Overview
The PMBT5551,235 is an NPN high-voltage transistor manufactured by Nexperia USA Inc. This transistor is packaged in a SOT23 plastic package, making it suitable for surface-mount applications. It is designed to operate in a variety of electronic systems, particularly where high voltage and moderate current handling are required. The PMBT5551,235 is part of Nexperia’s extensive portfolio of bipolar transistors, which are used across various industries including automotive, industrial, power, computing, and consumer electronics.
Key Specifications
| Parameter | Value |
|---|---|
| Type Number | PMBT5551 |
| Package | SOT23 (TO-236AB) |
| Collector-Emitter Voltage (VCEO) | 160 V |
| Collector Current (IC) | 300 mA |
| DC Collector/Base Gain (hfe) | 80 (minimum) |
| Junction Temperature (TJ) | 150 °C |
| Transition Frequency (fT) | 100 MHz (minimum) |
| Collector-Emitter Saturation Voltage | 200 mV |
| Power Dissipation (Ptot) | 250 mW |
| Automotive Qualified | No |
| RoHS Compliance | Yes, compliant with Directive 2011/65/EU and Chinese ACPEIP (CN RoHS) |
Key Features
- NPN high-voltage transistor in SOT23 package, suitable for surface-mount applications.
- High collector-emitter voltage (VCEO) of 160 V.
- Moderate collector current (IC) of up to 300 mA.
- Minimum DC collector/base gain (hfe) of 80.
- Maximum junction temperature (TJ) of 150 °C.
- Transition frequency (fT) of at least 100 MHz.
- Low collector-emitter saturation voltage of 200 mV.
- Power dissipation (Ptot) of 250 mW.
- Compliant with RoHS and other environmental regulations.
Applications
The PMBT5551,235 transistor is versatile and can be used in various applications across different industries, including:
- Automotive systems: For high-voltage and moderate current requirements.
- Industrial control systems: Where reliability and high voltage handling are necessary.
- Power management: In power supplies, voltage regulators, and other power management circuits.
- Consumer electronics: In audio amplifiers, switching circuits, and other high-voltage applications.
- Mobile and wearable devices: Where compact, high-performance components are required.
Q & A
- What is the package type of the PMBT5551,235 transistor?
The PMBT5551,235 is packaged in a SOT23 plastic package. - What is the maximum collector-emitter voltage (VCEO) of the PMBT5551,235?
The maximum collector-emitter voltage is 160 V. - What is the maximum collector current (IC) of the PMBT5551,235?
The maximum collector current is 300 mA. - What is the minimum DC collector/base gain (hfe) of the PMBT5551,235?
The minimum DC collector/base gain is 80. - What is the maximum junction temperature (TJ) of the PMBT5551,235?
The maximum junction temperature is 150 °C. - Is the PMBT5551,235 automotive qualified?
No, the PMBT5551,235 is not automotive qualified. - Is the PMBT5551,235 RoHS compliant?
Yes, the PMBT5551,235 is RoHS compliant. - What is the transition frequency (fT) of the PMBT5551,235?
The transition frequency is at least 100 MHz. - What is the collector-emitter saturation voltage of the PMBT5551,235?
The collector-emitter saturation voltage is 200 mV. - What is the power dissipation (Ptot) of the PMBT5551,235?
The power dissipation is 250 mW.
