FFSH50120A
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onsemi FFSH50120A

Manufacturer No:
FFSH50120A
Manufacturer:
onsemi
Package:
Tube
Description:
1200V 50A SIC SBD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSH50120A is a Silicon Carbide (SiC) Schottky Diode produced by onsemi, utilizing a cutting-edge technology that offers superior switching performance and higher reliability compared to traditional silicon diodes. This diode is part of the EliteSiC family and is designed to provide no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. These features make SiC diodes the next generation of power semiconductors, offering benefits such as highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Key Specifications

ParameterValueUnit
VRRM (Peak Repetitive Reverse Voltage)1200V
IF (Continuous Rectified Forward Current @ TC < 155°C)50A
IF (Continuous Rectified Forward Current @ TC < 135°C)77A
IF, Max (Non-Repetitive Peak Forward Surge Current @ TC = 25°C, 10 μs)1700A
IF,SM (Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms)280A
Ptot (Power Dissipation @ TC = 25°C)736W
TJ (Operating and Storage Temperature Range)−55 to +175°C
VF (Forward Voltage @ IF = 50 A, TC = 25°C)1.45 - 1.75V
RθJC (Thermal Resistance, Junction to Case, Max)0.17°C/W

Key Features

  • Max Junction Temperature: 175°C
  • Avalanche Rated: 441 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery
  • Ease of Paralleling
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant

Applications

  • General Purpose
  • SMPS (Switch-Mode Power Supplies)
  • Solar Inverters
  • UPS (Uninterruptible Power Supplies)
  • Power Switching Circuits
  • Industrial End Products such as EV Chargers and Energy Storage Systems (ESS).

Q & A

  1. What is the peak repetitive reverse voltage of the FFSH50120A?
    The peak repetitive reverse voltage is 1200 V.
  2. What is the maximum continuous rectified forward current at a case temperature below 155°C?
    The maximum continuous rectified forward current is 50 A.
  3. What is the non-repetitive peak forward surge current at 25°C for 10 μs?
    The non-repetitive peak forward surge current is 1700 A.
  4. What is the thermal resistance from junction to case?
    The thermal resistance from junction to case is 0.17 °C/W.
  5. Is the FFSH50120A RoHS compliant?
    Yes, the FFSH50120A is Pb-Free, Halogen Free/BFR Free and RoHS Compliant.
  6. What are the typical applications of the FFSH50120A?
    Typical applications include SMPS, Solar Inverters, UPS, and Power Switching Circuits.
  7. What is the maximum junction temperature of the FFSH50120A?
    The maximum junction temperature is 175°C.
  8. Does the FFSH50120A have reverse recovery current?
    No, the FFSH50120A does not have reverse recovery current.
  9. What is the package type of the FFSH50120A?
    The package type is TO-247-2L.
  10. What are the benefits of using SiC technology in the FFSH50120A?
    The benefits include higher efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):77A (DC)
Voltage - Forward (Vf) (Max) @ If:- 
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 1200 V
Capacitance @ Vr, F:2560pF @ 1V, 100kHz
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247-2
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number FFSH50120A FFSH10120A FFSH20120A FFSH30120A FFSH40120A
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 77A (DC) 17A (DC) 30A (DC) 46A (DC) 61A (DC)
Voltage - Forward (Vf) (Max) @ If - 1.75 V @ 10 A 1.75 V @ 20 A - -
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V
Capacitance @ Vr, F 2560pF @ 1V, 100kHz 612pF @ 1V, 100kHz 1220pF @ 1V, 100KHz 1740pF @ 1V, 100kHz 2250pF @ 1V, 100kHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-2 TO-247-2 TO-247-2 TO-247-2 TO-247-2
Supplier Device Package TO-247-2 TO-247-2 TO-247-2 TO-247-2 TO-247-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C - -55°C ~ 175°C -55°C ~ 175°C

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