Overview
The BTW69-1200N is a high-performance SCR (Silicon-Controlled Rectifier) thyristor produced by STMicroelectronics. This component is available in a non-insulated TOP3 high power package, making it suitable for applications where power switching and power dissipation are critical. The BTW69-1200N is designed using clip assembly technology, which enhances its surge current handling and thermal cooling capabilities.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| RMS On-state Current (IT(RMS)) | 50 | A |
| Blocking Voltage (VDRM/VRRM) | 1200 | V |
| Gate Current (IGT) | 50 | mA |
| Average On-state Current (IT(AV)) | 31 | A |
| Non-repetitive Surge Peak On-state Current (ITSM) | 763 (tp = 8.3 ms), 700 (tp = 10 ms) | A |
| Critical Rate of Rise of On-state Current (dl/dt) | 100 A/μs | A/μs |
| Peak Gate Current (IGM) | 8 | A |
| Storage Junction Temperature Range (Tstg) | -40 to +150 | °C |
| Operating Junction Temperature Range (Tj) | -40 to +125 | °C |
| Junction to Case Thermal Resistance (Rth(j-c)) | 0.45 | °C/W |
| Junction to Ambient Thermal Resistance (Rth(j-a)) | 50 | °C/W |
Key Features
- High surge current handling capability up to 763 A for 8.3 ms and 700 A for 10 ms.
- Superior thermal cooling capabilities due to clip assembly technology.
- High blocking voltage of 1200 V.
- Low on-state dynamic resistance (RD) of 8.5 mΩ at Tj = 125 °C.
- Gate current of 50 mA with a peak gate current of 8 A.
- Wide operating junction temperature range from -40 °C to +125 °C.
- Available in non-insulated TOP3 high power package.
- Compliant with ECOPACK environmental standards.
Applications
- Solid state relays.
- Battery charging systems.
- Uninterruptible power supplies (UPS).
- Variable speed motor drives.
- Industrial welding systems.
- Bypass AC switches.
- Controlled AC rectifier bridges.
- Motor driver applications.
Q & A
- What is the maximum RMS on-state current of the BTW69-1200N?
The maximum RMS on-state current is 50 A at a case temperature of 102 °C.
- What is the blocking voltage of the BTW69-1200N?
The blocking voltage (VDRM/VRRM) is 1200 V.
- What is the gate current required for the BTW69-1200N?
The gate current (IGT) is 50 mA, with a maximum gate trigger voltage of 1.3 V.
- What are the thermal resistance values for the BTW69-1200N?
The junction to case thermal resistance (Rth(j-c)) is 0.45 °C/W, and the junction to ambient thermal resistance (Rth(j-a)) is 50 °C/W.
- What are the typical applications of the BTW69-1200N?
Typical applications include solid state relays, battery charging systems, UPS, variable speed motor drives, industrial welding systems, and bypass AC switches.
- What is the maximum surge peak on-state current for the BTW69-1200N?
The non-repetitive surge peak on-state current is 763 A for a pulse duration of 8.3 ms and 700 A for a pulse duration of 10 ms.
- What is the operating junction temperature range for the BTW69-1200N?
The operating junction temperature range is from -40 °C to +125 °C.
- What package type is the BTW69-1200N available in?
The BTW69-1200N is available in a non-insulated TOP3 high power package.
- Is the BTW69-1200N environmentally compliant?
Yes, the BTW69-1200N is compliant with ECOPACK environmental standards.
- What is the maximum average on-state current for the BTW69-1200N?
The maximum average on-state current (IT(AV)) is 31 A at a case temperature of 102 °C.
