Overview
The ESD8472MUT5G, produced by onsemi, is an ultra-low capacitance ESD protection diode designed to safeguard voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events. This diode is notable for its excellent clamping capability, low capacitance, high breakdown voltage, high linearity, low leakage, and fast response time. These characteristics make it ideal for applications where board space is limited and high performance is required, particularly in RF and high-frequency designs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Peak Pulse Current (Ipp) | 3 | A |
| Peak Pulse Power Dissipation (Pppm) | 12.2 | W |
| Diode Capacitance (Cd) | 0.3 | pF |
| Voltage ESD Contact (Vesd) | 15 | kV |
| Breakdown Voltage (V(BR) Min) | 14 | V |
| Reverse Working Voltage (V RWM Max) | 7 | V |
| Reverse Leakage Current (I R Max) | 1 | µA |
| Package Type | X3-DFN-2 (0.3x0.6 mm) | |
| Insertion Loss | 0.030 | dBm |
Key Features
The ESD8472MUT5G features several key attributes that make it highly suitable for various applications:
- Ultra-Low Capacitance: With a capacitance of 0.3 pF, it minimizes the impact on high-frequency signals.
- High Linearity: Industry-leading capacitance linearity over voltage, making it ideal for RF applications.
- Small Footprint: The X3-DFN-2 package measures 0.62 mm x 0.32 mm, saving valuable board space.
- Low Insertion Loss: At 0.030 dBm, it ensures minimal signal degradation.
- Fast Response Time: Quickly responds to transient voltage events, providing effective protection.
Applications
The ESD8472MUT5G is versatile and can be applied in various scenarios, including:
- RF Signal ESD Protection: Protects RF signals in wireless handsets and terminals.
- RF Switching, PA, and Antenna ESD Protection: Suitable for protecting components in RF switching, power amplifier, and antenna applications.
- Near Field Communications (NFC): Used in NFC applications due to its low capacitance and high linearity.
- USB 2.0 and USB 3.0: Protects USB interfaces from ESD events.
- Smartphones, Tablets, and Notebooks: Ideal for protecting sensitive components in portable electronic devices.
Q & A
- What is the primary function of the ESD8472MUT5G?
The primary function of the ESD8472MUT5G is to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events.
- What is the capacitance of the ESD8472MUT5G?
The capacitance of the ESD8472MUT5G is 0.3 pF.
- What is the peak pulse current rating of the ESD8472MUT5G?
The peak pulse current rating is 3 A.
- What is the package type and size of the ESD8472MUT5G?
The package type is X3-DFN-2, measuring 0.62 mm x 0.32 mm.
- What are some common applications of the ESD8472MUT5G?
Common applications include RF signal protection, RF switching, PA, and antenna protection, NFC, USB interfaces, and protection in smartphones, tablets, and notebooks).
- What is the insertion loss of the ESD8472MUT5G?
The insertion loss is 0.030 dBm).
- What is the breakdown voltage of the ESD8472MUT5G?
The breakdown voltage (V(BR) Min) is 14 V).
- Is the ESD8472MUT5G RoHS compliant?
Yes, the ESD8472MUT5G is RoHS compliant).
- What is the reverse working voltage (V RWM Max) of the ESD8472MUT5G?
The reverse working voltage (V RWM Max) is 7 V).
- What is the reverse leakage current (I R Max) of the ESD8472MUT5G?
The reverse leakage current (I R Max) is 1 µA).
