CAT93C46BVI-GT3
  • Share:

onsemi CAT93C46BVI-GT3

Manufacturer No:
CAT93C46BVI-GT3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC EEPROM 1KBIT SPI 4MHZ 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CAT93C46BVI-GT3 is an EEPROM memory IC optimized for high-speed operation, low-voltage supply, and self-timed write cycle with auto-clear. It is designed to provide excellent performance for storing configuration data, security keys, or calibration settings in various electronic devices. This component is manufactured by onsemi and is available in an 8-pin SOIC package.

Key Specifications

Parameter Value
Product Status Active
Memory Type Non-Volatile
Memory Format EEPROM
Technology EEPROM
Memory Size 1 Kbit
Memory Organization 128 x 8, 64 x 16
Memory Interface Microwire
Clock Frequency 4 MHz (5 V), 2 MHz (1.8 V)
Write Cycle Time - Word, Page 5 ms
Voltage - Supply 1.8 V ~ 5.5 V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)

Key Features

  • High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V)
  • Supply Voltage Range: 1.8 V to 5.5 V
  • Selectable x8 or x16 Memory Organization: The device allows users to select the memory organization as either 128x8 or 64x16 bits.
  • Self-Timed Write Cycle with Auto-Clear: This feature enables the device to automatically clear the write operation, eliminating the need for an external clear signal.
  • Sequential Read: The device supports sequential read operations, allowing users to quickly access and retrieve stored data.
  • Software Write Protection: This feature enables users to protect the device from accidental writes by disabling the write operation through software control.
  • Data Retention: The device provides 100-year data retention, ensuring that stored data remains intact over an extended period.
  • Low Power CMOS Technology: The device operates using low power consumption, making it suitable for battery-powered or energy-efficient applications.
  • Program/Erase Cycles: The device supports up to 1,000,000 program/erase cycles, ensuring reliable data storage and retrieval.
  • Powerup Inadvertant Write Protection: This feature prevents accidental writes during power-up or power-down transitions, ensuring data integrity.
  • Industrial Temperature Ranges: The device operates within industrial temperature ranges, making it suitable for use in a wide range of applications and environments.

Applications

  • Smart Cards and RFID Tags: The CAT93C46BVI-GT3 is commonly used in low-power, small-footprint applications like smart cards and RFID tags.
  • Configuration Data Storage: The device can be used to store configuration data for various electronic devices, ensuring reliable operation and minimizing the need for manual adjustments.
  • Security Key Storage: The device provides a secure means of storing security keys or encryption data, protecting sensitive information from unauthorized access.

Q & A

  1. Q: What is the maximum write endurance of the CAT93C46BVI-GT3?
    A: The device supports up to 1,000,000 program/erase cycles.
  2. Q: Can I use the CAT93C46BVI-GT3 in a high-temperature environment?
    A: Yes, the device operates within industrial temperature ranges, making it suitable for use in a wide range of applications and environments.
  3. Q: How do I prevent accidental writes during power-up or power-down transitions?
    A: The device provides powerup inadvertant write protection, which prevents accidental writes during these transitions.
  4. Q: Can I use the CAT93C46BVI-GT3 in a low-power application?
    A: Yes, the device operates using low power consumption, making it suitable for battery-powered or energy-efficient applications.
  5. Q: What is the memory organization of the CAT93C46BVI-GT3?
    A: The device allows users to select the memory organization as either 128x8 or 64x16 bits.
  6. Q: What is the clock frequency of the CAT93C46BVI-GT3?
    A: The clock frequency is 4 MHz (5 V) and 2 MHz (1.8 V).
  7. Q: What is the write cycle time for the CAT93C46BVI-GT3?
    A: The write cycle time is 5 ms.
  8. Q: What is the operating voltage range of the CAT93C46BVI-GT3?
    A: The operating voltage range is 1.8 V to 5.5 V.
  9. Q: What is the package type of the CAT93C46BVI-GT3?
    A: The device is available in an 8-pin SOIC package.
  10. Q: What is the data retention period of the CAT93C46BVI-GT3?
    A: The device provides 100-year data retention.

