MBR3100G
  • Share:

onsemi MBR3100G

Manufacturer No:
MBR3100G
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY 100V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR3100G is a Schottky Barrier Rectifier produced by onsemi, designed for high-efficiency and low-power loss applications. This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode, featuring epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection diodes.

Key Specifications

Characteristic Symbol Max Unit
Peak Repetitive Reverse Voltage VRRM 100 V
Average Rectified Forward Current (TA = 100°C) IO 3.0 A
Non-Repetitive Peak Surge Current IFSM 150 A
Operating and Storage Junction Temperature Range TJ, Tstg -65°C to +175°C
Maximum Instantaneous Forward Voltage (iF = 3.0 A, TL = 25°C) vF 0.79 V
Maximum Instantaneous Reverse Current @ Rated DC Voltage (TL = 25°C) iR 0.6 mA
Thermal Resistance, Junction-to-Ambient RθJA 28 °C/W

Key Features

  • Low Reverse Current
  • Low Stored Charge, Majority Carrier Conduction
  • Low Power Loss/High Efficiency
  • Highly Stable Oxide Passivated Junction
  • Guard-ring for Stress Protection
  • Low Forward Voltage
  • 175°C Operating Junction Temperature
  • High Surge Capacity
  • Pb-Free Packages Available

Applications

The MBR3100G is ideally suited for various applications including:

  • Rectifiers in low-voltage, high-frequency inverters
  • Free-wheeling diodes
  • Polarity protection diodes

Q & A

  1. What is the peak repetitive reverse voltage of the MBR3100G?

    The peak repetitive reverse voltage (VRRM) of the MBR3100G is 100 V.

  2. What is the average rectified forward current of the MBR3100G at 100°C?

    The average rectified forward current (IO) at 100°C is 3.0 A.

  3. What is the maximum instantaneous forward voltage of the MBR3100G at 25°C?

    The maximum instantaneous forward voltage (vF) at 25°C and 3.0 A is 0.79 V.

  4. What is the operating junction temperature range of the MBR3100G?

    The operating and storage junction temperature range is -65°C to +175°C.

  5. Is the MBR3100G available in Pb-Free packages?
  6. What is the thermal resistance, junction-to-ambient, of the MBR3100G?

    The thermal resistance, junction-to-ambient (RθJA), is 28 °C/W.

  7. What are some typical applications of the MBR3100G?

    The MBR3100G is typically used in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection diodes.

  8. What is the maximum non-repetitive peak surge current of the MBR3100G?

    The maximum non-repetitive peak surge current (IFSM) is 150 A.

  9. What is the maximum instantaneous reverse current at rated DC voltage at 25°C?

    The maximum instantaneous reverse current (iR) at rated DC voltage at 25°C is 0.6 mA.

  10. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C max for 10 seconds.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:790 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:600 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AA, DO-27, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.23
1,909

Please send RFQ , we will respond immediately.

Same Series
MBR3100RL
MBR3100RL
DIODE SCHOTTKY 100V 3A DO201AD
MBR3100
MBR3100
DIODE SCHOTTKY 100V 3A DO201AD
MBR3100G
MBR3100G
DIODE SCHOTTKY 100V 3A DO201AD

Similar Products

Part Number MBR3100G MBR3100
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 3A 3A
Voltage - Forward (Vf) (Max) @ If 790 mV @ 3 A 790 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 600 µA @ 100 V 600 µA @ 100 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial
Supplier Device Package Axial Axial
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP