DAN222G
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onsemi DAN222G

Manufacturer No:
DAN222G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 80V 100MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The DAN222G is a Common Cathode Silicon Epitaxial Planar Dual Diode designed and manufactured by onsemi. This device is specifically tailored for ultra-high speed switching applications, making it an ideal choice for environments where fast switching times and low capacitance are crucial. The DAN222G is housed in the SOT-416/SC-75 package, which is optimized for low power surface mount applications where board space is limited. The device is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

CharacteristicSymbolMax ValueUnit
Power DissipationPD150mW
Junction TemperatureTJ150°C/W
Storage Temperature RangeTstg-55 to +150°C
Reverse VoltageVR80Vdc
Peak Reverse VoltageVRM80Vdc
Forward CurrentIF100mAdc
Peak Forward CurrentIFM300mAdc
Peak Forward Surge CurrentIFSM2.0Adc
Reverse Voltage Leakage CurrentIR0.1μAdc
Forward VoltageVF1.2Vdc
Reverse Breakdown VoltageVR80Vdc
Diode CapacitanceCD3.5pF
Reverse Recovery Timetrr4.0ns

Key Features

  • Fast reverse recovery time (trr) of 4.0 ns, making it suitable for ultra-high speed switching applications.
  • Low diode capacitance (CD) of 3.5 pF, reducing switching losses and improving high-frequency performance.
  • AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant, aligning with environmental and regulatory standards.
  • Housed in the SOT-416/SC-75 package, ideal for low power surface mount applications where board space is limited.

Applications

The DAN222G is designed for use in various high-speed switching applications, including:

  • Ultra-high speed switching circuits.
  • Automotive systems requiring AEC-Q101 qualification.
  • High-frequency signal processing.
  • Low power surface mount designs where space is a constraint.
  • General-purpose switching and rectification in electronic circuits.

Q & A

  1. What is the maximum reverse voltage rating of the DAN222G?
    The maximum reverse voltage rating is 80 Vdc.
  2. What is the maximum forward current of the DAN222G?
    The maximum forward current is 100 mAdc, with a peak forward current of 300 mAdc.
  3. What is the reverse recovery time of the DAN222G?
    The reverse recovery time (trr) is 4.0 ns.
  4. Is the DAN222G RoHS compliant?
    Yes, the DAN222G is Pb-free, halogen-free, and RoHS compliant.
  5. What package type is the DAN222G housed in?
    The DAN222G is housed in the SOT-416/SC-75 package.
  6. What are the storage temperature range limits for the DAN222G?
    The storage temperature range is -55°C to +150°C.
  7. Is the DAN222G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  8. What is the maximum power dissipation of the DAN222G?
    The maximum power dissipation is 150 mW.
  9. What is the diode capacitance of the DAN222G?
    The diode capacitance (CD) is 3.5 pF.
  10. What is the forward voltage drop of the DAN222G?
    The forward voltage drop (VF) is 1.2 Vdc.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):100mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:100 nA @ 70 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75, SOT-416
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DAN222G
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Similar Products

Part Number DAN222G DAP222G
Manufacturer onsemi onsemi
Product Status Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Anode
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 80 V 80 V
Current - Average Rectified (Io) (per Diode) 100mA (DC) 100mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 100 mA 1.2 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 10 ns
Current - Reverse Leakage @ Vr 100 nA @ 70 V 100 nA @ 70 V
Operating Temperature - Junction 150°C (Max) 150°C (Max)
Mounting Type Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-75, SOT-416
Supplier Device Package SC-75, SOT-416 SC-75, SOT-416

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