Product Attributes

Memory Type:Non-Volatile
Memory Format:EEPROM
Technology:EEPROM
Memory Size:1Kb (128 x 8, 64 x 16)
Memory Interface:SPI
Clock Frequency:4 MHz
Write Cycle Time - Word, Page:5ms
Access Time:- 
Voltage - Supply:1.8V ~ 5.5V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
0 Remaining View Similar

In Stock

$0.27
66

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number CAT93C46BVI-GT3 CAT93C46BYI-GT3 CAT93C76BVI-GT3 CAT93C46VI-GT3 CAT93C46RVI-GT3 CAT93C46RBVI-GT3 CAT93C46BWI-GT3 CAT93C46BVE-GT3
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete Obsolete Active Active Active
Memory Type Non-Volatile Non-Volatile Non-Volatile Non-Volatile Non-Volatile Non-Volatile Non-Volatile Non-Volatile
Memory Format EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM
Technology EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM
Memory Size 1Kb (128 x 8, 64 x 16) 1Kb (128 x 8, 64 x 16) 8Kb (1K x 8, 512 x 16) 1Kb (128 x 8, 64 x 16) 1Kb (128 x 8, 64 x 16) 1Kb (128 x 8, 64 x 16) 1Kb (128 x 8, 64 x 16) 1Kb (128 x 8, 64 x 16)
Memory Interface SPI SPI SPI SPI SPI SPI SPI SPI
Clock Frequency 4 MHz 4 MHz 4 MHz 2 MHz 4 MHz 4 MHz 4 MHz 4 MHz
Write Cycle Time - Word, Page 5ms 5ms - - - - 5ms 5ms
Access Time - - - - - - - -
Voltage - Supply 1.8V ~ 5.5V 1.8V ~ 5.5V 1.8V ~ 5.5V 1.8V ~ 5.5V 1.8V ~ 5.5V 1.8V ~ 5.5V 1.8V ~ 5.5V 1.8V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 125°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-TSSOP 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC

Related Product By Categories

W25X20CLSNIG
W25X20CLSNIG
Winbond Electronics
IC FLASH 2MBIT SPI 104MHZ 8SOIC
MT41K512M8DA-107:P
MT41K512M8DA-107:P
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 78FBGA
MT29F8G08ABACAWP-IT:C
MT29F8G08ABACAWP-IT:C
Micron Technology Inc.
IC FLASH 8GBIT PARALLEL 48TSOP I
M24C01-WMN6TP/S
M24C01-WMN6TP/S
STMicroelectronics
IC EEPROM 1KBIT I2C 400KHZ 8SO
M24C02-DRMF3TG/K
M24C02-DRMF3TG/K
STMicroelectronics
IC EEPROM 2KBIT I2C 1MHZ 8MLP
M95512-WMN6TP
M95512-WMN6TP
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
MT29F2G01ABAGDWB-IT:G
MT29F2G01ABAGDWB-IT:G
Micron Technology Inc.
IC FLASH 2GBIT SPI 8UPDFN
M24C04-WBN6P
M24C04-WBN6P
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8DIP
M29F010B45K1
M29F010B45K1
STMicroelectronics
IC FLASH 1MBIT PARALLEL 32PLCC
M29F040B70K1
M29F040B70K1
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 32PLCC
MTFC8GAKAJCN-4M IT TR
MTFC8GAKAJCN-4M IT TR
Micron Technology Inc.
IC FLASH 64GBIT MMC 153VFBGA
PCF8594C-2T/02,112
PCF8594C-2T/02,112
NXP USA Inc.
IC EEPROM 4KBIT I2C 100KHZ 8SO

Related Product By Brand

MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN