Overview
The DAN222G is a Common Cathode Silicon Epitaxial Planar Dual Diode designed and manufactured by onsemi. This device is specifically tailored for ultra-high speed switching applications, making it an ideal choice for environments where fast switching times and low capacitance are crucial. The DAN222G is housed in the SOT-416/SC-75 package, which is optimized for low power surface mount applications where board space is limited. The device is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
Characteristic | Symbol | Max Value | Unit |
---|---|---|---|
Power Dissipation | PD | 150 | mW |
Junction Temperature | TJ | 150 | °C/W |
Storage Temperature Range | Tstg | -55 to +150 | °C |
Reverse Voltage | VR | 80 | Vdc |
Peak Reverse Voltage | VRM | 80 | Vdc |
Forward Current | IF | 100 | mAdc |
Peak Forward Current | IFM | 300 | mAdc |
Peak Forward Surge Current | IFSM | 2.0 | Adc |
Reverse Voltage Leakage Current | IR | 0.1 | μAdc |
Forward Voltage | VF | 1.2 | Vdc |
Reverse Breakdown Voltage | VR | 80 | Vdc |
Diode Capacitance | CD | 3.5 | pF |
Reverse Recovery Time | trr | 4.0 | ns |
Key Features
- Fast reverse recovery time (trr) of 4.0 ns, making it suitable for ultra-high speed switching applications.
- Low diode capacitance (CD) of 3.5 pF, reducing switching losses and improving high-frequency performance.
- AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant, aligning with environmental and regulatory standards.
- Housed in the SOT-416/SC-75 package, ideal for low power surface mount applications where board space is limited.
Applications
The DAN222G is designed for use in various high-speed switching applications, including:
- Ultra-high speed switching circuits.
- Automotive systems requiring AEC-Q101 qualification.
- High-frequency signal processing.
- Low power surface mount designs where space is a constraint.
- General-purpose switching and rectification in electronic circuits.
Q & A
- What is the maximum reverse voltage rating of the DAN222G?
The maximum reverse voltage rating is 80 Vdc. - What is the maximum forward current of the DAN222G?
The maximum forward current is 100 mAdc, with a peak forward current of 300 mAdc. - What is the reverse recovery time of the DAN222G?
The reverse recovery time (trr) is 4.0 ns. - Is the DAN222G RoHS compliant?
Yes, the DAN222G is Pb-free, halogen-free, and RoHS compliant. - What package type is the DAN222G housed in?
The DAN222G is housed in the SOT-416/SC-75 package. - What are the storage temperature range limits for the DAN222G?
The storage temperature range is -55°C to +150°C. - Is the DAN222G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. - What is the maximum power dissipation of the DAN222G?
The maximum power dissipation is 150 mW. - What is the diode capacitance of the DAN222G?
The diode capacitance (CD) is 3.5 pF. - What is the forward voltage drop of the DAN222G?
The forward voltage drop (VF) is 1.2 Vdc.