Overview
The ESD7241N2T5G is an ultra-low capacitance ESD protection diode designed by onsemi to safeguard voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events. This device is particularly suited for applications requiring high capacitance linearity over voltage, making it ideal for RF and high-speed data line protection.
The ESD7241N2T5G features a micro-packaged design, which ensures minimal insertion loss and low leakage current, enhancing its performance in sensitive electronic circuits. It is also compliant with various IEC standards for ESD, electrical fast transient (EFT), and lightning protection.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Capacitance | < 1.0 | pF |
| Insertion Loss at 1 GHz | 0.15 | dB |
| Insertion Loss at 3 GHz | 0.60 | dB |
| Maximum Reverse Leakage Current | < 0.5 | μA |
| Working Peak Reverse Voltage (VRWM) | 24 | V |
| Breakdown Voltage (VBR) | 24.3 - 28 | V |
| Clamping Voltage @ 8 A (TLP) | 38 | V |
| Clamping Voltage @ 16 A (TLP) | 48 | V |
| Peak Power Dissipation (8/20 μs) | 120 | W |
| Junction and Storage Temperature Range | -55 to +150 | °C |
| Lead Solder Temperature (10 Second Duration) | 260 | °C |
Key Features
- Industry-leading capacitance linearity over voltage, making it ideal for RF applications.
- Ultra-low capacitance of less than 1.0 pF.
- Low insertion loss: 0.15 dB at 1 GHz and 0.60 dB at 3 GHz.
- Low leakage current of less than 0.5 μA.
- Protection compliant with IEC standards for ESD (Level 4 ±28 kV), EFT (40 A - 5/50 ns), and lightning (2.5 A - 8/20 μs).
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
- Pb-free, halogen/BFR free, and RoHS compliant.
- Wettable flank package for optimal automated optical inspection (AOI).
Applications
- RF signal ESD protection.
- Near Field Communications (NFC).
- USB 3.x Vbus protection.
- Antenna line protection in wireless handsets and terminals.
Q & A
- What is the primary function of the ESD7241N2T5G?
The primary function of the ESD7241N2T5G is to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events.
- What are the key features of the ESD7241N2T5G?
The key features include ultra-low capacitance, low insertion loss, low leakage current, and compliance with various IEC standards for ESD protection.
- What are the typical applications of the ESD7241N2T5G?
Typical applications include RF signal ESD protection, Near Field Communications (NFC), USB 3.x Vbus protection, and antenna line protection in wireless handsets and terminals.
- What is the maximum reverse working voltage (VRWM) of the ESD7241N2T5G?
The maximum reverse working voltage (VRWM) is 24 V.
- What is the breakdown voltage (VBR) of the ESD7241N2T5G?
The breakdown voltage (VBR) ranges from 24.3 V to 28 V.
- Is the ESD7241N2T5G compliant with automotive standards?
- What is the package type of the ESD7241N2T5G?
The device is available in X2DFN2 and X2DFNW2 packages.
- Is the ESD7241N2T5G Pb-free and RoHS compliant?
- What is the insertion loss of the ESD7241N2T5G at 1 GHz and 3 GHz?
The insertion loss is 0.15 dB at 1 GHz and 0.60 dB at 3 GHz.
- What are the clamping voltages at 8 A and 16 A TLP conditions?
The clamping voltages are 38 V at 8 A and 48 V at 16 A.
