Overview
The CPH6123-TL-E is a PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for a wide range of applications requiring high current and voltage handling capabilities. It is packaged in a SOT-457-6 format, making it suitable for various electronic circuits where space efficiency is crucial.
Key Specifications
| Parameter | Symbol | Conditions | Ratings | Unit |
|---|---|---|---|---|
| Transistor Type | - | - | PNP | - |
| Collector-Emitter Breakdown Voltage | Vceo | - | 50 V | V |
| Emitter-Base Voltage | VEBO | - | 6 V | V |
| Collector-Emitter Saturation Voltage | Vce(sat) | @ Ib, Ic | 650 mV | V |
| Collector Current (Max) | Ic | - | 3 A | A |
| Power Dissipation | Pd | - | 1.3 W | W |
| Gain Bandwidth Product | fT | - | 390 MHz | MHz |
Key Features
- High Current Handling: The CPH6123-TL-E can handle a maximum collector current of 3 A, making it suitable for applications requiring significant current flow.
- High Voltage Capability: With a collector-emitter breakdown voltage of 50 V, this transistor can operate in circuits with high voltage requirements.
- Low Saturation Voltage: The transistor has a low collector-emitter saturation voltage of 650 mV, which helps in reducing power losses in switching applications.
- Compact Packaging: The SOT-457-6 package is compact and suitable for space-constrained designs.
- High Gain Bandwidth Product: The transistor has a gain bandwidth product of 390 MHz, making it suitable for high-frequency applications.
Applications
- Power Amplifiers: The high current and voltage handling capabilities make the CPH6123-TL-E suitable for power amplifier circuits.
- Switching Circuits: The low saturation voltage and high current handling make it ideal for switching applications such as motor drivers and power supplies.
- High-Frequency Circuits: The high gain bandwidth product makes this transistor suitable for high-frequency applications such as RF amplifiers and oscillators.
- Automotive and Industrial Control: The robust specifications of the CPH6123-TL-E make it a good choice for automotive and industrial control systems.
Q & A
- What is the maximum collector current of the CPH6123-TL-E?
The maximum collector current is 3 A.
- What is the collector-emitter breakdown voltage of the CPH6123-TL-E?
The collector-emitter breakdown voltage is 50 V.
- What is the emitter-base voltage of the CPH6123-TL-E?
The emitter-base voltage is 6 V.
- What is the power dissipation of the CPH6123-TL-E?
The power dissipation is 1.3 W.
- What is the gain bandwidth product of the CPH6123-TL-E?
The gain bandwidth product is 390 MHz.
- What type of transistor is the CPH6123-TL-E?
The CPH6123-TL-E is a PNP bipolar junction transistor (BJT).
- What is the package type of the CPH6123-TL-E?
The package type is SOT-457-6.
- What are some common applications of the CPH6123-TL-E?
Common applications include power amplifiers, switching circuits, high-frequency circuits, and automotive and industrial control systems.
- What is the collector-emitter saturation voltage of the CPH6123-TL-E?
The collector-emitter saturation voltage is 650 mV.
- Is the CPH6123-TL-E RoHS compliant?
Yes, the CPH6123-TL-E is RoHS compliant.
