KSP44TA
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onsemi KSP44TA

Manufacturer No:
KSP44TA
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS NPN 400V 0.3A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The KSP44TA is a Bipolar Junction Transistor (BJT) produced by onsemi, designed for a variety of general-purpose amplifier applications. This NPN transistor is housed in the TO-92-3 package, making it suitable for through-hole mounting. It is known for its reliability and performance in low to medium power applications.

Key Specifications

ParameterValue
TypeNPN Bipolar Junction Transistor (BJT)
Collector-Base Voltage (VCB)400 V
Collector-Emitter Voltage (VCE)400 V
Emitter-Base Voltage (VEB)5 V
Collector Current (IC)300 mA
Power Dissipation (PD)625 mW
PackageTO-92-3

Key Features

  • NPN bipolar junction transistor with high collector-base voltage rating of 400 V.
  • Collector current of 300 mA, suitable for medium power applications.
  • Low power dissipation of 625 mW.
  • Housed in the TO-92-3 package, facilitating through-hole mounting.
  • Compliant with RoHS standards, ensuring environmental sustainability.

Applications

The KSP44TA is versatile and can be used in a variety of applications, including:

  • General-purpose amplifier circuits.
  • Switching and driver circuits.
  • Audio amplifiers and other low to medium power electronic devices.
  • Automotive and industrial control systems.

Q & A

  1. What is the collector-base voltage rating of the KSP44TA? The collector-base voltage rating is 400 V.
  2. What is the maximum collector current of the KSP44TA? The maximum collector current is 300 mA.
  3. What is the power dissipation of the KSP44TA? The power dissipation is 625 mW.
  4. In what package is the KSP44TA housed? The KSP44TA is housed in the TO-92-3 package.
  5. Is the KSP44TA RoHS compliant? Yes, the KSP44TA is RoHS compliant.
  6. What are some common applications of the KSP44TA? Common applications include general-purpose amplifier circuits, switching and driver circuits, audio amplifiers, and automotive and industrial control systems.
  7. What type of transistor is the KSP44TA? The KSP44TA is an NPN bipolar junction transistor.
  8. What is the emitter-base voltage rating of the KSP44TA? The emitter-base voltage rating is 5 V.
  9. Can the KSP44TA be used in high-power applications? No, the KSP44TA is more suited for low to medium power applications.
  10. Where can I find detailed specifications for the KSP44TA? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):300 mA
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:750mV @ 5mA, 50mA
Current - Collector Cutoff (Max):500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 10V
Power - Max:625 mW
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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In Stock

$0.37
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Similar Products

Part Number KSP44TA KSP94TA KSP44TF KSP45TA KSP64TA KSP14TA KSP24TA KSP42TA KSP43TA
Manufacturer onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi
Product Status Active Active Active Active Obsolete Obsolete Obsolete Active Active
Transistor Type NPN PNP NPN NPN PNP - Darlington NPN - Darlington NPN NPN NPN
Current - Collector (Ic) (Max) 300 mA 300 mA 300 mA 300 mA 500 mA 500 mA 100 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V 400 V 350 V 30 V 30 V 30 V 300 V 200 V
Vce Saturation (Max) @ Ib, Ic 750mV @ 5mA, 50mA 750mV @ 5mA, 50mA 750mV @ 5mA, 50mA 750mV @ 5mA, 50mA 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA - 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 500nA 1µA 500nA 500nA 100nA (ICBO) 100nA (ICBO) 50nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 10V 50 @ 10mA, 10V 50 @ 10mA, 10V 50 @ 10mA, 10V 20000 @ 100mA, 5V 20000 @ 100mA, 5V 30 @ 8mA, 10V 40 @ 30mA, 10V 40 @ 30mA, 10V
Power - Max 625 mW 625 mW 625 mW 625 mW 625 mW 625 mW 350 mW 625 mW 625 mW
Frequency - Transition - - - - 125MHz 125MHz 620MHz 50MHz 50MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 135°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3

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