Overview
The MBRB2535CTLT4G is a high-performance Schottky Barrier rectifier produced by onsemi. This device is designed in the D2PAK surface mount power package, making it ideal for applications requiring low voltage and high frequency switching. The MBRB2535CTLT4G features state-of-the-art geometry with epitaxial construction, oxide passivation, and metal overlay contact, ensuring high reliability and efficiency.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 35 | V |
| Average Rectified Forward Current (TC = 110°C) | IF(AV) | 12.5 | A |
| Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 90°C) | IFRM | 25 | A |
| Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) | IFSM | 150 | A |
| Operating Junction Temperature | TJ | -65 to +125 | °C |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Maximum Instantaneous Forward Voltage (iF = 25 A, TJ = 25°C) | vF | 0.55 | V |
| Thermal Resistance Junction-to-Case | RθJC | 1.0 | °C/W |
| Thermal Resistance Junction-to-Ambient | RθJA | 84 | °C/W |
Key Features
- Center-Tap Configuration
- Guardring for Stress Protection
- Low Forward Voltage
- 125°C Operating Junction Temperature
- Epoxy Meets UL 94, V-0 @ 0.125 in
- Short Heatsink Tab Manufactured – Not Sheared
- Similar in Size to the Industry Standard TO-220 Package
- AEC-Q101 Qualified and PPAP Capable
- Pb-Free Package
- ESD Ratings: Machine Model = C (> 400 V), Human Body Model = 3B (> 8000 V)
Applications
The MBRB2535CTLT4G is ideally suited for use in various applications, including:
- Low voltage, high frequency switching power supplies
- Free wheeling diodes
- Polarity protection diodes
- Automotive and other applications requiring unique site and control change requirements (NRVBB prefix)
Q & A
- What is the peak repetitive reverse voltage of the MBRB2535CTLT4G?
The peak repetitive reverse voltage (VRRM) is 35 V.
- What is the average rectified forward current of the MBRB2535CTLT4G at 110°C case temperature?
The average rectified forward current (IF(AV)) is 12.5 A at a case temperature of 110°C.
- What is the maximum operating junction temperature of the MBRB2535CTLT4G?
The maximum operating junction temperature (TJ) is 125°C.
- Is the MBRB2535CTLT4G Pb-free?
- What are the ESD ratings for the MBRB2535CTLT4G?
The ESD ratings are Machine Model = C (> 400 V) and Human Body Model = 3B (> 8000 V).
- What is the thermal resistance junction-to-case for the MBRB2535CTLT4G?
The thermal resistance junction-to-case (RθJC) is 1.0 °C/W.
- What are some common applications for the MBRB2535CTLT4G?
Common applications include low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.
- Is the MBRB2535CTLT4G AEC-Q101 qualified?
- What is the maximum instantaneous forward voltage for the MBRB2535CTLT4G at 25 A and 25°C?
The maximum instantaneous forward voltage (vF) at 25 A and 25°C is 0.55 V.
- What is the storage temperature range for the MBRB2535CTLT4G?
The storage temperature range (Tstg) is -65 to +150 °C.
