BCW72LT1G
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onsemi BCW72LT1G

Manufacturer No:
BCW72LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCW72LT1G is a high-performance NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for general-purpose applications and is known for its reliability and efficiency. It features a compact SOT-23-3 package, making it suitable for a wide range of electronic circuits where space is a constraint.

Key Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)45Vdc
Collector-Base Voltage (VCBO)50Vdc
Emitter-Base Voltage (VEBO)-Vdc
Maximum DC Collector Current100mA
Package TypeSOT-23-3-
Power Dissipation225mW

Key Features

  • High collector-emitter voltage of 45 V, ensuring robust performance in various applications.
  • Compact SOT-23-3 package, ideal for space-constrained designs.
  • Maximum DC collector current of 100 mA, suitable for a range of low to medium current applications.
  • Low power dissipation of 225 mW, contributing to energy efficiency.
  • General-purpose NPN transistor, versatile for use in amplifiers, switches, and other electronic circuits.

Applications

The BCW72LT1G NPN transistor is versatile and can be used in a variety of applications, including:

  • Amplifier circuits: Due to its high collector-emitter voltage and moderate current handling, it is suitable for amplifier stages in audio and other signal processing applications.
  • Switching circuits: Its low power dissipation and compact package make it ideal for switching applications in digital circuits.
  • General-purpose electronics: It can be used in various general-purpose electronic circuits where a reliable and efficient NPN transistor is required.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BCW72LT1G transistor?
    The collector-emitter voltage (VCEO) of the BCW72LT1G transistor is 45 Vdc.
  2. What is the maximum DC collector current of the BCW72LT1G transistor?
    The maximum DC collector current of the BCW72LT1G transistor is 100 mA.
  3. What is the package type of the BCW72LT1G transistor?
    The BCW72LT1G transistor comes in a SOT-23-3 package.
  4. What is the power dissipation of the BCW72LT1G transistor?
    The power dissipation of the BCW72LT1G transistor is 225 mW.
  5. Is the BCW72LT1G transistor suitable for high-power applications?
    No, the BCW72LT1G transistor is not suitable for high-power applications due to its limited current and power handling capabilities.
  6. What are some common applications of the BCW72LT1G transistor?
    The BCW72LT1G transistor is commonly used in amplifier circuits, switching circuits, and other general-purpose electronic circuits.
  7. Is the BCW72LT1G transistor RoHS compliant?
    Yes, the BCW72LT1G transistor is RoHS compliant.
  8. What is the emitter-base voltage (VEBO) of the BCW72LT1G transistor?
    The emitter-base voltage (VEBO) is not specified in the provided sources, but it is typically negative for NPN transistors.
  9. Where can I purchase the BCW72LT1G transistor?
    The BCW72LT1G transistor can be purchased from various electronic component distributors such as Digi-Key, Mouser, RS Components, and LCSC.
  10. What is the collector-base voltage (VCBO) of the BCW72LT1G transistor?
    The collector-base voltage (VCBO) of the BCW72LT1G transistor is 50 Vdc.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:300 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

$0.20
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Same Series
SBCW72LT1G
SBCW72LT1G
TRANS NPN 45V 0.1A SOT23-3
BCW72LT1
BCW72LT1
TRANS NPN 45V 0.1A SOT23-3

Similar Products

Part Number BCW72LT1G BCW70LT1G BCW72LT1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA 300mV @ 500µA, 10mA 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 215 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 300 mW 225 mW 300 mW
Frequency - Transition 300MHz - 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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