PDTA114EM/L315
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NXP USA Inc. PDTA114EM/L315

Manufacturer No:
PDTA114EM/L315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The PDTA114EM/L315 is a 50 V, 100 mA PNP resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. This component is designed to simplify circuit design and reduce component count, making it an efficient choice for various electronic applications. It is packaged in a leadless ultra-small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package, which is AEC-Q101 qualified, ensuring reliability in automotive and industrial environments.

Key Specifications

ParameterValue
Type numberPDTA114EM
PackageSOT883 (DFN1006-3)
Channel typePNP
VCEO (V)50
IC [max] (mA)100
Ptot (mW)250
R1 (typ) (kΩ)10
R2 (typ) (kΩ)10
Size (mm)1 x 0.6 x 0.48

Key Features

  • 100 mA output current capability
  • Built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ)
  • Simplifies circuit design
  • Reduces component count and pick and place costs
  • AEC-Q101 qualified for reliability in automotive and industrial applications
  • Cost-saving alternative for BC847 series in digital applications

Applications

The PDTA114EM/L315 is suitable for a variety of applications, including:

  • Digital applications in automotive and industrial segments
  • Controlling IC inputs
  • Switching loads

Q & A

  1. What is the maximum output current of the PDTA114EM/L315?
    The maximum output current is 100 mA.
  2. What type of package does the PDTA114EM/L315 use?
    The component is packaged in a leadless ultra-small SOT883 (SC-101) SMD plastic package.
  3. Is the PDTA114EM/L315 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  4. What are the built-in resistor values of the PDTA114EM/L315?
    The built-in resistors are R1 = 10 kΩ and R2 = 10 kΩ.
  5. What are the primary applications of the PDTA114EM/L315?
    It is used in digital applications in automotive and industrial segments, controlling IC inputs, and switching loads.
  6. How does the PDTA114EM/L315 simplify circuit design?
    It simplifies circuit design by reducing the component count and integrating bias resistors.
  7. What is the maximum collector-emitter voltage (VCEO) of the PDTA114EM/L315?
    The maximum collector-emitter voltage is 50 V.
  8. What is the total power dissipation (Ptot) of the PDTA114EM/L315?
    The total power dissipation is 250 mW.
  9. Can the PDTA114EM/L315 be used as a replacement for other transistors?
    Yes, it can be used as a cost-saving alternative for the BC847 series in digital applications.
  10. Where can I purchase the PDTA114EM/L315?
    You can purchase it from various distributors such as Digi-Key, Mouser, and directly from Nexperia’s sales organization.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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