MBRB1545CTT4G
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onsemi MBRB1545CTT4G

Manufacturer No:
MBRB1545CTT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY SCHOTTKY 45V D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRB1545CTT4G is a high-performance switch-mode power rectifier produced by onsemi. This device is designed in the D2PAK surface mount power package and utilizes the Schottky Barrier principle with a platinum barrier metal. It is characterized by its center-tap configuration, guardring for stress protection, and low forward voltage, making it suitable for a variety of high-power applications.

The MBRB1545CTT4G is part of onsemi's lineup of Schottky barrier rectifiers, known for their efficiency and reliability in power conversion systems. The device is Pb-free and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

Symbol Characteristic Value Unit
VRRM Peak Repetitive Reverse Voltage 45 V
IF(AV) Average Rectified Forward Current (Rated VR, TC = 167°C) Total Device 7.5 / 15 A
IFRM Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 166°C) 15 A
IFSM Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 150 A
IRRM Peak Repetitive Reverse Surge Current (2.0 μs, 1.0 kHz) 1.0 A
Tstg Storage Temperature Range −65 to +175 °C
TJ Operating Junction Temperature −65 to +175 °C
dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs
RθJC Thermal Resistance Junction to Case 2.0 °C/W
RθJA Thermal Resistance Junction to Ambient 50 °C/W
VF Maximum Instantaneous Forward Voltage 0.57 / 0.72 / 0.84 V
iR Maximum Instantaneous Reverse Current 15 / 0.1 mA

Key Features

  • Center-Tap Configuration: Allows for versatile use in various circuit designs.
  • Guardring for Stress Protection: Enhances the device's durability and reliability under stress conditions.
  • Low Forward Voltage: Minimizes power losses and improves efficiency in power conversion applications.
  • 175°C Operating Junction Temperature: Enables operation in high-temperature environments.
  • Epoxy Meets UL 94, V-0 @ 0.125 in: Ensures the device meets stringent safety standards for flammability.
  • Short Heatsink Tab Manufactured − Not Sheared: Improves thermal performance and reliability.
  • Similar in Size to the Industry Standard TO220 Package: Facilitates easy integration into existing designs.
  • SBRB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other demanding applications.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

The MBRB1545CTT4G is designed for use in a variety of high-power applications, including:

  • Switch-Mode Power Supplies: Ideal for high-efficiency power conversion systems.
  • Automotive Systems: AEC-Q101 qualified, making it suitable for automotive applications requiring high reliability.
  • Industrial Power Systems: Used in high-power industrial equipment where efficiency and reliability are critical.
  • Renewable Energy Systems: Suitable for use in solar and wind power systems due to its high efficiency and durability.

Q & A

  1. What is the maximum repetitive reverse voltage of the MBRB1545CTT4G?

    The maximum repetitive reverse voltage (VRRM) is 45 volts.

  2. What is the average rectified forward current rating of the MBRB1545CTT4G?

    The average rectified forward current (IF(AV)) is rated at 7.5 A and 15 A (total device) at TC = 167°C.

  3. What is the operating junction temperature range of the MBRB1545CTT4G?

    The operating junction temperature (TJ) range is from −65°C to +175°C.

  4. Is the MBRB1545CTT4G Pb-free and RoHS compliant?

    Yes, the device is Pb-free and RoHS compliant.

  5. What is the thermal resistance from junction to ambient for the MBRB1545CTT4G?

    The thermal resistance from junction to ambient (RθJA) is 50°C/W.

  6. What are the ESD ratings for the MBRB1545CTT4G?

    The ESD ratings are Machine Model = C (> 400 V) and Human Body Model = 3B (> 8000 V).

  7. What is the maximum instantaneous forward voltage of the MBRB1545CTT4G?

    The maximum instantaneous forward voltage (VF) is 0.57 V at IF = 7.5 A, TJ = 125°C; 0.72 V at IF = 15 A, TJ = 125°C; and 0.84 V at IF = 15 A, TJ = 25°C.

  8. What is the storage temperature range for the MBRB1545CTT4G?

    The storage temperature range (Tstg) is from −65°C to +175°C.

  9. Is the MBRB1545CTT4G suitable for automotive applications?

    Yes, the SBRB prefix version is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  10. What is the voltage rate of change (dv/dt) for the MBRB1545CTT4G?

    The voltage rate of change (dv/dt) is 10,000 V/μs.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):45 V
Current - Average Rectified (Io) (per Diode):7.5A
Voltage - Forward (Vf) (Max) @ If:570 mV @ 7.5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 45 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
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