Overview
The 2N5061RLRAG is a sensitive gate silicon controlled rectifier (SCR) from onsemi, designed as a reverse blocking thyristor. It is part of the 2N5060 series, which includes annular PNPN devices suitable for high-volume consumer applications. These devices are packaged in an inexpensive plastic TO-92 package, making them adaptable for use in automatic insertion equipment. The 2N5061RLRAG is particularly useful in applications requiring low gate trigger currents and high reliability.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Off-State Voltage | VDRM, VRRM | 60 | V |
| On-State Current RMS (180° Conduction Angles; TC = 80°C) | IT(RMS) | 0.8 | A |
| Average On-State Current (180° Conduction Angles; TC = 67°C, TC = 102°C) | IT(AV) | 0.51, 0.255 | A |
| Peak Non-repetitive Surge Current, TA = 25°C (1/2 cycle, Sine Wave, 60 Hz) | ITSM | 10 | A |
| Gate Trigger Current (Continuous DC) | IGT | 200 µA (TC = 25°C), 350 µA (TC = -40°C) | µA |
| Gate Trigger Voltage (Continuous DC) | VGT | 0.8 V (TC = 25°C), 1.2 V (TC = -40°C) | V |
| Holding Current | IH | 5 mA (TC = 25°C), 10 mA (TC = -40°C) | mA |
| Operating Junction Temperature Range | TJ | -40 to +110 | °C |
| Storage Temperature Range | Tstg | -40 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 75 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 200 | °C/W |
Key Features
- Sensitive Gate Trigger Current: Maximum of 200 µA
- Low Reverse and Forward Blocking Current: Maximum of 50 µA at TC = 110°C
- Low Holding Current: Maximum of 5 mA
- Passivated Surface for Reliability and Uniformity
- Pb-Free Devices
- Inexpensive Plastic TO-92/TO-226AA Package
- Adaptable for Automatic Insertion Equipment
Applications
- Relay and Lamp Drivers
- Small Motor Controls
- Gate Drivers for Larger Thyristors
- Sensing and Detection Circuits
Q & A
- What is the peak repetitive off-state voltage for the 2N5061RLRAG?
The peak repetitive off-state voltage (VDRM, VRRM) for the 2N5061RLRAG is 60 V.
- What is the maximum gate trigger current for the 2N5061RLRAG?
The maximum gate trigger current (IGT) for the 2N5061RLRAG is 200 µA at TC = 25°C and 350 µA at TC = -40°C.
- What is the holding current for the 2N5061RLRAG?
The holding current (IH) for the 2N5061RLRAG is 5 mA at TC = 25°C and 10 mA at TC = -40°C.
- What are the operating and storage temperature ranges for the 2N5061RLRAG?
The operating junction temperature range is -40 to +110°C, and the storage temperature range is -40 to +150°C.
- What is the thermal resistance, junction-to-case and junction-to-ambient for the 2N5061RLRAG?
The thermal resistance, junction-to-case (RJC) is 75°C/W, and the thermal resistance, junction-to-ambient (RJA) is 200°C/W.
- What are some typical applications for the 2N5061RLRAG?
Typical applications include relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.
- Is the 2N5061RLRAG a Pb-Free device?
- What package type is the 2N5061RLRAG available in?
The 2N5061RLRAG is available in an inexpensive plastic TO-92 package).
- What is the peak non-repetitive surge current for the 2N5061RLRAG?
The peak non-repetitive surge current (ITSM) for the 2N5061RLRAG is 10 A at TA = 25°C).
- What is the forward peak gate power for the 2N5061RLRAG?
The forward peak gate power (PGM) for the 2N5061RLRAG is 0.1 W for a pulse width of less than 1.0 µsec at TA = 25°C).
