Overview
The BLF6G10LS-135RN is a 135 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed for base station applications, particularly in the frequency range of 700 MHz to 1000 MHz. This transistor is part of the RF power transistor family from Ampleon (previously part of NXP Semiconductors). It is known for its high efficiency, ruggedness, and ease of use, making it suitable for various wireless communication systems.
Key Specifications
| Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|
| f range | - | 700 | - | 1000 | MHz |
| P L(3dB) | - | - | 135 | - | W |
| G p | P L(AV) = 26.5 W; V DS = 28 V | 20 | 21 | - | dB |
| RL in | P L(AV) = 26.5 W; V DS = 28 V; I Dq = 950 mA | -10 | -6.5 | - | dB |
| η D | P L(AV) = 26.5 W; V DS = 28 V; 869 MHz < f < 894 MHz; I Dq = 950 mA | 26 | 28 | - | % |
| P L(AV) | - | - | 26.5 | - | W |
| ACPR | P L(AV) = 26.5 W; V DS = 28 V; 869 MHz < f < 894 MHz; I Dq = 950 mA | -39 | -36.5 | - | dBc |
| V DS | - | - | 28 | - | V |
| I Dq | - | - | 950 | - | mA |
| Package | - | - | SOT502B | - | - |
Key Features
- Easy power control
- Integrated ESD protection
- Enhanced ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (700 MHz to 1000 MHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding RoHS
Applications
- RF power amplifiers for GSM, GSM EDGE, W-CDMA, and CDMA base stations
- Multi-carrier applications in the 700 MHz to 1000 MHz frequency range
Q & A
- What is the frequency range of the BLF6G10LS-135RN transistor?
The frequency range is from 700 MHz to 1000 MHz. - What is the nominal output power at 3 dB gain compression?
The nominal output power at 3 dB gain compression is 135 W. - What is the typical power gain of the transistor?
The typical power gain is 21 dB. - What is the typical drain efficiency of the transistor?
The typical drain efficiency is 28%. - What is the supply voltage for the transistor?
The supply voltage is 28 V. - What is the typical quiescent drain current?
The typical quiescent drain current is 950 mA. - What package type is used for the BLF6G10LS-135RN?
The package type is SOT502B. - Is the BLF6G10LS-135RN compliant with RoHS?
Yes, it is compliant to Directive 2002/95/EC, regarding RoHS. - What are the primary applications of the BLF6G10LS-135RN transistor?
The primary applications include RF power amplifiers for GSM, GSM EDGE, W-CDMA, and CDMA base stations, and multi-carrier applications in the 700 MHz to 1000 MHz frequency range. - Has the BLF6G10LS-135RN been discontinued?
Yes, the BLF6G10LS-135RN has been discontinued.
