Overview
The 2PD601ASW,115 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc., which was previously part of NXP USA Inc. This transistor is designed for a wide range of applications requiring high reliability and performance. It features a compact surface-mount package, making it suitable for modern electronic designs where space is a constraint.
Key Specifications
Parameter | Value |
---|---|
Transistor Type | NPN |
Package / Case | SOT-323 (TO-236AB) |
Mounting Type | Surface Mount |
Operating Temperature (TJ) | 150°C |
Frequency - Transition | 100 MHz |
Power - Max | 200 mW |
Voltage - Collector Emitter Breakdown (Max) | 50 V |
Current - Collector (Ic) (Max) | 100 mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250 mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 10 nA (ICBO) |
Key Features
- High Frequency Capability: With a transition frequency of 100 MHz, this transistor is suitable for high-frequency applications.
- Compact Package: The SOT-323 package makes it ideal for space-constrained designs.
- High Reliability: Designed to meet automotive standards (AEC-Q101), ensuring high reliability in demanding environments.
- Low Saturation Voltage: A maximum Vce saturation of 250 mV at specified currents, which is beneficial for low-voltage applications.
- High DC Current Gain: A minimum DC current gain (hFE) of 210 at 2 mA and 10 V, ensuring reliable amplification.
Applications
- Automotive Systems: Due to its AEC-Q101 qualification, it is suitable for various automotive applications requiring high reliability.
- Consumer Electronics: Used in audio amplifiers, switching circuits, and other general-purpose applications in consumer electronics.
- Industrial Control Systems: Can be used in industrial control circuits, sensors, and actuators due to its robust performance.
- Communication Devices: Suitable for use in communication devices requiring high-frequency capability and low noise.
Q & A
- What is the transistor type of the 2PD601ASW,115?
The 2PD601ASW,115 is an NPN bipolar junction transistor (BJT).
- What is the maximum operating temperature of the 2PD601ASW,115?
The maximum operating temperature (TJ) is 150°C.
- What is the package type of the 2PD601ASW,115?
The package type is SOT-323 (TO-236AB).
- What is the maximum collector current of the 2PD601ASW,115?
The maximum collector current (Ic) is 100 mA.
- What is the transition frequency of the 2PD601ASW,115?
The transition frequency is 100 MHz.
- What is the DC current gain (hFE) of the 2PD601ASW,115?
The minimum DC current gain (hFE) is 210 at 2 mA and 10 V.
- What is the maximum collector-emitter breakdown voltage of the 2PD601ASW,115?
The maximum collector-emitter breakdown voltage is 50 V.
- Is the 2PD601ASW,115 RoHS compliant?
Yes, the 2PD601ASW,115 is RoHS compliant.
- What are some typical applications of the 2PD601ASW,115?
It is used in automotive systems, consumer electronics, industrial control systems, and communication devices.
- What is the maximum power dissipation of the 2PD601ASW,115?
The maximum power dissipation is 200 mW.
- What is the Vce saturation voltage of the 2PD601ASW,115?
The maximum Vce saturation voltage is 250 mV at specified currents.