Overview
The FFSH50120A is a Silicon Carbide (SiC) Schottky Diode produced by onsemi, utilizing a cutting-edge technology that offers superior switching performance and higher reliability compared to traditional silicon diodes. This diode is part of the EliteSiC family and is designed to provide no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. These features make SiC diodes the next generation of power semiconductors, offering benefits such as highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Key Specifications
Parameter | Value | Unit |
---|---|---|
VRRM (Peak Repetitive Reverse Voltage) | 1200 | V |
IF (Continuous Rectified Forward Current @ TC < 155°C) | 50 | A |
IF (Continuous Rectified Forward Current @ TC < 135°C) | 77 | A |
IF, Max (Non-Repetitive Peak Forward Surge Current @ TC = 25°C, 10 μs) | 1700 | A |
IF,SM (Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms) | 280 | A |
Ptot (Power Dissipation @ TC = 25°C) | 736 | W |
TJ (Operating and Storage Temperature Range) | −55 to +175 | °C |
VF (Forward Voltage @ IF = 50 A, TC = 25°C) | 1.45 - 1.75 | V |
RθJC (Thermal Resistance, Junction to Case, Max) | 0.17 | °C/W |
Key Features
- Max Junction Temperature: 175°C
- Avalanche Rated: 441 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- No Reverse Recovery / No Forward Recovery
- Ease of Paralleling
- Pb-Free, Halogen Free/BFR Free and RoHS Compliant
Applications
- General Purpose
- SMPS (Switch-Mode Power Supplies)
- Solar Inverters
- UPS (Uninterruptible Power Supplies)
- Power Switching Circuits
- Industrial End Products such as EV Chargers and Energy Storage Systems (ESS).
Q & A
- What is the peak repetitive reverse voltage of the FFSH50120A?
The peak repetitive reverse voltage is 1200 V. - What is the maximum continuous rectified forward current at a case temperature below 155°C?
The maximum continuous rectified forward current is 50 A. - What is the non-repetitive peak forward surge current at 25°C for 10 μs?
The non-repetitive peak forward surge current is 1700 A. - What is the thermal resistance from junction to case?
The thermal resistance from junction to case is 0.17 °C/W. - Is the FFSH50120A RoHS compliant?
Yes, the FFSH50120A is Pb-Free, Halogen Free/BFR Free and RoHS Compliant. - What are the typical applications of the FFSH50120A?
Typical applications include SMPS, Solar Inverters, UPS, and Power Switching Circuits. - What is the maximum junction temperature of the FFSH50120A?
The maximum junction temperature is 175°C. - Does the FFSH50120A have reverse recovery current?
No, the FFSH50120A does not have reverse recovery current. - What is the package type of the FFSH50120A?
The package type is TO-247-2L. - What are the benefits of using SiC technology in the FFSH50120A?
The benefits include higher efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.