ESD5481MUT3G
  • Share:

onsemi ESD5481MUT3G

Manufacturer No:
ESD5481MUT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TVS DIODE 5VWM 15VC 2X3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ESD5481MUT3G is an ESD protection diode designed by onsemi to safeguard voltage-sensitive components from electrostatic discharge (ESD). This micro-packaged diode is renowned for its excellent clamping capability, low leakage current, and fast response time, making it ideal for protecting designs exposed to ESD events.

Its compact size and low profile make it particularly suited for use in portable applications such as cellular phones, MP3 players, and digital cameras, where board space is limited.

Key Specifications

Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage VRWM I/O Pin to I/O Pin - - 5.0 V
Breakdown Voltage VBR IT = 5 μA 4.5 - 10 V
Breakdown Voltage VBR IT = 1 mA 5.7 - 8.0 V
Reverse Leakage Current IR VRWM = 5.0 V - - 1.0 μA A
Clamping Voltage VC IEC61000-4-2, ±8 kV Contact - - 19.7 - 23 V V
Clamping Voltage (8/20 μs Waveform) VC IPP = 1 A, IPP = 2 A 9.8 - 12.4 V - 12 - 15 V V
Dynamic Resistance RDYN Pin 1 to Pin 2, Pin 2 to Pin 1 0.49 Ω - 0.28 Ω Ω
Reverse Peak Pulse Current IPP IEC 61000-4-5 (8/20 μs) - - 2.0 A A
Junction Capacitance CJ VR = 0 V, f = 1 MHz 12 pF - 15 pF pF
Package Dimensions - - - - 0.60 mm x 0.30 mm x 0.3 mm mm
Maximum Junction Temperature TJ - -55°C - 150°C °C
Lead Solder Temperature (10 Second Duration) TL - - - 260°C °C

Key Features

  • Low Capacitance: 15 pF, ensuring minimal impact on high-frequency signals.
  • Low Clamping Voltage: Effective in limiting the voltage during ESD events.
  • Compact Size: Dimensions of 0.60 mm x 0.30 mm x 0.3 mm, ideal for space-constrained designs.
  • Fast Response Time: Less than 1 ns, providing rapid protection against ESD pulses.
  • Low Leakage Current: Minimal current leakage at the working voltage.
  • IEC 61000-4-2 Level 4 ESD Protection: Capable of withstanding ±20 kV contact and ±20 kV air discharges.
  • IEC 61000-4-4 Level 4 EFT Protection: Resistant to electrical fast transient (EFT) pulses.
  • RoHS Compliant: Pb-free, halogen-free, and BFR-free, ensuring environmental compliance.

Applications

  • Portable Electronics: Cellular phones, MP3 players, digital cameras, and other handheld devices.
  • Consumer Electronics: Tablets, smartwatches, and other consumer electronic devices.
  • Industrial Equipment: Protection in industrial control systems and automation devices.
  • Automotive Systems: ESD protection in automotive electronics and infotainment systems.

Q & A

  1. What is the primary function of the ESD5481MUT3G?

    The primary function of the ESD5481MUT3G is to protect voltage-sensitive components from electrostatic discharge (ESD).

  2. What are the dimensions of the ESD5481MUT3G package?

    The package dimensions are 0.60 mm x 0.30 mm x 0.3 mm.

  3. What is the maximum junction temperature for the ESD5481MUT3G?

    The maximum junction temperature is 150°C.

  4. Is the ESD5481MUT3G RoHS compliant?

    Yes, the ESD5481MUT3G is Pb-free, halogen-free, and BFR-free, making it RoHS compliant.

  5. What level of ESD protection does the ESD5481MUT3G offer according to IEC 61000-4-2?

    The ESD5481MUT3G offers Level 4 ESD protection, capable of withstanding ±20 kV contact and ±20 kV air discharges.

  6. What is the typical clamping voltage of the ESD5481MUT3G during an ESD event?

    The typical clamping voltage is between 19.7 V and 23 V for an 8 kV contact discharge.

  7. What is the dynamic resistance of the ESD5481MUT3G?

    The dynamic resistance is between 0.49 Ω and 0.28 Ω.

  8. What is the junction capacitance of the ESD5481MUT3G?

    The junction capacitance is between 12 pF and 15 pF at 1 MHz.

  9. Can the ESD5481MUT3G be used in automotive applications?

    Yes, the ESD5481MUT3G can be used in automotive electronics and infotainment systems for ESD protection.

  10. What is the maximum lead solder temperature for the ESD5481MUT3G?

    The maximum lead solder temperature is 260°C for a 10-second duration.

Product Attributes

Type:Zener
Unidirectional Channels:- 
Bidirectional Channels:1
Voltage - Reverse Standoff (Typ):5V (Max)
Voltage - Breakdown (Min):5.7V
Voltage - Clamping (Max) @ Ipp:15V
Current - Peak Pulse (10/1000µs):2A (8/20µs)
Power - Peak Pulse:- 
Power Line Protection:No
Applications:General Purpose
Capacitance @ Frequency:12pF @ 1MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:0201 (0603 Metric)
Supplier Device Package:2-X3DFN (0.6x0.3) (0201)
0 Remaining View Similar

In Stock

$0.04
20,547

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WV5Z/AA
DD26M2S5WV5Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number ESD5481MUT3G ESD5481MUT5G
Manufacturer onsemi onsemi
Product Status Active Active
Type Zener Zener
Unidirectional Channels - -
Bidirectional Channels 1 1
Voltage - Reverse Standoff (Typ) 5V (Max) 5V (Max)
Voltage - Breakdown (Min) 5.7V 5.7V
Voltage - Clamping (Max) @ Ipp 15V 12.4V
Current - Peak Pulse (10/1000µs) 2A (8/20µs) 2A (8/20µs)
Power - Peak Pulse - -
Power Line Protection No No
Applications General Purpose General Purpose
Capacitance @ Frequency 12pF @ 1MHz 12pF @ 1MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 0201 (0603 Metric) 0201 (0603 Metric)
Supplier Device Package 2-X3DFN (0.6x0.3) (0201) 2-X3DFN (0.6x0.3) (0201)

Related Product By Categories

SZESD7410N2T5G
SZESD7410N2T5G
onsemi
TVS DIODE 8VWM 20VC 2X2DFN
PTVS40VS1UR,115
PTVS40VS1UR,115
Nexperia USA Inc.
TVS DIODE 40VWM 64.5VC CFP3
TPD1E0B04DPYR
TPD1E0B04DPYR
Texas Instruments
TVS DIODE 3.6VWM 19VC 2X1SON
5KP43A-E3/54
5KP43A-E3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 43VWM 69.4VC P600
SM15T12A
SM15T12A
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMC
TPD4E001DPKR
TPD4E001DPKR
Texas Instruments
TVS DIODE 5.5VWM 6USON
SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
SM6T18AHE3_A/H
SM6T18AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SMBJ5.0CAHM3_A/H
SMBJ5.0CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
SM6T22CAHE3/5B
SM6T22CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SMBJ5.0CAHM4G
SMBJ5.0CAHM4G
Taiwan Semiconductor Corporation
TVS DIODE 5VWM 9.2VC DO214AA
SM15T200CAHM3_A/I
SM15T200CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB

Related Product By Brand

1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5