2PD601ASW,115
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NXP USA Inc. 2PD601ASW,115

Manufacturer No:
2PD601ASW,115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA 2PD601ASW - SMALL S
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Product Introduction

Overview

The 2PD601ASW,115 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc., which was previously part of NXP USA Inc. This transistor is designed for a wide range of applications requiring high reliability and performance. It features a compact surface-mount package, making it suitable for modern electronic designs where space is a constraint.

Key Specifications

Parameter Value
Transistor Type NPN
Package / Case SOT-323 (TO-236AB)
Mounting Type Surface Mount
Operating Temperature (TJ) 150°C
Frequency - Transition 100 MHz
Power - Max 200 mW
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA, 10V
Vce Saturation (Max) @ Ib, Ic 250 mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 10 nA (ICBO)

Key Features

  • High Frequency Capability: With a transition frequency of 100 MHz, this transistor is suitable for high-frequency applications.
  • Compact Package: The SOT-323 package makes it ideal for space-constrained designs.
  • High Reliability: Designed to meet automotive standards (AEC-Q101), ensuring high reliability in demanding environments.
  • Low Saturation Voltage: A maximum Vce saturation of 250 mV at specified currents, which is beneficial for low-voltage applications.
  • High DC Current Gain: A minimum DC current gain (hFE) of 210 at 2 mA and 10 V, ensuring reliable amplification.

Applications

  • Automotive Systems: Due to its AEC-Q101 qualification, it is suitable for various automotive applications requiring high reliability.
  • Consumer Electronics: Used in audio amplifiers, switching circuits, and other general-purpose applications in consumer electronics.
  • Industrial Control Systems: Can be used in industrial control circuits, sensors, and actuators due to its robust performance.
  • Communication Devices: Suitable for use in communication devices requiring high-frequency capability and low noise.

Q & A

  1. What is the transistor type of the 2PD601ASW,115?

    The 2PD601ASW,115 is an NPN bipolar junction transistor (BJT).

  2. What is the maximum operating temperature of the 2PD601ASW,115?

    The maximum operating temperature (TJ) is 150°C.

  3. What is the package type of the 2PD601ASW,115?

    The package type is SOT-323 (TO-236AB).

  4. What is the maximum collector current of the 2PD601ASW,115?

    The maximum collector current (Ic) is 100 mA.

  5. What is the transition frequency of the 2PD601ASW,115?

    The transition frequency is 100 MHz.

  6. What is the DC current gain (hFE) of the 2PD601ASW,115?

    The minimum DC current gain (hFE) is 210 at 2 mA and 10 V.

  7. What is the maximum collector-emitter breakdown voltage of the 2PD601ASW,115?

    The maximum collector-emitter breakdown voltage is 50 V.

  8. Is the 2PD601ASW,115 RoHS compliant?

    Yes, the 2PD601ASW,115 is RoHS compliant.

  9. What are some typical applications of the 2PD601ASW,115?

    It is used in automotive systems, consumer electronics, industrial control systems, and communication devices.

  10. What is the maximum power dissipation of the 2PD601ASW,115?

    The maximum power dissipation is 200 mW.

  11. What is the Vce saturation voltage of the 2PD601ASW,115?

    The maximum Vce saturation voltage is 250 mV at specified currents.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:290 @ 2mA, 10V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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Same Series
2PD601ARW,115
2PD601ARW,115
TRANS NPN 50V 0.1A SOT323
2PD601AQ,115
2PD601AQ,115
TRANS NPN 50V 0.1A SMT3
2PD601AQW,115
2PD601AQW,115
TRANS NPN 50V 0.1A SC70
2PD601AR,115
2PD601AR,115
TRANS NPN 50V 0.1A SMT3
2PD601AS,115
2PD601AS,115
TRANS NPN 50V 0.1A SMT3

Similar Products

Part Number 2PD601ASW,115 2PD601AQW,115 2PD601ARW,115 2PD601AS,115
Manufacturer NXP USA Inc. NXP USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Obsolete Active Obsolete
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO) 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 290 @ 2mA, 10V 160 @ 2mA, 10V 210 @ 2mA, 10V 290 @ 2mA, 10V
Power - Max 200 mW 200 mW 200 mW 250 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-323 SC-70 SOT-323 SMT3; MPAK

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