BYC10X-600P127
  • Share:

NXP USA Inc. BYC10X-600P127

Manufacturer No:
BYC10X-600P127
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
HYPERFAST RECTIFIER DIODE TO 22
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC10X-600P127 is a hyperfast rectifier diode manufactured by NXP USA Inc. This component is designed for high-performance applications requiring fast switching times and low forward voltage drop. The diode is housed in a TO-220F package, which is a plastic single-ended package with an isolated heatsink mount and a 2-lead configuration. This packaging ensures efficient heat dissipation and ease of mounting. The BYC10X-600P127 is RoHS compliant and lead-free, making it suitable for use in a wide range of modern electronic systems.

Key Specifications

Parameter Conditions Min Typ Max Unit
VRRM (Repetitive Peak Reverse Voltage) - - 600 V
VRWM (Crest Working Reverse Voltage) - - 600 V
IF(AV) (Average Forward Current) Square waveform; δ = 0.5; Th ≤ 37 °C - - 10 A
IFRM (Repetitive Peak Forward Current) Square waveform; δ = 0.5; Th ≤ 37 °C - - 20 A
IFSM (Non-Repetitive Peak Forward Current) t = 10 ms; sinusoidal waveform - - 91 A
Tstg (Storage Temperature) - -40 +150 °C
Tj (Junction Temperature) - - 150 °C
VF (Forward Voltage) IF = 10 A; Tj = 150 °C - 1.32 2.03 V
trr (Reverse Recovery Time) IF = 10 A to VR = 400 V; dIF/dt = 500 A/µs; Tj = 100 °C - 32 40 ns

Key Features

  • Hyperfast Recovery Time: The BYC10X-600P127 features a fast reverse recovery time, typically 32-40 ns at Tj = 100 °C, making it suitable for high-frequency applications.
  • High Forward Current Capability: The diode can handle an average forward current of up to 10 A and a repetitive peak forward current of up to 20 A.
  • Low Forward Voltage Drop: The forward voltage drop is typically 1.32 V at IF = 10 A and Tj = 150 °C, reducing power losses in the system.
  • High Reverse Voltage Rating: With a repetitive peak reverse voltage of 600 V, this diode is robust against reverse voltage spikes.
  • Thermal Performance: The TO-220F package provides good thermal dissipation with a thermal resistance from junction to heatsink (Rth(j-h)) of 4.8 K/W with heatsink compound.
  • RoHS Compliance: The BYC10X-600P127 is lead-free and RoHS compliant, ensuring environmental sustainability.

Applications

  • Power Supplies: Suitable for use in switching power supplies, DC-DC converters, and AC-DC converters due to its fast recovery time and high current handling.
  • Motor Control: Used in motor control circuits where fast switching and low power losses are critical.
  • High-Frequency Inverters: Ideal for high-frequency inverter applications requiring fast recovery diodes.
  • Renewable Energy Systems: Can be used in solar and wind power systems to improve efficiency and reliability.

Q & A

  1. Q: What is the maximum repetitive peak reverse voltage of the BYC10X-600P127?
    A: The maximum repetitive peak reverse voltage is 600 V.
  2. Q: What is the typical forward voltage drop at 10 A and Tj = 150 °C?
    A: The typical forward voltage drop is 1.32 V.
  3. Q: What is the thermal resistance from junction to heatsink (Rth(j-h)) with heatsink compound?
    A: The thermal resistance from junction to heatsink (Rth(j-h)) is 4.8 K/W with heatsink compound.
  4. Q: Is the BYC10X-600P127 RoHS compliant?
    A: Yes, the BYC10X-600P127 is lead-free and RoHS compliant.
  5. Q: What is the maximum junction temperature for the BYC10X-600P127?
    A: The maximum junction temperature is 150 °C.
  6. Q: What is the typical reverse recovery time at IF = 10 A to VR = 400 V and Tj = 100 °C?
    A: The typical reverse recovery time is 32-40 ns.
  7. Q: What is the package type of the BYC10X-600P127?
    A: The package type is TO-220F.
  8. Q: What are some common applications of the BYC10X-600P127?
    A: Common applications include power supplies, motor control, high-frequency inverters, and renewable energy systems.
  9. Q: What is the maximum non-repetitive peak forward current for a 10 ms sinusoidal waveform?
    A: The maximum non-repetitive peak forward current is 91 A.
  10. Q: How does the BYC10X-600P127 handle thermal stress?
    A: The diode is designed with good thermal dissipation characteristics, including a thermal resistance from junction to ambient of 60 K/W in free air.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

-
296

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32S0T2X/AA
DD44S32S0T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL

Related Product By Brand

BAT54S/6215
BAT54S/6215
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS216,115
BAS216,115
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
PMBT3904/8,215
PMBT3904/8,215
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB
SAF4000EL/101S500Y
SAF4000EL/101S500Y
NXP USA Inc.
SOFTWARE DEFINED RADIO
MK10DX128VLH7
MK10DX128VLH7
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
P89LPC954FBD48,151
P89LPC954FBD48,151
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 48LQFP
SC18IS600IPW/S8HP
SC18IS600IPW/S8HP
NXP USA Inc.
IC I2C CONTROLLER SPI 16TSSOP
TJA1021T/20/C,118
TJA1021T/20/C,118
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
BAS21SW115
BAS21SW115
NXP USA Inc.
NOW NEXPERIA BAS21SW - RECTIFIER
BZX84J-C30115
BZX84J-C30115
NXP USA Inc.
NOW NEXPERIA BZX84J-C2V7 - ZENER
MC56F82723VLC557
MC56F82723VLC557
NXP USA Inc.
MICROCONTROLLER, 32-BIT, FLASH,