PMEG2005AESFYL
  • Share:

Nexperia USA Inc. PMEG2005AESFYL

Manufacturer No:
PMEG2005AESFYL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 20V 0.5A SOD962
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMEG2005AESFYL is a high-performance Schottky diode produced by Nexperia USA Inc. This component is designed to offer low forward voltage drop and fast recovery times, making it suitable for a variety of applications requiring efficient power management. The diode is packaged in a compact 0201 (0603 Metric) surface mount package, enhancing its usability in space-constrained designs.

Key Specifications

Product Attribute Attribute Value
Manufacturer Nexperia
Voltage - Forward (Vf) (Max) @ If 550 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max) 20 V
Technology Schottky
Supplier Device Package DSN0603-2
Package / Case 0201 (0603 Metric)
Mounting Type Surface Mount
Current - Reverse Leakage @ Vr 45 µA @ 20 V
Current - Average Rectified (Io) 500 mA
Capacitance @ Vr, F 25 pF @ 1 V, 1 MHz
Operating Temperature - Junction 150°C (Max)
Reverse Recovery Time (trr) 1.9 ns
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Key Features

  • Low Forward Voltage Drop: The PMEG2005AESFYL features a low forward voltage drop of 550 mV at 500 mA, reducing power losses in applications.
  • Fast Recovery Time: With a reverse recovery time of 1.9 ns, this diode ensures fast switching times, making it suitable for high-frequency applications.
  • Compact Package: The 0201 (0603 Metric) surface mount package allows for efficient use of board space, making it ideal for compact designs.
  • High Junction Temperature: The diode can operate up to a junction temperature of 150°C, enhancing its reliability in demanding environments.
  • Environmental Compliance: The component is ROHS3 compliant, REACH unaffected, and has an ECCN of EAR99, ensuring it meets various regulatory standards.

Applications

  • Power Management: Suitable for power supply circuits, voltage regulators, and DC-DC converters due to its low forward voltage drop and fast recovery time.
  • Automotive Electronics: Can be used in automotive applications requiring high reliability and performance, such as in power systems and safety circuits.
  • Industrial Automation: Applicable in industrial automation systems, including motor drives, power supplies, and control circuits.
  • Consumer Electronics: Used in various consumer electronic devices where efficient power management is crucial, such as in smartphones, laptops, and other portable devices.

Q & A

  1. What is the maximum forward voltage drop of the PMEG2005AESFYL?

    The maximum forward voltage drop is 550 mV at 500 mA.

  2. What is the maximum DC reverse voltage of the PMEG2005AESFYL?

    The maximum DC reverse voltage is 20 V.

  3. What is the package type of the PMEG2005AESFYL?

    The package type is 0201 (0603 Metric) surface mount.

  4. What is the reverse recovery time of the PMEG2005AESFYL?

    The reverse recovery time is 1.9 ns.

  5. What is the maximum junction temperature of the PMEG2005AESFYL?

    The maximum junction temperature is 150°C.

  6. Is the PMEG2005AESFYL ROHS compliant?

    Yes, it is ROHS3 compliant.

  7. What is the average rectified current (Io) of the PMEG2005AESFYL?

    The average rectified current (Io) is 500 mA.

  8. What is the capacitance at Vr, F for the PMEG2005AESFYL?

    The capacitance at Vr, F is 25 pF @ 1 V, 1 MHz.

  9. What is the moisture sensitivity level (MSL) of the PMEG2005AESFYL?

    The moisture sensitivity level (MSL) is 1 (Unlimited).

  10. What is the ECCN classification of the PMEG2005AESFYL?

    The ECCN classification is EAR99.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):500mA
Voltage - Forward (Vf) (Max) @ If:550 mV @ 500 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):1.9 ns
Current - Reverse Leakage @ Vr:45 µA @ 20 V
Capacitance @ Vr, F:25pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:0201 (0603 Metric)
Supplier Device Package:DSN0603-2
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.41
8

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG2005AESFYL PMEG3005AESFYL PMEG2005ESFYL PMEG2005AESFCYL
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky -
Voltage - DC Reverse (Vr) (Max) 20 V 30 V 20 V -
Current - Average Rectified (Io) 500mA 500mA 500mA -
Voltage - Forward (Vf) (Max) @ If 550 mV @ 500 mA 630 mV @ 500 mA 620 mV @ 500 mA -
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) -
Reverse Recovery Time (trr) 1.9 ns 1.37 ns 1.9 ns -
Current - Reverse Leakage @ Vr 45 µA @ 20 V 80 µA @ 30 V 3.5 µA @ 20 V -
Capacitance @ Vr, F 25pF @ 1V, 1MHz 22pF @ 1V, 1MHz 25pF @ 1V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case 0201 (0603 Metric) 0201 (0603 Metric) 0201 (0603 Metric) -
Supplier Device Package DSN0603-2 DSN0603-2 DSN0603-2 -
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) -

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

BZX384-B10,115
BZX384-B10,115
Nexperia USA Inc.
DIODE ZENER 10V 300MW SOD323
BC869,115
BC869,115
Nexperia USA Inc.
TRANS PNP 20V 1A SOT89
PBSS5350X,135
PBSS5350X,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
PBSS4160TVL
PBSS4160TVL
Nexperia USA Inc.
TRANS NPN 60V 1A TO236AB
PMST3904/ZLF
PMST3904/ZLF
Nexperia USA Inc.
PMST3904/ZLF
BC857-QR
BC857-QR
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
BUK9212-55B,118
BUK9212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
74HC4851D-Q100,118
74HC4851D-Q100,118
Nexperia USA Inc.
IC MUX/DEMUX 8CH ANLG 16SOIC
IP4791CZ12,132
IP4791CZ12,132
Nexperia USA Inc.
IC INTERFACE SPECIALIZED 12HXSON
74HC244D-Q100,118
74HC244D-Q100,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74HCT273D-Q100J
74HCT273D-Q100J
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20SO
74LVC273D,112
74LVC273D,112
Nexperia USA Inc.
NEXPERIA 74LVC273D - D FLIP-FLOP