Overview
The BC847BW/MI115 is a 45 V, 100 mA NPN general-purpose transistor manufactured by NXP USA Inc. This transistor is packaged in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, making it ideal for space-constrained applications. It is part of a family of transistors that offer different gain selections, ensuring versatility in various electronic designs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Package | SOT323 (SC-70) | - |
| Channel Type | NPN | - |
| Collector-Emitter Voltage (VCEO) | 45 | V |
| Continuous Collector Current (IC) | 100 | mA |
| Peak Collector Current (ICM) | 200 | mA |
| DC Current Gain (hFE) | 200 - 450 | - |
| Emitter-Base Breakdown Voltage (VEB0) | 6 | V |
| Power Dissipation (PD) | 200 | mW |
| Thermal Resistance, Junction to Ambient (RθJA) | 625 | °C/W |
| Operating and Storage Temperature Range | -65 to +150 | °C |
Key Features
- Ideally suited for automatic insertion.
- Complementary PNP types: BC857W.
- Totally lead-free and fully RoHS compliant.
- Halogen and antimony free, making it a 'green' device.
- Suitable for switching and AF amplifier applications.
- Small SOT323 (SC-70) package, enhancing space efficiency.
- High DC current gain with a range of 200 to 450.
Applications
The BC847BW/MI115 transistor is versatile and can be used in a variety of applications, including:
- Switching circuits.
- Audio Frequency (AF) amplifiers.
- Automotive applications requiring specific change control and qualified to AEC-Q100/101/104/200 standards.
- General-purpose electronic designs in consumer, mobile, and industrial sectors.
Q & A
- What is the package type of the BC847BW/MI115 transistor?
The BC847BW/MI115 transistor is packaged in a SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
- What is the maximum collector-emitter voltage (VCEO) of the BC847BW/MI115 transistor?
The maximum collector-emitter voltage (VCEO) is 45 V.
- What is the continuous collector current (IC) of the BC847BW/MI115 transistor?
The continuous collector current (IC) is 100 mA.
- What is the DC current gain (hFE) range of the BC847BW/MI115 transistor?
The DC current gain (hFE) range is from 200 to 450.
- Is the BC847BW/MI115 transistor RoHS compliant?
Yes, the BC847BW/MI115 transistor is totally lead-free and fully RoHS compliant.
- What are the operating and storage temperature ranges for the BC847BW/MI115 transistor?
The operating and storage temperature ranges are from -65 to +150 °C.
- Can the BC847BW/MI115 transistor be used in automotive applications?
Yes, it is suitable for automotive applications requiring specific change control and is qualified to AEC-Q100/101/104/200 standards.
- What are the complementary PNP types for the BC847BW/MI115 transistor?
The complementary PNP types are BC857W.
- Is the BC847BW/MI115 transistor suitable for automatic insertion?
Yes, it is ideally suited for automatic insertion.
- What is the thermal resistance, junction to ambient (RθJA), of the BC847BW/MI115 transistor?
The thermal resistance, junction to ambient (RθJA), is 625 °C/W.
