ESD5481MUT3G
  • Share:

onsemi ESD5481MUT3G

Manufacturer No:
ESD5481MUT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TVS DIODE 5VWM 15VC 2X3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ESD5481MUT3G is an ESD protection diode designed by onsemi to safeguard voltage-sensitive components from electrostatic discharge (ESD). This micro-packaged diode is renowned for its excellent clamping capability, low leakage current, and fast response time, making it ideal for protecting designs exposed to ESD events.

Its compact size and low profile make it particularly suited for use in portable applications such as cellular phones, MP3 players, and digital cameras, where board space is limited.

Key Specifications

Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage VRWM I/O Pin to I/O Pin - - 5.0 V
Breakdown Voltage VBR IT = 5 μA 4.5 - 10 V
Breakdown Voltage VBR IT = 1 mA 5.7 - 8.0 V
Reverse Leakage Current IR VRWM = 5.0 V - - 1.0 μA A
Clamping Voltage VC IEC61000-4-2, ±8 kV Contact - - 19.7 - 23 V V
Clamping Voltage (8/20 μs Waveform) VC IPP = 1 A, IPP = 2 A 9.8 - 12.4 V - 12 - 15 V V
Dynamic Resistance RDYN Pin 1 to Pin 2, Pin 2 to Pin 1 0.49 Ω - 0.28 Ω Ω
Reverse Peak Pulse Current IPP IEC 61000-4-5 (8/20 μs) - - 2.0 A A
Junction Capacitance CJ VR = 0 V, f = 1 MHz 12 pF - 15 pF pF
Package Dimensions - - - - 0.60 mm x 0.30 mm x 0.3 mm mm
Maximum Junction Temperature TJ - -55°C - 150°C °C
Lead Solder Temperature (10 Second Duration) TL - - - 260°C °C

Key Features

  • Low Capacitance: 15 pF, ensuring minimal impact on high-frequency signals.
  • Low Clamping Voltage: Effective in limiting the voltage during ESD events.
  • Compact Size: Dimensions of 0.60 mm x 0.30 mm x 0.3 mm, ideal for space-constrained designs.
  • Fast Response Time: Less than 1 ns, providing rapid protection against ESD pulses.
  • Low Leakage Current: Minimal current leakage at the working voltage.
  • IEC 61000-4-2 Level 4 ESD Protection: Capable of withstanding ±20 kV contact and ±20 kV air discharges.
  • IEC 61000-4-4 Level 4 EFT Protection: Resistant to electrical fast transient (EFT) pulses.
  • RoHS Compliant: Pb-free, halogen-free, and BFR-free, ensuring environmental compliance.

Applications

  • Portable Electronics: Cellular phones, MP3 players, digital cameras, and other handheld devices.
  • Consumer Electronics: Tablets, smartwatches, and other consumer electronic devices.
  • Industrial Equipment: Protection in industrial control systems and automation devices.
  • Automotive Systems: ESD protection in automotive electronics and infotainment systems.

Q & A

  1. What is the primary function of the ESD5481MUT3G?

    The primary function of the ESD5481MUT3G is to protect voltage-sensitive components from electrostatic discharge (ESD).

  2. What are the dimensions of the ESD5481MUT3G package?

    The package dimensions are 0.60 mm x 0.30 mm x 0.3 mm.

  3. What is the maximum junction temperature for the ESD5481MUT3G?

    The maximum junction temperature is 150°C.

  4. Is the ESD5481MUT3G RoHS compliant?

    Yes, the ESD5481MUT3G is Pb-free, halogen-free, and BFR-free, making it RoHS compliant.

  5. What level of ESD protection does the ESD5481MUT3G offer according to IEC 61000-4-2?

    The ESD5481MUT3G offers Level 4 ESD protection, capable of withstanding ±20 kV contact and ±20 kV air discharges.

  6. What is the typical clamping voltage of the ESD5481MUT3G during an ESD event?

    The typical clamping voltage is between 19.7 V and 23 V for an 8 kV contact discharge.

  7. What is the dynamic resistance of the ESD5481MUT3G?

    The dynamic resistance is between 0.49 Ω and 0.28 Ω.

  8. What is the junction capacitance of the ESD5481MUT3G?

    The junction capacitance is between 12 pF and 15 pF at 1 MHz.

  9. Can the ESD5481MUT3G be used in automotive applications?

    Yes, the ESD5481MUT3G can be used in automotive electronics and infotainment systems for ESD protection.

  10. What is the maximum lead solder temperature for the ESD5481MUT3G?

    The maximum lead solder temperature is 260°C for a 10-second duration.

Product Attributes

Type:Zener
Unidirectional Channels:- 
Bidirectional Channels:1
Voltage - Reverse Standoff (Typ):5V (Max)
Voltage - Breakdown (Min):5.7V
Voltage - Clamping (Max) @ Ipp:15V
Current - Peak Pulse (10/1000µs):2A (8/20µs)
Power - Peak Pulse:- 
Power Line Protection:No
Applications:General Purpose
Capacitance @ Frequency:12pF @ 1MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:0201 (0603 Metric)
Supplier Device Package:2-X3DFN (0.6x0.3) (0201)
0 Remaining View Similar

In Stock

$0.04
20,547

Please send RFQ , we will respond immediately.

Same Series
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S00X/AA
DD26S2S00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number ESD5481MUT3G ESD5481MUT5G
Manufacturer onsemi onsemi
Product Status Active Active
Type Zener Zener
Unidirectional Channels - -
Bidirectional Channels 1 1
Voltage - Reverse Standoff (Typ) 5V (Max) 5V (Max)
Voltage - Breakdown (Min) 5.7V 5.7V
Voltage - Clamping (Max) @ Ipp 15V 12.4V
Current - Peak Pulse (10/1000µs) 2A (8/20µs) 2A (8/20µs)
Power - Peak Pulse - -
Power Line Protection No No
Applications General Purpose General Purpose
Capacitance @ Frequency 12pF @ 1MHz 12pF @ 1MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 0201 (0603 Metric) 0201 (0603 Metric)
Supplier Device Package 2-X3DFN (0.6x0.3) (0201) 2-X3DFN (0.6x0.3) (0201)

Related Product By Categories

MMBZ5V6ALT1G
MMBZ5V6ALT1G
onsemi
TVS DIODE 3VWM 8VC SOT23-3
TPD2E001DZDR
TPD2E001DZDR
Texas Instruments
TVS DIODE 5.5VWM 4SOP
ESDZV5-1BF4
ESDZV5-1BF4
STMicroelectronics
TVS DIODE 5.5VWM 10VC 0201
PTVS14VP1UP,115
PTVS14VP1UP,115
Nexperia USA Inc.
TVS DIODE 14VWM 23.2VC CFP5
ESDA25W
ESDA25W
STMicroelectronics
TVS DIODE 24VWM SOT323
SMA6F26AY
SMA6F26AY
STMicroelectronics
TVS DIODE 26VWM 42.1VC SMAFLAT
SM6T220CA
SM6T220CA
STMicroelectronics
TVS DIODE 188VWM 388VC SMB
SM15T100A-M3/57T
SM15T100A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
SM15T68A-E3/9AT
SM15T68A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM15T6V8CA-E3/9AT
SM15T6V8CA-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
SM6T6V8CAHE3/5B
SM6T6V8CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM15T33CAHM3/H
SM15T33CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3