, offering a compact and efficient solution for electronic circuits.
  • Low Collector Emitter Saturation Voltage: Features a low Vce saturation voltage, enhancing efficiency in switching and power applications.
  • Fast Switching Speeds: Offers fast switching speeds with a transition frequency of 50 MHz, making it suitable for high-frequency applications.

Applications

The MJD44H11TM is suitable for a wide range of applications where high-performance, reliability, and compact design are essential. Some of the key application areas include:

  • Industrial Control Systems: Ideal for use in industrial control systems where high power and reliability are critical.
  • Automotive Electronics: Suitable for automotive applications requiring high-performance and compact design.
  • Power Supplies: Used in power supply circuits where high current handling and low saturation voltage are necessary.
  • Motor Control Circuits: Applicable in motor control circuits that demand high current and fast switching speeds.

Q & A

  1. Q: What is the maximum current rating of the MJD44H11TM?
    A: The maximum current rating of the MJD44H11TM is 8 A.
  2. Q: Is the MJD44H11TM Pb-Free and RoHS compliant?
    A: Yes, the MJD44H11TM is Pb-Free and RoHS compliant.
  3. Q: Can the MJD44H11TM be used in automotive applications?
    A: Yes, it is suitable for use in automotive electronics where high-performance, reliability, and compact design are essential.
  4. Q: What is the collector-emitter voltage breakdown (V(br)ceo) of the MJD44H11TM?
    A: The collector-emitter voltage breakdown (V(br)ceo) is 80 V.
  5. Q: What is the transition frequency (ft) of the MJD44H11TM?
    A: The transition frequency (ft) is 50 MHz.
  6. Q: What is the power dissipation maximum of the MJD44H11TM?
    A: The power dissipation maximum is 1.75 W.
  7. Q: What is the operating temperature range of the MJD44H11TM?
    A: The operating temperature range is up to 150°C (TJ).
  8. Q: What package types are available for the MJD44H11TM?
    A: The MJD44H11TM is available in TO-252-3, DPAK (2 Leads + Tab), and SC-63 packages.
  9. Q: What is the DC current gain (hFE) minimum of the MJD44H11TM?
    A: The DC current gain (hFE) minimum is 60 @ 2A, 1V.
  10. Q: Is the MJD44H11TM suitable for high-frequency applications?
    A: Yes, it is suitable for high-frequency applications due to its fast switching speeds and transition frequency of 50 MHz.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 2A, 1V
Power - Max:1.75 W
Frequency - Transition:50MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252-3 (DPAK)
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