Overview
The 2N5401YTA is a PNP general-purpose bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for high-voltage applications and is widely used in various electronic circuits due to its robust specifications and reliability. This transistor is housed in a TO-92 package, making it suitable for a range of applications requiring high collector breakdown voltages and low saturation voltages.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | -150 | V |
| Collector-Base Voltage (VCBO) | -160 | V |
| Emitter-Base Voltage (VEBO) | -5 | V |
| Collector Current (IC max) | -600 mA | mA |
| Total Device Dissipation (PD) | 625 mW | mW |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to 150 °C | °C |
| Transition Frequency (ft) | 100 MHz | MHz |
| Collector Capacitance (Cc) | 6 pF | pF |
| Forward Current Transfer Ratio (hFE), MIN | 60 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | -0.5 V | V |
Key Features
- High Collector Breakdown Voltage: The 2N5401YTA has a high collector-emitter voltage (VCEO) of -150V and collector-base voltage (VCBO) of -160V, making it suitable for high-voltage applications.
- Low Saturation Voltage: It features a low collector-emitter saturation voltage (VCE(sat)) of -0.5V, which is beneficial for reducing power losses in switching applications.
- High Current Gain: The transistor has a forward current transfer ratio (hFE) range of 60 to 240, ensuring reliable amplification in various circuits.
- Low Leakage Current: The emitter cut-off current (IEBO) and collector cut-off current (ICBO) are both very low, typically under 50 μA, which helps in minimizing standby power consumption.
- Wide Operating Temperature Range: The device can operate over a temperature range of -55°C to 150°C, making it versatile for different environmental conditions.
Applications
- Amplifiers: The 2N5401YTA is commonly used in amplifier circuits due to its high current gain and low saturation voltage.
- Switches: Its high collector breakdown voltage and low saturation voltage make it suitable for switching applications.
- General Purpose Circuits: It is used in various general-purpose electronic circuits requiring reliable and efficient transistor performance.
- High Voltage Applications: The transistor's high voltage ratings make it ideal for applications involving high voltages.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the 2N5401YTA transistor?
The maximum collector-emitter voltage (VCEO) of the 2N5401YTA transistor is -150V.
- What is the maximum collector current (IC max) of the 2N5401YTA transistor?
The maximum collector current (IC max) of the 2N5401YTA transistor is -600 mA.
- What is the total device dissipation (PD) of the 2N5401YTA transistor?
The total device dissipation (PD) of the 2N5401YTA transistor is 625 mW.
- What is the operating temperature range of the 2N5401YTA transistor?
The operating and storage junction temperature range (TJ, TSTG) of the 2N5401YTA transistor is -55°C to 150°C.
- What is the transition frequency (ft) of the 2N5401YTA transistor?
The transition frequency (ft) of the 2N5401YTA transistor is 100 MHz.
- What is the collector-emitter saturation voltage (VCE(sat)) of the 2N5401YTA transistor?
The collector-emitter saturation voltage (VCE(sat)) of the 2N5401YTA transistor is -0.5 V.
- What is the forward current transfer ratio (hFE) range of the 2N5401YTA transistor?
The forward current transfer ratio (hFE) range of the 2N5401YTA transistor is 60 to 240.
- In what package is the 2N5401YTA transistor available?
The 2N5401YTA transistor is available in a TO-92 package.
- What are some common applications of the 2N5401YTA transistor?
The 2N5401YTA transistor is commonly used in amplifiers, switches, and general-purpose electronic circuits requiring high voltage and low saturation voltage.
- Is the 2N5401YTA transistor suitable for high-temperature environments?
Yes, the 2N5401YTA transistor can operate over a wide temperature range from -55°C to 150°C, making it suitable for various environmental conditions).
