BUB323ZT4G
  • Share:

onsemi BUB323ZT4G

Manufacturer No:
BUB323ZT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN DARL 350V 10A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi BUB323ZT4G is a high-performance NPN Silicon Power Darlington transistor designed for high-voltage applications. It is packaged in a D2PAK (TO-263) case, which is suitable for surface mount technology (SMT). This transistor is known for its robust characteristics, including a built-in avalanche diode and a special high voltage driving circuit, making it ideal for various power management and control systems.

Key Specifications

ParameterValue
Transistor TypeNPN Darlington
Collector-Emitter Breakdown Voltage (Vceo)350 V
Maximum DC Collector Current10 A
DC Current Gain (hFE@Vce,Ic)500 @ 4.6 V, 5 A
Emitter-Base Voltage (VEBO)6 V
Power Dissipation (Pd)150 W
Mounting StyleSMD/SMT (D2PAK/TO-263)

Key Features

  • High voltage capability with a collector-emitter breakdown voltage of 350 V.
  • High current handling with a maximum DC collector current of 10 A.
  • High power dissipation of up to 150 W.
  • Built-in avalanche diode for protection against voltage spikes.
  • Special high voltage driving circuit for enhanced performance.
  • Surface mount technology (SMT) compatible D2PAK (TO-263) package.

Applications

The onsemi BUB323ZT4G is suitable for a variety of high-power applications, including:

  • Power management systems.
  • Motor control circuits.
  • High-voltage switching applications.
  • Automotive systems requiring high reliability and durability.
  • Industrial control systems.

Q & A

  1. What is the collector-emitter breakdown voltage of the BUB323ZT4G?
    The collector-emitter breakdown voltage is 350 V.
  2. What is the maximum DC collector current of the BUB323ZT4G?
    The maximum DC collector current is 10 A.
  3. What is the power dissipation capability of the BUB323ZT4G?
    The power dissipation capability is up to 150 W.
  4. What type of package does the BUB323ZT4G use?
    The BUB323ZT4G is packaged in a D2PAK (TO-263) case.
  5. Does the BUB323ZT4G have built-in protection features?
    Yes, it includes a built-in avalanche diode for protection against voltage spikes.
  6. What is the typical application of the BUB323ZT4G?
    The BUB323ZT4G is typically used in high-power applications such as power management systems, motor control circuits, and high-voltage switching applications.
  7. Is the BUB323ZT4G suitable for automotive applications?
    Yes, it is suitable for automotive systems due to its high reliability and durability.
  8. What is the DC current gain of the BUB323ZT4G?
    The DC current gain (hFE) is 500 @ 4.6 V, 5 A.
  9. Is the BUB323ZT4G compatible with surface mount technology (SMT)?
    Yes, it is SMT compatible.
  10. What is the emitter-base voltage (VEBO) of the BUB323ZT4G?
    The emitter-base voltage (VEBO) is 6 V.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):350 V
Vce Saturation (Max) @ Ib, Ic:1.7V @ 250mA, 10A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:500 @ 5A, 4.6V
Power - Max:150 W
Frequency - Transition:2MHz
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
0 Remaining View Similar

In Stock

$3.31
163

Please send RFQ , we will respond immediately.

Same Series
NJVBUB323ZT4G
NJVBUB323ZT4G
TRANS NPN DARL 350V 10A D2PAK
BUB323ZG
BUB323ZG
TRANS NPN DARL 350V 10A D2PAK
BUB323ZT4
BUB323ZT4
TRANS NPN DARL 350V 10A D2PAK
BUB323Z
BUB323Z
TRANS NPN DARL 350V 10A D2PAK

Similar Products

Part Number BUB323ZT4G BUB323ZT4
Manufacturer onsemi onsemi
Product Status Active Obsolete
Transistor Type NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 10 A 10 A
Voltage - Collector Emitter Breakdown (Max) 350 V 350 V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 250mA, 10A 1.7V @ 250mA, 10A
Current - Collector Cutoff (Max) 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 5A, 4.6V 500 @ 5A, 4.6V
Power - Max 150 W 150 W
Frequency - Transition 2MHz 2MHz
Operating Temperature -65°C ~ 175°C (TJ) -65°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK D²PAK

Related Product By Categories

MJD42CT4G
MJD42CT4G
onsemi
TRANS PNP 100V 6A DPAK
BCX17,235
BCX17,235
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
BC857BWE6327
BC857BWE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC858BMTF
BC858BMTF
Fairchild Semiconductor
TRANS PNP 30V 0.1A SOT23-3
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
BC857AW_R1_00001
BC857AW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
2SC3648T-TD-E
2SC3648T-TD-E
onsemi
TRANS NPN 160V 0.7A PCP
DS2003CMX/NOPB
DS2003CMX/NOPB
National Semiconductor
SMALL SIGNAL BIPOLAR TRANSISTOR,
KSA1220AYS
KSA1220AYS
onsemi
TRANS PNP 160V 1.2A TO126
TIP32CTSTU
TIP32CTSTU
onsemi
TRANS PNP 100V 3A TO220-3
TIP30C-S
TIP30C-S
Bourns Inc.
TRANS PNP 100V 1A TO220

Related Product By Brand

1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP