BC857B/DG/B3215
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NXP USA Inc. BC857B/DG/B3215

Manufacturer No:
BC857B/DG/B3215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
TRANS PNP 45V 0.1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857B/DG/B3215 is a PNP general-purpose transistor manufactured by NXP USA Inc. This transistor is part of the BC857 series and is known for its versatility in various electronic applications. It is packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for space-constrained designs. The BC857B is designed for low current (up to 100 mA) and low voltage (up to 65 V) applications, making it ideal for general-purpose switching and amplification.

Key Specifications

ParameterMinTypMaxUnit
Collector-Base Breakdown Voltage (VBRCBO)-80--50V
Collector-Emitter Breakdown Voltage (VBRCEO)-65--45V
Emitter-Base Breakdown Voltage (VBREBO)-5.0--5.0V
Collector Cutoff Current (ICBO)--15 nAA
DC Current Gain (hFE)220-475-
Collector-Emitter Saturation Voltage (VCE(sat))-0.3--0.65V
Base-Emitter Saturation Voltage (VBE(sat))-0.7--0.9V
Maximum Collector Current (IC)--100 mAA
Maximum Junction Temperature (TJ)--150 °C°C
Transition Frequency (fT)--100 MHzMHz

Key Features

  • General-purpose switching and amplification: Suitable for a wide range of applications requiring low current and low voltage.
  • Small SOT23 package: Compact surface-mounted device (SMD) package, ideal for space-constrained designs.
  • High DC current gain: hFE ranges from 220 to 475, ensuring reliable amplification.
  • Low saturation voltages: VCE(sat) and VBE(sat) are minimized for efficient operation.
  • Automotive qualified: Meets AEC-Q101 standards, suitable for automotive and other demanding applications.

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial control: Used in industrial control circuits for switching and amplification.
  • Consumer electronics: Found in consumer devices requiring general-purpose transistors.
  • Power management: Can be used in power management circuits for voltage regulation and load switching.
  • LED lighting and motor drive: Used in LED lighting and motor drive applications due to its low VCE(sat) and high current gain.

Q & A

  1. What is the maximum collector current of the BC857B transistor?
    The maximum collector current is 100 mA.
  2. What is the package type of the BC857B transistor?
    The BC857B is packaged in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
  3. What is the maximum junction temperature of the BC857B transistor?
    The maximum junction temperature is 150 °C.
  4. What is the typical DC current gain (hFE) of the BC857B transistor?
    The typical DC current gain (hFE) ranges from 220 to 475.
  5. Is the BC857B transistor automotive qualified?
    Yes, the BC857B meets AEC-Q101 standards and is suitable for automotive applications.
  6. What are the common applications of the BC857B transistor?
    The BC857B is used in automotive systems, industrial control, consumer electronics, power management, LED lighting, and motor drive applications.
  7. What is the collector-emitter breakdown voltage (VBRCEO) of the BC857B transistor?
    The collector-emitter breakdown voltage (VBRCEO) is -65 V to -45 V.
  8. What is the transition frequency (fT) of the BC857B transistor?
    The transition frequency (fT) is 100 MHz.
  9. Is the BC857B transistor RoHS compliant?
    Yes, the BC857B is RoHS compliant.
  10. Where can I find detailed specifications and datasheets for the BC857B transistor?
    Detailed specifications and datasheets can be found on the official NXP website or through authorized distributors like Nexperia and Onsemi.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number BC857B/DG/B3215 BC857B/DG/B3,215
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 250 mW 250 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

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