MBR2535CTLG
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onsemi MBR2535CTLG

Manufacturer No:
MBR2535CTLG
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE ARRAY SCHOTTKY 35V TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The MBR2535CTLG is a switch-mode power rectifier Schottky diode produced by onsemi. This component is designed for high-efficiency rectification in various power applications, leveraging the advantages of Schottky technology such as low forward voltage drop and fast switching times. The MBR2535CTLG is packaged in a TO-220AB case, making it suitable for a range of power management and conversion systems.

Key Specifications

ParameterValueUnit
Voltage Rating (VRRM)35V
Average Rectified Current (IO)12.5A
Peak Repetitive Reverse Surge Current (IRRM)1.0A
Storage Temperature Range (Tstg)-65 to +150°C
Voltage Rate of Change (dv/dt)10,000V/μs
Controlled Avalanche Energy (Waval)20mJ

Key Features

  • Low forward voltage drop, enhancing efficiency in power rectification.
  • Fast switching times, suitable for high-frequency applications.
  • High surge current capability, ensuring robust performance under transient conditions.
  • Controlled avalanche energy, providing protection against voltage spikes.
  • Wide storage temperature range, making it versatile for various environmental conditions.

Applications

The MBR2535CTLG is ideal for use in switch-mode power supplies, DC-DC converters, and other high-efficiency power management systems. It is also suitable for applications in telecommunications, industrial power supplies, and automotive systems where high reliability and efficiency are critical.

Q & A

  1. What is the voltage rating of the MBR2535CTLG?
    The voltage rating (VRRM) of the MBR2535CTLG is 35V.
  2. What is the average rectified current of the MBR2535CTLG?
    The average rectified current (IO) of the MBR2535CTLG is 12.5A.
  3. What is the storage temperature range of the MBR2535CTLG?
    The storage temperature range (Tstg) of the MBR2535CTLG is -65°C to +150°C.
  4. What is the voltage rate of change (dv/dt) of the MBR2535CTLG?
    The voltage rate of change (dv/dt) of the MBR2535CTLG is 10,000 V/μs.
  5. What is the controlled avalanche energy of the MBR2535CTLG?
    The controlled avalanche energy (Waval) of the MBR2535CTLG is 20 mJ.
  6. In what package is the MBR2535CTLG available?
    The MBR2535CTLG is available in a TO-220AB package.
  7. What are some typical applications of the MBR2535CTLG?
    The MBR2535CTLG is typically used in switch-mode power supplies, DC-DC converters, telecommunications, industrial power supplies, and automotive systems.
  8. What are the benefits of using a Schottky diode like the MBR2535CTLG?
    Schottky diodes like the MBR2535CTLG offer low forward voltage drop and fast switching times, enhancing efficiency and performance in power rectification applications.
  9. How does the MBR2535CTLG handle surge currents?
    The MBR2535CTLG has a peak repetitive reverse surge current (IRRM) of 1.0 A, ensuring it can handle transient conditions effectively.
  10. Where can I find detailed specifications for the MBR2535CTLG?
    Detailed specifications for the MBR2535CTLG can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):35 V
Current - Average Rectified (Io) (per Diode):12.5A
Voltage - Forward (Vf) (Max) @ If:470 mV @ 12.5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 mA @ 35 V
Operating Temperature - Junction:-65°C ~ 150°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number MBR2535CTLG MBR2535CTG MBR2535CTL
Manufacturer onsemi onsemi SMC Diode Solutions
Product Status Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 35 V 35 V 35 V
Current - Average Rectified (Io) (per Diode) 12.5A 30A -
Voltage - Forward (Vf) (Max) @ If 470 mV @ 12.5 A 820 mV @ 30 A 470 mV @ 12.5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 5 mA @ 35 V 200 µA @ 35 V 1 mA @ 35 V
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 175°C -55°C ~ 150°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220AB

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