PMBT4401/S911215
  • Share:

NXP USA Inc. PMBT4401/S911215

Manufacturer No:
PMBT4401/S911215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMBT4401 is an NPN switching transistor produced by NXP USA Inc. (now known as Nexperia). This transistor is designed for general-purpose and low-voltage applications, particularly in industrial and consumer switching environments. It is packaged in a small SOT23 surface-mounted device (SMD) plastic package, making it suitable for compact and efficient circuit designs.

Key Specifications

Parameter Conditions Min. Max. Unit
VCBO (Collector-Base Voltage) Open Emitter - 60 V
VCEO (Collector-Emitter Voltage) Open Base - 40 V
VEBO (Emitter-Base Voltage) Open Collector - 6 V
IC (Collector Current, DC) - - 600 mA
ICM (Peak Collector Current) - - 800 mA
IBM (Peak Base Current) - - 200 mA
Ptot (Total Power Dissipation) Tamb ≤ 25 °C - 250 mW
Tstg (Storage Temperature) - -65 +150 °C
Tj (Junction Temperature) - - +150 °C
Tamb (Operating Ambient Temperature) - -65 +150 °C
hFE (DC Current Gain) VCE = 1 V, IC = 0.1 mA 20 - -
VCEsat (Collector-Emitter Saturation Voltage) IC = 150 mA, IB = 15 mA - 400 mV
VBEsat (Base-Emitter Saturation Voltage) IC = 150 mA, IB = 15 mA - 950 mV
ton (Turn-On Time) ICon = 150 mA, IBon = 15 mA - 35 ns
toff (Turn-Off Time) ICon = 150 mA, IBon = 15 mA - 250 ns

Key Features

  • High Current Capability: The PMBT4401 can handle a maximum collector current of 600 mA and a peak collector current of 800 mA.
  • Low Voltage Operation: The transistor is designed to operate with a maximum collector-emitter voltage of 40 V.
  • Compact Package: It is packaged in a small SOT23 surface-mounted device (SMD) plastic package, making it ideal for space-constrained applications.
  • Fast Switching Times: The transistor features fast switching times, including a turn-on time of 35 ns and a turn-off time of 250 ns.
  • High DC Current Gain: The hFE (DC current gain) ranges from 20 to 300, depending on the collector current.
  • Low Saturation Voltages: The collector-emitter saturation voltage (VCEsat) and base-emitter saturation voltage (VBEsat) are low, ensuring efficient operation.

Applications

The PMBT4401 is suitable for various industrial and consumer switching applications, including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems (where applicable)
  • General-purpose switching circuits

Q & A

  1. What is the maximum collector current of the PMBT4401?

    The maximum collector current (IC) of the PMBT4401 is 600 mA, with a peak collector current (ICM) of 800 mA.

  2. What is the maximum collector-emitter voltage of the PMBT4401?

    The maximum collector-emitter voltage (VCEO) of the PMBT4401 is 40 V.

  3. In what package is the PMBT4401 available?

    The PMBT4401 is available in a SOT23 surface-mounted device (SMD) plastic package.

  4. What are the typical applications of the PMBT4401?

    The PMBT4401 is used in industrial and consumer switching applications, including industrial control systems, consumer electronics, and general-purpose switching circuits.

  5. What are the turn-on and turn-off times of the PMBT4401?

    The turn-on time (ton) is 35 ns, and the turn-off time (toff) is 250 ns.

  6. What is the DC current gain (hFE) of the PMBT4401?

    The DC current gain (hFE) of the PMBT4401 ranges from 20 to 300, depending on the collector current.

  7. What are the saturation voltages of the PMBT4401?

    The collector-emitter saturation voltage (VCEsat) is up to 400 mV, and the base-emitter saturation voltage (VBEsat) is up to 950 mV).

  8. What is the thermal resistance from junction to ambient for the PMBT4401?

    The thermal resistance from junction to ambient (Rth(j-a)) is 500 K/W).

  9. What is the storage temperature range for the PMBT4401?

    The storage temperature range for the PMBT4401 is from -65°C to +150°C).

  10. Is the PMBT4401 RoHS compliant?

    Yes, the PMBT4401 is RoHS compliant, which means it meets the EU’s Restriction of Hazardous Substances directive).

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
382

Please send RFQ , we will respond immediately.

Same Series
DD44M32S0V3S/AA
DD44M32S0V3S/AA
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BFS20,235
BFS20,235
Nexperia USA Inc.
TRANS NPN 20V 0.025A TO236AB
MMBT3904-7-F
MMBT3904-7-F
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
BC857B-AU_R1_000A1
BC857B-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
NSS60200LT1G
NSS60200LT1G
onsemi
TRANS PNP 60V 2A SOT23-3
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
BC846BQBZ
BC846BQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
DS2003CMX/NOPB
DS2003CMX/NOPB
National Semiconductor
SMALL SIGNAL BIPOLAR TRANSISTOR,
MMBT2222A_D87Z
MMBT2222A_D87Z
onsemi
TRANS NPN 40V 1A SOT23-3
BCX 56-10 E6327
BCX 56-10 E6327
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC857AQBAZ
BC857AQBAZ
Nexperia USA Inc.
BC857AQB/SOT8015/DFN1110D-3

Related Product By Brand

BZX84-C27/LF1VL
BZX84-C27/LF1VL
NXP USA Inc.
DIODE ZENER 27V 250MW TO236AB
BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BC817-25/DG215
BC817-25/DG215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC856BT115
BC856BT115
NXP USA Inc.
TRANS PNP 65V 0.1A SC75
BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
MIMXRT1051CVJ5B
MIMXRT1051CVJ5B
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
FS32K116LAT0MLFR
FS32K116LAT0MLFR
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 48LQFP
TJA1055T/2Z
TJA1055T/2Z
NXP USA Inc.
IC TRANSCEIVER 1/1 14SO
SC16C554DBIA68,518
SC16C554DBIA68,518
NXP USA Inc.
IC UART QUAD 68PLCC
74AHC595PW/AUJ
74AHC595PW/AUJ
NXP USA Inc.
IC SHIFT REGISTER 8BIT 16-TSSOP
MMPF0200NPAZES
MMPF0200NPAZES
NXP USA Inc.
IC REG CONV I.MX6 11OUT 56QFN
MPX53GP
MPX53GP
NXP USA Inc.
SENSOR GAUGE PRESSURE 7 PSI MAX