MBR20H100CTG
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onsemi MBR20H100CTG

Manufacturer No:
MBR20H100CTG
Manufacturer:
onsemi
Package:
Tube
Description:
DIODE ARRAY SCHOTTKY 100V TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR20H100CTG is a high-performance switch-mode power rectifier produced by onsemi. This component is designed to offer low power loss and high efficiency, making it suitable for various power management and rectification applications. The device features a low forward voltage drop and high surge capacity, ensuring reliable operation under demanding conditions. It is available in several package types, including TO-220 and D2PAK, and is Pb-free and RoHS compliant.

Key Specifications

Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 100 V
Average Rectified Forward Current (Total Device) IF(AV) 20 A
Average Rectified Forward Current (Per Diode Leg) IF(AV) 10 A
Peak Repetitive Forward Current IFRM 20 A
Nonrepetitive Peak Surge Current IFSM 250 A
Operating Junction Temperature TJ -65 to +175 °C
Storage Temperature Tstg -65 to +175 °C
Maximum Instantaneous Forward Voltage (IF = 10 A, TC = 125°C) vF 0.64 V
Maximum Instantaneous Reverse Current (Rated DC Voltage, TC = 125°C) iR 6.0 mA
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/μs
Thermal Resistance (Junction-to-Case) RθJC 2.0 °C/W
Thermal Resistance (Junction-to-Ambient) RθJA 60 °C/W

Key Features

  • Low Forward Voltage: 0.64 V at 125°C, ensuring low power loss and high efficiency.
  • High Surge Capacity: Nonrepetitive peak surge current of 250 A.
  • High Operating Junction Temperature: Up to 175°C, suitable for demanding applications.
  • Guard-Ring for Stress Protection: Enhances overvoltage protection and reliability.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.

Applications

  • Power Supply - Output Rectification: Ideal for rectification in power supply units due to its high efficiency and low forward voltage.
  • Power Management: Used in various power management circuits to ensure reliable and efficient operation.
  • Instrumentation: Suitable for use in instrumentation applications where high reliability and low power loss are critical.
  • Automotive and Industrial Applications: Qualified for automotive use and other applications requiring stringent quality and reliability standards.

Q & A

  1. What is the peak repetitive reverse voltage of the MBR20H100CTG?

    The peak repetitive reverse voltage is 100 V.

  2. What is the average rectified forward current rating for the total device?

    The average rectified forward current rating for the total device is 20 A.

  3. What is the maximum operating junction temperature of the MBR20H100CTG?

    The maximum operating junction temperature is 175°C.

  4. Is the MBR20H100CTG Pb-free and RoHS compliant?
  5. What is the nonrepetitive peak surge current rating of the MBR20H100CTG?

    The nonrepetitive peak surge current rating is 250 A.

  6. What is the typical thermal resistance from junction to case for the MBR20H100CTG?

    The typical thermal resistance from junction to case is 2.0°C/W.

  7. What are the storage temperature limits for the MBR20H100CTG?

    The storage temperature range is from -65°C to +175°C.

  8. Is the MBR20H100CTG suitable for automotive applications?
  9. What is the maximum instantaneous forward voltage at 10 A and 125°C?

    The maximum instantaneous forward voltage at 10 A and 125°C is 0.64 V.

  10. What is the voltage rate of change (dv/dt) for the MBR20H100CTG?

    The voltage rate of change (dv/dt) is 10,000 V/μs.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:770 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:4.5 µA @ 100 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number MBR20H100CTG MBR20H150CTG MBR20H100CTH MBR20H100CT
Manufacturer onsemi onsemi onsemi Taiwan Semiconductor Corporation
Product Status Obsolete Active Obsolete Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 150 V 100 V 100 V
Current - Average Rectified (Io) (per Diode) 10A 10A 10A 20A
Voltage - Forward (Vf) (Max) @ If 770 mV @ 10 A 680 mV @ 10 A 770 mV @ 10 A 950 mV @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 4.5 µA @ 100 V 50 µA @ 150 V 4.5 µA @ 100 V 5 µA @ 100 V
Operating Temperature - Junction -65°C ~ 175°C -20°C ~ 150°C 175°C (Max) -55°C ~ 175°C
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220AB

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