BC846BW/DG/B2135
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NXP USA Inc. BC846BW/DG/B2135

Manufacturer No:
BC846BW/DG/B2135
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
TRANS NPN 65V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC846BW/DG/B2135 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by NXP USA Inc. This transistor is designed for a wide range of applications, including switching and amplification, due to its versatile characteristics. It is packaged in a small SOT323 (SC-70) surface-mounted device (SMD) plastic package, making it suitable for compact and high-density electronic designs.

Key Specifications

Parameter Value
Manufacturer NXP USA Inc.
Package SOT323 (SC-70)
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V
Vce Saturation (Max) @ Ib, Ic 400 mV @ 5 mA, 100 mA
Current - Collector Cutoff (Max) 15 nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2 mA, 5 V
Power - Max 200 mW
Frequency - Transition 100 MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Key Features

  • General-purpose NPN bipolar junction transistor suitable for switching and amplification.
  • Compact SOT323 (SC-70) surface-mounted device (SMD) plastic package.
  • High collector-emitter voltage of 65 V and collector current of 100 mA.
  • Low Vce saturation voltage of 400 mV at 5 mA and 100 mA collector current.
  • High DC current gain (hFE) of 200 at 2 mA and 5 V.
  • Maximum power dissipation of 200 mW.
  • Transition frequency of 100 MHz.
  • Wide operating temperature range from -55°C to 150°C.
  • AEC-Q101 qualified for automotive applications.

Applications

The BC846BW/DG/B2135 is versatile and can be used in a variety of applications across different industries, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Industrial control systems: For general-purpose switching and amplification tasks.
  • Consumer electronics: In devices such as audio amplifiers, power supplies, and other general-purpose electronic circuits.
  • Mobile and wearable devices: Where compact size and high performance are required.

Q & A

  1. What is the package type of the BC846BW/DG/B2135 transistor?

    The BC846BW/DG/B2135 transistor is packaged in a SOT323 (SC-70) surface-mounted device (SMD) plastic package.

  2. What is the maximum collector current of the BC846BW/DG/B2135 transistor?

    The maximum collector current is 100 mA.

  3. What is the maximum collector-emitter voltage of the BC846BW/DG/B2135 transistor?

    The maximum collector-emitter voltage is 65 V.

  4. What is the transition frequency of the BC846BW/DG/B2135 transistor?

    The transition frequency is 100 MHz.

  5. What is the operating temperature range of the BC846BW/DG/B2135 transistor?

    The operating temperature range is from -55°C to 150°C.

  6. Is the BC846BW/DG/B2135 transistor AEC-Q101 qualified?

    Yes, the BC846BW/DG/B2135 transistor is AEC-Q101 qualified for automotive applications.

  7. What is the maximum power dissipation of the BC846BW/DG/B2135 transistor?

    The maximum power dissipation is 200 mW.

  8. What is the DC current gain (hFE) of the BC846BW/DG/B2135 transistor?

    The DC current gain (hFE) is 200 at 2 mA and 5 V.

  9. What are some common applications of the BC846BW/DG/B2135 transistor?

    Common applications include automotive systems, industrial control systems, consumer electronics, and mobile and wearable devices.

  10. How can I obtain the datasheet for the BC846BW/DG/B2135 transistor?

    The datasheet can be obtained from the official NXP website or through authorized distributors.

  11. Can I order samples of the BC846BW/DG/B2135 transistor?

    Yes, samples can be ordered via NXP's sales organization or through their network of global and regional distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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Similar Products

Part Number BC846BW/DG/B2135 BC846BW/DG/B2,135 BC846BW/DG/B2115
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Obsolete Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 200 mW 200 mW 200 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SOT-323 SOT-323 SOT-323

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