ESD5481MUT3G
  • Share:

onsemi ESD5481MUT3G

Manufacturer No:
ESD5481MUT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TVS DIODE 5VWM 15VC 2X3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ESD5481MUT3G is an ESD protection diode designed by onsemi to safeguard voltage-sensitive components from electrostatic discharge (ESD). This micro-packaged diode is renowned for its excellent clamping capability, low leakage current, and fast response time, making it ideal for protecting designs exposed to ESD events.

Its compact size and low profile make it particularly suited for use in portable applications such as cellular phones, MP3 players, and digital cameras, where board space is limited.

Key Specifications

Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage VRWM I/O Pin to I/O Pin - - 5.0 V
Breakdown Voltage VBR IT = 5 μA 4.5 - 10 V
Breakdown Voltage VBR IT = 1 mA 5.7 - 8.0 V
Reverse Leakage Current IR VRWM = 5.0 V - - 1.0 μA A
Clamping Voltage VC IEC61000-4-2, ±8 kV Contact - - 19.7 - 23 V V
Clamping Voltage (8/20 μs Waveform) VC IPP = 1 A, IPP = 2 A 9.8 - 12.4 V - 12 - 15 V V
Dynamic Resistance RDYN Pin 1 to Pin 2, Pin 2 to Pin 1 0.49 Ω - 0.28 Ω Ω
Reverse Peak Pulse Current IPP IEC 61000-4-5 (8/20 μs) - - 2.0 A A
Junction Capacitance CJ VR = 0 V, f = 1 MHz 12 pF - 15 pF pF
Package Dimensions - - - - 0.60 mm x 0.30 mm x 0.3 mm mm
Maximum Junction Temperature TJ - -55°C - 150°C °C
Lead Solder Temperature (10 Second Duration) TL - - - 260°C °C

Key Features

  • Low Capacitance: 15 pF, ensuring minimal impact on high-frequency signals.
  • Low Clamping Voltage: Effective in limiting the voltage during ESD events.
  • Compact Size: Dimensions of 0.60 mm x 0.30 mm x 0.3 mm, ideal for space-constrained designs.
  • Fast Response Time: Less than 1 ns, providing rapid protection against ESD pulses.
  • Low Leakage Current: Minimal current leakage at the working voltage.
  • IEC 61000-4-2 Level 4 ESD Protection: Capable of withstanding ±20 kV contact and ±20 kV air discharges.
  • IEC 61000-4-4 Level 4 EFT Protection: Resistant to electrical fast transient (EFT) pulses.
  • RoHS Compliant: Pb-free, halogen-free, and BFR-free, ensuring environmental compliance.

Applications

  • Portable Electronics: Cellular phones, MP3 players, digital cameras, and other handheld devices.
  • Consumer Electronics: Tablets, smartwatches, and other consumer electronic devices.
  • Industrial Equipment: Protection in industrial control systems and automation devices.
  • Automotive Systems: ESD protection in automotive electronics and infotainment systems.

Q & A

  1. What is the primary function of the ESD5481MUT3G?

    The primary function of the ESD5481MUT3G is to protect voltage-sensitive components from electrostatic discharge (ESD).

  2. What are the dimensions of the ESD5481MUT3G package?

    The package dimensions are 0.60 mm x 0.30 mm x 0.3 mm.

  3. What is the maximum junction temperature for the ESD5481MUT3G?

    The maximum junction temperature is 150°C.

  4. Is the ESD5481MUT3G RoHS compliant?

    Yes, the ESD5481MUT3G is Pb-free, halogen-free, and BFR-free, making it RoHS compliant.

  5. What level of ESD protection does the ESD5481MUT3G offer according to IEC 61000-4-2?

    The ESD5481MUT3G offers Level 4 ESD protection, capable of withstanding ±20 kV contact and ±20 kV air discharges.

  6. What is the typical clamping voltage of the ESD5481MUT3G during an ESD event?

    The typical clamping voltage is between 19.7 V and 23 V for an 8 kV contact discharge.

  7. What is the dynamic resistance of the ESD5481MUT3G?

    The dynamic resistance is between 0.49 Ω and 0.28 Ω.

  8. What is the junction capacitance of the ESD5481MUT3G?

    The junction capacitance is between 12 pF and 15 pF at 1 MHz.

  9. Can the ESD5481MUT3G be used in automotive applications?

    Yes, the ESD5481MUT3G can be used in automotive electronics and infotainment systems for ESD protection.

  10. What is the maximum lead solder temperature for the ESD5481MUT3G?

    The maximum lead solder temperature is 260°C for a 10-second duration.

Product Attributes

Type:Zener
Unidirectional Channels:- 
Bidirectional Channels:1
Voltage - Reverse Standoff (Typ):5V (Max)
Voltage - Breakdown (Min):5.7V
Voltage - Clamping (Max) @ Ipp:15V
Current - Peak Pulse (10/1000µs):2A (8/20µs)
Power - Peak Pulse:- 
Power Line Protection:No
Applications:General Purpose
Capacitance @ Frequency:12pF @ 1MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:0201 (0603 Metric)
Supplier Device Package:2-X3DFN (0.6x0.3) (0201)
0 Remaining View Similar

In Stock

$0.04
20,547

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5Z/AA
DD26M2S5WV5Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number ESD5481MUT3G ESD5481MUT5G
Manufacturer onsemi onsemi
Product Status Active Active
Type Zener Zener
Unidirectional Channels - -
Bidirectional Channels 1 1
Voltage - Reverse Standoff (Typ) 5V (Max) 5V (Max)
Voltage - Breakdown (Min) 5.7V 5.7V
Voltage - Clamping (Max) @ Ipp 15V 12.4V
Current - Peak Pulse (10/1000µs) 2A (8/20µs) 2A (8/20µs)
Power - Peak Pulse - -
Power Line Protection No No
Applications General Purpose General Purpose
Capacitance @ Frequency 12pF @ 1MHz 12pF @ 1MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 0201 (0603 Metric) 0201 (0603 Metric)
Supplier Device Package 2-X3DFN (0.6x0.3) (0201) 2-X3DFN (0.6x0.3) (0201)

Related Product By Categories

PTVS20VS1UR,115
PTVS20VS1UR,115
Nexperia USA Inc.
TVS DIODE 20VWM 32.4VC CFP3
ESD8104MUTAG
ESD8104MUTAG
onsemi
TVS DIODE 3.3VWM 11.4VC 10UDFN
PUSB3F96X
PUSB3F96X
Nexperia USA Inc.
TVS DIODE 5.5VWM 4.6VC DFN2510A
MMBZ20VALT1G
MMBZ20VALT1G
onsemi
TVS DIODE 17VWM 28VC SOT23-3
PESD2CANFD27U-TR
PESD2CANFD27U-TR
Nexperia USA Inc.
TVS DIODE 27VWM 44VC TO236AB
PTVS36VS1UR,115
PTVS36VS1UR,115
Nexperia USA Inc.
TVS DIODE 36VWM 58.1VC CFP3
SZSMF6.5AT1G
SZSMF6.5AT1G
Littelfuse Inc.
TVS DIODE 6.5VWM 11.2VC SOD123FL
CM1213A-04MR
CM1213A-04MR
onsemi
TVS DIODE 3.3VWM 10VC 10MSOP
SM15T68A-M3/57T
SM15T68A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T36AHE3/52
SM6T36AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
ESD5384NCTBG
ESD5384NCTBG
onsemi
TVS DIODE 3VWM 9-WLCSP
SM15T200CAHM3_A/I
SM15T200CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC