PUMX1,115
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Nexperia USA Inc. PUMX1,115

Manufacturer No:
PUMX1,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 2NPN 40V 0.1A 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PUMX1,115 is a bipolar junction transistor (BJT) array produced by Nexperia USA Inc. This component is designed as a dual NPN transistor array, making it suitable for a variety of applications where multiple transistors are required in a compact form factor. The device is packaged in a 6-TSSOP (Thin Shrink Small Outline Package) surface mount configuration, which reduces board space and enhances design flexibility.

Key Specifications

ParameterValue
Transistor TypeDual NPN BJT Array
Maximum Collector-Emitter Voltage40V
Maximum Collector Current100mA
Maximum Frequency100MHz
Maximum Power Dissipation300mW
Package Type6-TSSOP

Key Features

  • Compact 6-TSSOP package, reducing board space by approximately 75% and allowing more design flexibility.
  • Low collector-emitter saturation voltage, enhancing performance in switching and amplification applications.
  • High collector current capability, making it suitable for applications requiring moderate current handling.

Applications

The PUMX1,115 is versatile and can be used in various electronic circuits, including but not limited to:

  • Switching circuits where low saturation voltage and high current capability are beneficial.
  • Amplifier circuits requiring dual NPN transistors in a compact package.
  • Automotive and industrial control systems where space efficiency and reliability are crucial.

Q & A

  1. What is the PUMX1,115? The PUMX1,115 is a dual NPN bipolar junction transistor (BJT) array produced by Nexperia USA Inc.
  2. What is the package type of the PUMX1,115? The PUMX1,115 is packaged in a 6-TSSOP surface mount configuration.
  3. What is the maximum collector current of the PUMX1,115? The maximum collector current is 100mA.
  4. What is the maximum collector-emitter voltage of the PUMX1,115? The maximum collector-emitter voltage is 40V.
  5. What is the maximum frequency of the PUMX1,115? The maximum frequency is 100MHz.
  6. What are the key features of the PUMX1,115? It features a compact package, low collector-emitter saturation voltage, and high collector current capability.
  7. In what types of applications is the PUMX1,115 commonly used? It is commonly used in switching circuits, amplifier circuits, and in automotive and industrial control systems.
  8. How does the PUMX1,115 reduce board space? The 6-TSSOP package reduces board space by approximately 75% compared to larger packages.
  9. What is the maximum power dissipation of the PUMX1,115? The maximum power dissipation is 300mW.
  10. Where can I find detailed specifications for the PUMX1,115? Detailed specifications can be found on the official Nexperia website, Digi-Key, Mouser Electronics, and other authorized distributors.

Product Attributes

Transistor Type:2 NPN (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):40V
Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
Power - Max:300mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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Similar Products

Part Number PUMX1,115 PUMZ1,115 PUMX2,115 PEMX1,115 PUMT1,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Not For New Designs Active
Transistor Type 2 NPN (Dual) NPN, PNP 2 NPN (Dual) 2 NPN (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 150mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 40V 40V 50V 40V 40V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA 200mV @ 5mA, 50mA 250mV @ 5mA, 50mA 200mV @ 5mA, 50mA 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V 120 @ 1mA, 6V 120 @ 1mA, 6V 120 @ 1mA, 6V 120 @ 1mA, 6V
Power - Max 300mW 300mW 300mW 300mW 300mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 SOT-563, SOT-666 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP 6-TSSOP 6-TSSOP SOT-666 6-TSSOP

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