Overview
The BAV199LT1G is a dual series switching diode produced by onsemi, designed for high-speed switching applications. This device features two diodes connected in series, encapsulated in a small SOT-23 surface-mount package. It is particularly suited for applications requiring low leakage current and medium speed switching times. The BAV199LT1G is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications with unique site and control change requirements. Additionally, the device is Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Reverse Voltage | VR | 70 | Vdc |
| Forward Current | IF | 215 | mAdc |
| Peak Forward Surge Current | IFM(surge) | 500 | mAdc |
| Repetitive Peak Reverse Voltage | VRRM | 70 | Vdc |
| Average Rectified Forward Current | IF(AV) | 715 | mAdc |
| Repetitive Peak Forward Current | IFRM | 450 | mAdc |
| Non-Repetitive Peak Forward Current (t = 1.0 μs, 1.0 ms, 1.0 s) | IFSM | 2.0, 1.0, 0.5 | A |
| Reverse Voltage Leakage Current (VR = 70 Vdc, TJ = 150°C) | IR | 5.0 | nAdc |
| Forward Voltage (IF = 1.0 mA, 10 mA, 50 mA, 150 mA) | VF | 900, 1000, 1100, 1250 | mVdc |
| Reverse Recovery Time (IF = IR = 10 mA) | trr | 3.0 | μs |
| Diode Capacitance (VR = 0 V, f = 1.0 MHz) | CD | 2.0 | pF |
| Junction and Storage Temperature | TJ, Tstg | -65 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | C/W |
Key Features
- Low leakage current
- Medium speed switching times
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
- Pb-free, halogen-free, and RoHS compliant
- Encapsulated in a small SOT-23 surface-mount package
- High reliability and robust performance in various environmental conditions
Applications
The BAV199LT1G is versatile and can be used in a variety of applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
- Industrial control systems: Its medium speed switching times and low leakage current make it ideal for industrial control applications.
- Consumer electronics: It can be used in various consumer electronic devices requiring reliable switching diodes.
- Power supplies: The diode's characteristics make it suitable for use in power supply circuits.
Q & A
- What is the maximum reverse voltage of the BAV199LT1G?
The maximum reverse voltage (VR) is 70 Vdc. - What is the forward current rating of the BAV199LT1G?
The forward current (IF) is rated at 215 mA. - Is the BAV199LT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. - What is the package type of the BAV199LT1G?
The device is encapsulated in a SOT-23 surface-mount package. - What are the thermal characteristics of the BAV199LT1G?
The junction and storage temperature range is -65 to +150°C, and the thermal resistance, junction-to-ambient (RθJA), is 417 C/W. - What is the reverse recovery time of the BAV199LT1G?
The reverse recovery time (trr) is 3.0 μs. - Is the BAV199LT1G RoHS compliant?
Yes, the device is Pb-free, halogen-free, and RoHS compliant. - What is the maximum peak forward surge current of the BAV199LT1G?
The maximum peak forward surge current (IFM(surge)) is 500 mA. - What is the average rectified forward current of the BAV199LT1G?
The average rectified forward current (IF(AV)) is 715 mA. - What is the diode capacitance of the BAV199LT1G?
The diode capacitance (CD) is 2.0 pF at VR = 0 V and f = 1.0 MHz.
