BAT720/DG/B2,215
  • Share:

NXP USA Inc. BAT720/DG/B2,215

Manufacturer No:
BAT720/DG/B2,215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
RECTIFIER DIODE, SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT720 is a planar Schottky barrier diode produced by NXP USA Inc., now part of Nexperia. This diode is encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is designed for high-speed switching applications and features an integrated guard ring for stress protection. The BAT720 is suitable for various electronic designs, particularly in automotive and industrial sectors, due to its robust and reliable performance characteristics.

Key Specifications

Parameter Conditions Min Typ Max Unit
Reverse Voltage (VR) - - - 40 V
Forward Current (IF) - - - 500 mA
Non-repetitive Peak Forward Current (IFSM) square wave; tp < 10 ms - - 2 A
Total Power Dissipation (Ptot) Tamb ≤ 25 °C - - 200 mW
Junction Temperature (Tj) - - - 125 °C
Ambient Temperature (Tamb) - -55 - 125 °C
Storage Temperature (Tstg) - -65 - 150 °C
Forward Voltage (VF) IF = 500 mA - - 550 mV
Reverse Current (IR) VR = 35 V; Tj = 25 °C - - 100 µA
Diode Capacitance (Cd) f = 1 MHz; VR = 0 V 60 - 90 pF

Key Features

  • Low Forward Voltage: The BAT720 has a low forward voltage of up to 550 mV at 500 mA, making it efficient for high-speed switching applications.
  • Low Capacitance: With a diode capacitance of 60-90 pF at 1 MHz, it is suitable for high-frequency applications.
  • Ultra High-Speed Switching: Designed for fast switching times, making it ideal for applications requiring quick response times.
  • Voltage Clamping and Line Termination: Can be used for voltage clamping and line termination due to its Schottky barrier characteristics.
  • Reverse Polarity Protection: Offers protection against reverse polarity, enhancing the reliability of the circuit.
  • Integrated Guard Ring: Features an integrated guard ring for stress protection, improving the device's robustness.
  • Automotive Qualified: Qualified according to the Automotive Electronics Council (AEC) standard Q101, making it suitable for automotive applications.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its automotive qualification and robust performance.
  • Industrial Electronics: Used in industrial electronics for high-speed switching, voltage clamping, and line termination.
  • Power Management: Can be used in power management circuits to improve efficiency and reduce power losses.
  • Consumer Electronics: Applicable in consumer electronics for high-frequency and high-speed switching requirements.

Q & A

  1. What is the maximum reverse voltage of the BAT720?

    The maximum reverse voltage (VR) of the BAT720 is 40 V.

  2. What is the maximum forward current of the BAT720?

    The maximum forward current (IF) of the BAT720 is 500 mA.

  3. What is the typical forward voltage of the BAT720 at 500 mA?

    The typical forward voltage (VF) of the BAT720 at 500 mA is up to 550 mV.

  4. What is the diode capacitance of the BAT720 at 1 MHz?

    The diode capacitance (Cd) of the BAT720 at 1 MHz is between 60 and 90 pF.

  5. Is the BAT720 suitable for automotive applications?

    Yes, the BAT720 is qualified according to the Automotive Electronics Council (AEC) standard Q101, making it suitable for automotive applications.

  6. What package type is the BAT720 available in?

    The BAT720 is available in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  7. What are the key features of the BAT720?

    The BAT720 features low forward voltage, low capacitance, ultra high-speed switching, voltage clamping, line termination, and reverse polarity protection.

  8. What is the maximum junction temperature of the BAT720?

    The maximum junction temperature (Tj) of the BAT720 is 125 °C.

  9. What is the storage temperature range of the BAT720?

    The storage temperature range (Tstg) of the BAT720 is from -65 °C to 150 °C.

  10. How can I order samples of the BAT720?

    Samples of the BAT720 can be ordered through Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

$0.06
9,058

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

BZX84-C13/DG/B3215
BZX84-C13/DG/B3215
NXP USA Inc.
DIODE ZENER
BFS17W,135
BFS17W,135
NXP USA Inc.
RF TRANS NPN 15V 1.6GHZ SOT323-3
MKE04Z64VLH4
MKE04Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
MCHC908QT2CDWER
MCHC908QT2CDWER
NXP USA Inc.
IC MCU 8BIT 1.5KB FLASH 8SO
S9S12G48AMLF
S9S12G48AMLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
MKE02Z64VQH4
MKE02Z64VQH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64QFP
S9S12G48ACLF
S9S12G48ACLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
MCIMX7U3DVK07SC
MCIMX7U3DVK07SC
NXP USA Inc.
IC I.MX 7ULP VFBGA 361
TJA1042TK/3/1,118
TJA1042TK/3/1,118
NXP USA Inc.
HIGH-SPEED CAN TRANSCEIVER WITH
74HC2G08DC/C125
74HC2G08DC/C125
NXP USA Inc.
IC GATE AND 2CH 2-INP 8VSSOP
MC34716EP
MC34716EP
NXP USA Inc.
IC REG CONV DDR 2OUT 26QFN
BGU7258X
BGU7258X
NXP USA Inc.
IC RF AMP ISM 5GHZ-6GHZ 6HXSON