Overview
The BC857QASX is a general-purpose PNP bipolar junction transistor (BJT) manufactured by NXP USA Inc. This transistor is part of the BC857 series, known for its reliability and versatility in various electronic applications. It is designed to operate within a wide range of temperatures and voltage conditions, making it suitable for a broad spectrum of uses.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage (VCBO) | Open Emitter | - | - | -50 | V |
| Collector-Emitter Voltage (VCEO) | Open Base | - | - | -45 | V |
| Emitter-Base Voltage (VEBO) | Open Collector | - | - | -6 | V |
| Collector Current (IC) | - | - | - | -100 | mA |
| Peak Collector Current (ICM) | - | - | - | -200 | mA |
| Peak Base Current (IBM) | Single pulse; tp ≤ 1 ms | - | - | -100 | mA |
| Total Power Dissipation (Ptot) per transistor | Tamb ≤ 25 °C | - | - | -230 | mW |
| Total Power Dissipation (Ptot) per device | Tamb ≤ 25 °C | - | - | -350 | mW |
| Junction Temperature (Tj) | - | - | - | 150 | °C |
| Ambient Temperature (Tamb) | - | -55 | - | 150 | °C |
| Storage Temperature (Tstg) | - | -65 | - | 150 | °C |
| DC Current Gain (hFE) | VCE = -5 V; IC = -2 mA; Tamb = 25 °C | 200 | - | 450 | - |
Key Features
- General-Purpose Transistor: Suitable for a wide range of applications due to its versatile characteristics.
- High Voltage and Current Handling: Can handle up to 45 V and 100 mA, making it robust for various uses.
- Wide Temperature Range: Operates from -55°C to 150°C, ensuring reliability in diverse environmental conditions.
- Low Power Dissipation: Total power dissipation of up to 350 mW per device, which is efficient for many applications.
- High DC Current Gain: hFE ranges from 200 to 450, indicating good amplification capabilities.
Applications
The BC857QASX transistor is widely used in various electronic circuits, including:
- Amplifier Circuits: Due to its high DC current gain, it is suitable for amplifier applications.
- Switching Circuits: Its ability to handle high voltages and currents makes it ideal for switching applications.
- General-Purpose Electronics: Used in a variety of general-purpose electronic devices where reliability and versatility are crucial.
- Automotive and Industrial Electronics: Its wide temperature range and robust characteristics make it suitable for use in automotive and industrial environments.
Q & A
- What is the maximum collector-base voltage of the BC857QASX transistor?
The maximum collector-base voltage (VCBO) is -50 V. - What is the maximum collector current of the BC857QASX transistor?
The maximum collector current (IC) is -100 mA. - What is the typical DC current gain (hFE) of the BC857QASX transistor?
The typical DC current gain (hFE) ranges from 200 to 450. - What is the operating temperature range of the BC857QASX transistor?
The operating temperature range is from -55°C to 150°C. - What is the total power dissipation per device for the BC857QASX transistor?
The total power dissipation per device is up to 350 mW. - What are some common applications of the BC857QASX transistor?
It is commonly used in amplifier circuits, switching circuits, general-purpose electronics, and in automotive and industrial electronics. - What is the peak collector current (ICM) of the BC857QASX transistor?
The peak collector current (ICM) is -200 mA. - What is the peak base current (IBM) of the BC857QASX transistor?
The peak base current (IBM) is -100 mA for a single pulse with tp ≤ 1 ms. - What is the storage temperature range for the BC857QASX transistor?
The storage temperature range is from -65°C to 150°C. - Who manufactures the BC857QASX transistor?
The BC857QASX transistor is manufactured by NXP USA Inc.
