BUK7635-55A118
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NXP USA Inc. BUK7635-55A118

Manufacturer No:
BUK7635-55A118
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA BUK7635-55A 35A, 55
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BUK7635-55A118 is an N-channel TrenchMOS standard level FET manufactured by NXP USA Inc. (now known as Nexperia). This power MOSFET is designed for high-performance applications requiring low on-resistance and high current handling capabilities. Although the component is currently obsolete and no longer manufactured, it remains relevant for legacy systems and maintenance purposes.

Key Specifications

Parameter Value
Vds - Drain-Source Breakdown Voltage 55 V
Id - Continuous Drain Current 35 A
Rds On - Drain-Source Resistance 35 mOhms
Vgs - Gate-Source Voltage ±20 V

Key Features

  • Low On-Resistance: The BUK7635-55A118 features a low Rds On of 35 mOhms, which minimizes power losses and enhances efficiency in high-current applications.
  • High Continuous Drain Current: With a continuous drain current of 35 A, this MOSFET is suitable for demanding applications requiring high current handling.
  • High Drain-Source Breakdown Voltage: The component has a drain-source breakdown voltage of 55 V, ensuring robust performance under various operating conditions.
  • TrenchMOS Technology: Utilizes TrenchMOS technology for improved performance, including lower on-resistance and faster switching times.

Applications

  • Power Supplies: Suitable for use in high-power DC-DC converters and power supplies due to its high current and low on-resistance characteristics.
  • Motor Control: Can be used in motor control applications such as motor drives and servo motors where high current and efficiency are required.
  • Industrial Automation: Applicable in various industrial automation systems that demand reliable and efficient power management.
  • Automotive Systems: Used in automotive systems for applications such as battery management, power steering, and other high-current requirements.

Q & A

  1. What is the continuous drain current of the BUK7635-55A118?

    The continuous drain current is 35 A.

  2. What is the drain-source breakdown voltage of this MOSFET?

    The drain-source breakdown voltage is 55 V.

  3. What is the typical on-resistance (Rds On) of the BUK7635-55A118?

    The typical on-resistance is 35 mOhms.

  4. Is the BUK7635-55A118 still in production?

    No, the BUK7635-55A118 is obsolete and no longer manufactured.

  5. What technology does this MOSFET use?

    This MOSFET uses TrenchMOS technology.

  6. What are some common applications for the BUK7635-55A118?

    Common applications include power supplies, motor control, industrial automation, and automotive systems.

  7. What is the gate-source voltage range for this MOSFET?

    The gate-source voltage range is ±20 V.

  8. Who is the manufacturer of the BUK7635-55A118?

    The manufacturer is NXP USA Inc. (now known as Nexperia).

  9. Where can I find detailed specifications for the BUK7635-55A118?

    Detailed specifications can be found in the datasheet available from the manufacturer's website or through distributors like DigiKey and Mouser Electronics.

  10. What are some potential substitutes for the BUK7635-55A118?

    Potential substitutes include other high-current, low on-resistance MOSFETs such as the IRFZ34N.

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