Overview
The BUK9M85-60E is a logic level N-channel MOSFET produced by Nexperia USA Inc. This device is housed in the LFPAK33 (Power33) package and utilizes TrenchMOS technology, known for its high efficiency and reliability. The MOSFET is automotive qualified, making it suitable for a wide range of applications, particularly in the automotive and industrial sectors. It is designed to provide high performance and low on-state resistance, making it an ideal choice for power management and switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Type number | BUK9M85-60E |
| Package | LFPAK33 (SOT1210) |
| Channel type | N-channel |
| VDS [max] | 60 V |
| RDSon [max] @ VGS = 10 V | 73 mΩ |
| RDSon [max] @ VGS = 5 V | 85 mΩ |
| Tj [max] | 175 °C |
| ID [max] | 12.8 A |
| Ptot [max] | 31 W |
| QGD [typ] | 2 nC |
| Qr [typ] | 10.8 nC |
| VGSth [typ] | 1.7 V |
| Automotive qualified | Yes |
| Ciss [typ] | 326 pF |
| Coss [typ] | 46 pF |
Key Features
- Logic level N-channel MOSFET with low on-state resistance (RDSon) of 73 mΩ at VGS = 10 V and 85 mΩ at VGS = 5 V.
- High current capability of up to 12.8 A.
- Maximum drain-source voltage (VDS) of 60 V.
- Maximum junction temperature (Tj) of 175 °C.
- Automotive qualified, ensuring reliability in demanding automotive applications.
- LFPAK33 (Power33) package, which offers a compact footprint and excellent thermal performance.
- Utilizes TrenchMOS technology for enhanced efficiency and performance.
Applications
The BUK9M85-60E MOSFET is versatile and can be used in a variety of applications, including:
- Automotive systems: Suitable for use in automotive power management, motor control, and other high-reliability applications.
- Industrial power management: Ideal for industrial power supplies, motor drives, and other high-current applications.
- Power supplies: Used in switch-mode power supplies, DC-DC converters, and other power management circuits.
- Consumer electronics: Can be used in high-performance consumer electronics requiring efficient power management.
Q & A
- What is the maximum drain-source voltage (VDS) of the BUK9M85-60E MOSFET?
The maximum drain-source voltage (VDS) is 60 V. - What is the on-state resistance (RDSon) at VGS = 10 V?
The on-state resistance (RDSon) at VGS = 10 V is 73 mΩ. - What is the maximum current (ID) rating of the BUK9M85-60E?
The maximum current (ID) rating is 12.8 A. - Is the BUK9M85-60E MOSFET automotive qualified?
Yes, the BUK9M85-60E is automotive qualified. - What package type is used for the BUK9M85-60E?
The BUK9M85-60E is housed in the LFPAK33 (Power33) package. - What technology is used in the BUK9M85-60E MOSFET?
The BUK9M85-60E uses TrenchMOS technology. - What is the maximum junction temperature (Tj) of the BUK9M85-60E?
The maximum junction temperature (Tj) is 175 °C. - What are some typical applications for the BUK9M85-60E MOSFET?
Typical applications include automotive systems, industrial power management, power supplies, and consumer electronics. - How can I obtain the datasheet for the BUK9M85-60E?
The datasheet can be obtained from the Nexperia website or through authorized distributors like Digi-Key and Mouser. - Is the BUK9M85-60E available for sampling?
Yes, samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.
