Overview
The BC857B/DG/B3215 is a PNP general-purpose transistor manufactured by NXP USA Inc. This transistor is part of the BC857 series and is known for its versatility in various electronic applications. It is packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for space-constrained designs. The BC857B is designed for low current (up to 100 mA) and low voltage (up to 65 V) applications, making it ideal for general-purpose switching and amplification.
Key Specifications
| Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|
| Collector-Base Breakdown Voltage (VBRCBO) | -80 | - | -50 | V |
| Collector-Emitter Breakdown Voltage (VBRCEO) | -65 | - | -45 | V |
| Emitter-Base Breakdown Voltage (VBREBO) | -5.0 | - | -5.0 | V |
| Collector Cutoff Current (ICBO) | - | - | 15 nA | A |
| DC Current Gain (hFE) | 220 | - | 475 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | -0.3 | - | -0.65 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | -0.7 | - | -0.9 | V |
| Maximum Collector Current (IC) | - | - | 100 mA | A |
| Maximum Junction Temperature (TJ) | - | - | 150 °C | °C |
| Transition Frequency (fT) | - | - | 100 MHz | MHz |
Key Features
- General-purpose switching and amplification: Suitable for a wide range of applications requiring low current and low voltage.
- Small SOT23 package: Compact surface-mounted device (SMD) package, ideal for space-constrained designs.
- High DC current gain: hFE ranges from 220 to 475, ensuring reliable amplification.
- Low saturation voltages: VCE(sat) and VBE(sat) are minimized for efficient operation.
- Automotive qualified: Meets AEC-Q101 standards, suitable for automotive and other demanding applications.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
- Industrial control: Used in industrial control circuits for switching and amplification.
- Consumer electronics: Found in consumer devices requiring general-purpose transistors.
- Power management: Can be used in power management circuits for voltage regulation and load switching.
- LED lighting and motor drive: Used in LED lighting and motor drive applications due to its low VCE(sat) and high current gain.
Q & A
- What is the maximum collector current of the BC857B transistor?
The maximum collector current is 100 mA. - What is the package type of the BC857B transistor?
The BC857B is packaged in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. - What is the maximum junction temperature of the BC857B transistor?
The maximum junction temperature is 150 °C. - What is the typical DC current gain (hFE) of the BC857B transistor?
The typical DC current gain (hFE) ranges from 220 to 475. - Is the BC857B transistor automotive qualified?
Yes, the BC857B meets AEC-Q101 standards and is suitable for automotive applications. - What are the common applications of the BC857B transistor?
The BC857B is used in automotive systems, industrial control, consumer electronics, power management, LED lighting, and motor drive applications. - What is the collector-emitter breakdown voltage (VBRCEO) of the BC857B transistor?
The collector-emitter breakdown voltage (VBRCEO) is -65 V to -45 V. - What is the transition frequency (fT) of the BC857B transistor?
The transition frequency (fT) is 100 MHz. - Is the BC857B transistor RoHS compliant?
Yes, the BC857B is RoHS compliant. - Where can I find detailed specifications and datasheets for the BC857B transistor?
Detailed specifications and datasheets can be found on the official NXP website or through authorized distributors like Nexperia and Onsemi.
