Overview
The PUMH2/DG/B4X, produced by Nexperia USA Inc., is a pre-biased bipolar transistor (BJT) featuring two NPN transistors in a single package. This dual transistor is designed to simplify circuit design and reduce the component count in various electronic applications. It is housed in a 6-TSSOP (SC-88, SOT-363) surface mount package, making it suitable for compact and efficient designs.
Key Specifications
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
|---|---|
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5 mA, 5 V |
| Vce Saturation (Max) @ Ib, Ic | 150 mV @ 500 µA, 10 mA |
| Current - Collector Cutoff (Max) | 1 µA |
| Frequency - Transition | 230 MHz |
| Power - Max | 300 mW |
| Mounting Type | Surface Mount |
| Package/Case | 6-TSSOP, SC-88, SOT-363 |
Key Features
- Built-in Bias Resistors: The PUMH2/DG/B4X includes integrated base and emitter resistors, simplifying circuit design and reducing the need for external components.
- High Current Capability: The transistor can handle up to 100 mA of collector current, making it suitable for a variety of applications.
- High Voltage Handling: With a maximum collector-emitter breakdown voltage of 50 V, this transistor is robust and reliable in various operating conditions.
- Compact Packaging: The 6-TSSOP package is ideal for space-constrained designs, offering a compact solution without compromising performance.
- High Frequency Operation: The transistor has a transition frequency of 230 MHz, making it suitable for high-frequency applications.
Applications
- Automotive Electronics: The PUMH2/DG/B4X can be used in various automotive applications, including control circuits and signal processing due to its high reliability and compliance with automotive standards.
- Industrial Control Systems: This transistor is suitable for industrial control systems, motor control, and power management due to its high current and voltage handling capabilities.
- Consumer Electronics: It can be used in consumer electronics such as audio amplifiers, switching circuits, and other general-purpose applications requiring reliable and efficient transistor performance.
- Robotics and IoT Devices: The compact size and high performance of the PUMH2/DG/B4X make it an ideal choice for robotics and IoT devices where space and efficiency are critical.
Q & A
- What is the maximum collector current of the PUMH2/DG/B4X?
The maximum collector current is 100 mA.
- What is the maximum collector-emitter breakdown voltage of the PUMH2/DG/B4X?
The maximum collector-emitter breakdown voltage is 50 V.
- What type of resistors are integrated into the PUMH2/DG/B4X?
The transistor includes built-in base (R1) and emitter (R2) resistors, each with a value of 47 kOhms.
- What is the transition frequency of the PUMH2/DG/B4X?
The transition frequency is 230 MHz.
- What is the maximum power dissipation of the PUMH2/DG/B4X?
The maximum power dissipation is 300 mW.
- What package types are available for the PUMH2/DG/B4X?
The transistor is available in 6-TSSOP, SC-88, and SOT-363 packages.
- What are the typical applications of the PUMH2/DG/B4X?
Typical applications include automotive electronics, industrial control systems, consumer electronics, and robotics/IoT devices.
- How does the built-in bias resistor simplify circuit design?
The built-in bias resistors reduce the need for external components, simplifying the circuit design and reducing the overall component count.
- What is the DC current gain (hFE) of the PUMH2/DG/B4X?
The DC current gain (hFE) is 80 at 5 mA and 5 V.
- What is the Vce saturation voltage of the PUMH2/DG/B4X?
The Vce saturation voltage is 150 mV at 500 µA and 10 mA.
