BC847CW/DG/B2115
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NXP USA Inc. BC847CW/DG/B2115

Manufacturer No:
BC847CW/DG/B2115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
TRANS NPN 45V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CW/DG/B2115 is a general-purpose NPN bipolar junction transistor (BJT) produced by NXP USA Inc. This transistor is designed for a wide range of applications requiring low to medium power amplification and switching. It is packaged in a small SOT323 (SC-70) surface-mount device (SMD) plastic package, making it suitable for compact and high-density electronic designs.

Key Specifications

ParameterValueUnit
Transistor TypeNPN-
Voltage - Collector Emitter Breakdown (Max)45V
Current - Collector (Ic) (Max)100mA
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mAmV
Current - Collector Cutoff (Max)15nA (ICBO)nA
DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA, 5V-
Power - Max200mW
Frequency - Transition100MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount-
Package / CaseSOT323 (SC-70)-

Key Features

  • Compact Package: The BC847CW/DG/B2115 is packaged in a small SOT323 (SC-70) surface-mount device, ideal for space-constrained designs.
  • High DC Current Gain: With a minimum DC current gain (hFE) of 420 at 2mA and 5V, this transistor offers reliable amplification.
  • Low Saturation Voltage: The transistor has a low Vce saturation voltage of 400mV at 5mA and 100mA, reducing power losses.
  • High Operating Temperature: It can operate up to a junction temperature of 150°C, making it suitable for a variety of environmental conditions.
  • Compliance with Regulations: The transistor is compliant with EU RoHS, CN RoHS, and other environmental regulations, ensuring it is safe for use in various applications.

Applications

The BC847CW/DG/B2115 is a versatile transistor suitable for a wide range of applications, including:

  • General-purpose amplification and switching: Ideal for use in audio amplifiers, power supplies, and other electronic circuits requiring low to medium power amplification.
  • Automotive electronics: Qualified to AEC-Q101 standards, making it suitable for use in automotive systems.
  • Consumer electronics: Used in various consumer electronic devices such as TVs, radios, and other household appliances.
  • Industrial control systems: Can be used in industrial control circuits, sensors, and actuators.

Q & A

  1. What is the maximum collector-emitter voltage of the BC847CW/DG/B2115 transistor?
    The maximum collector-emitter voltage is 45V.
  2. What is the maximum collector current of the BC847CW/DG/B2115 transistor?
    The maximum collector current is 100mA.
  3. What is the typical DC current gain (hFE) of the BC847CW/DG/B2115 transistor?
    The typical DC current gain (hFE) is 420 at 2mA and 5V.
  4. What is the operating temperature range of the BC847CW/DG/B2115 transistor?
    The operating temperature range is up to 150°C (TJ).
  5. Is the BC847CW/DG/B2115 transistor RoHS compliant?
    Yes, the transistor is compliant with EU RoHS, CN RoHS, and other environmental regulations.
  6. What is the package type of the BC847CW/DG/B2115 transistor?
    The package type is SOT323 (SC-70).
  7. What is the maximum power dissipation of the BC847CW/DG/B2115 transistor?
    The maximum power dissipation is 200mW.
  8. Is the BC847CW/DG/B2115 transistor suitable for automotive applications?
    Yes, it is qualified to AEC-Q101 standards, making it suitable for automotive use.
  9. What is the transition frequency of the BC847CW/DG/B2115 transistor?
    The transition frequency is 100MHz.
  10. What are the compliance standards for the BC847CW/DG/B2115 transistor?
    The transistor complies with EU RoHS, CN RoHS, and other environmental regulations, and does not contain REACH SVHC substances exceeding 1000 ppm.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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Similar Products

Part Number BC847CW/DG/B2115 BC847CW/DG/B2,115
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 200 mW 200 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SOT-323 SOT-323

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