Overview
The BAT54S_G is a planar Schottky barrier diode encapsulated in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. This diode is known for its low forward voltage, fast switching capabilities, and integrated guard ring for stress protection. It is widely used in various electronic applications due to its high reliability and performance characteristics.
Key Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Reverse Breakdown Voltage | VBR | - | - | 30 | V |
| Leakage Current | IR | - | - | 2 | μA |
| Forward Voltage | VF | - | 240 | 800 | mV |
| Diode Capacitance | CD | - | - | 10 | pF |
| Reverse Recovery Time | trr | - | - | 5 | ns |
| Peak Repetitive Reverse Voltage | VRRM | - | - | 30 | V |
| Average Rectified Output Current | IO | - | - | 200 | mA |
| Power Dissipation | PD | - | - | 200 | mW |
| Thermal Resistance Junction to Ambient Air | RθJA | - | - | 500 | °C/W |
| Operating Temperature Range | TJ | -55 | - | 125 | °C |
Key Features
- Very low turn-on voltage and fast switching capabilities.
- Integrated guard ring for transient and ESD protection.
- Totally lead-free and fully RoHS compliant.
- AEC-Q101 qualified for high reliability in automotive applications.
- Low forward voltage and low capacitance.
- Ultra high-speed switching.
- Line termination and voltage clamping capabilities.
- Reverse polarity protection.
Applications
The BAT54S_G Schottky diode is versatile and finds applications across various industries, including:
- Automotive systems for voltage clamping and line termination.
- Industrial applications requiring high-speed switching and low forward voltage drop.
- Consumer electronics for power management and protection circuits.
- Mobile and wearable devices where low power consumption and high reliability are crucial.
Q & A
- What is the typical forward voltage of the BAT54S_G diode?
The typical forward voltage (VF) of the BAT54S_G diode ranges from 240 mV to 800 mV depending on the current.
- What is the maximum reverse breakdown voltage of the BAT54S_G diode?
The maximum reverse breakdown voltage (VBR) of the BAT54S_G diode is 30 V.
- What is the operating temperature range of the BAT54S_G diode?
The operating temperature range of the BAT54S_G diode is from -55°C to +125°C.
- Is the BAT54S_G diode RoHS compliant?
Yes, the BAT54S_G diode is totally lead-free and fully RoHS compliant.
- What is the package type of the BAT54S_G diode?
The BAT54S_G diode is encapsulated in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
- What are the key features of the BAT54S_G diode?
The key features include very low turn-on voltage, fast switching, integrated guard ring for protection, and low capacitance.
- What are the typical applications of the BAT54S_G diode?
The BAT54S_G diode is used in automotive, industrial, consumer electronics, and mobile/wearable devices for voltage clamping, line termination, and power management.
- Is the BAT54S_G diode AEC-Q101 qualified?
Yes, the BAT54S_G diode is AEC-Q101 qualified for high reliability in automotive applications.
- What is the maximum power dissipation of the BAT54S_G diode?
The maximum power dissipation (PD) of the BAT54S_G diode is 200 mW.
- What is the thermal resistance junction to ambient air of the BAT54S_G diode?
The thermal resistance junction to ambient air (RθJA) of the BAT54S_G diode is 500 °C/W.
