Overview
The PEMD2,115, produced by Nexperia USA Inc., is a pre-biased bipolar transistor (BJT) that integrates one NPN and one PNP transistor in a single package. This dual transistor is designed to simplify circuit design and reduce the overall component count in electronic systems. The device is housed in a compact SOT-666 surface mount package, making it ideal for space-constrained applications.
Key Specifications
Parameter | Value |
---|---|
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Package / Case | SOT-666 |
Mounting Type | Surface Mount |
Power - Max | 300 mW |
Current - Collector (Ic) (Max) | 100 mA |
Current - Collector Cutoff (Max) | 1 µA |
Voltage - Collector Emitter Breakdown (Max) | 50 V |
Vce Saturation (Max) @ Ib, Ic | 150 mV @ 500 µA, 10 mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10 mA, 5 V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 4.7 kOhms |
Key Features
- Built-in Bias Resistors: The PEMD2,115 includes built-in bias resistors (4.7 kOhms for both base and emitter base), which simplify circuit design and reduce the number of external components required.
- Space and Cost Savings: By integrating two transistors and resistors in a single package, this device reduces component count and saves space on the PCB.
- High Current Capability: The device can handle up to 100 mA of collector current, making it suitable for a variety of applications.
- High Voltage Handling: With a maximum collector-emitter breakdown voltage of 50 V, this transistor is robust and can handle high voltage circuits.
Applications
The PEMD2,115 is versatile and can be used in various electronic systems, including:
- Automotive Systems: Suitable for 48V automotive board nets and other high voltage circuits subject to large spikes and pulses.
- Consumer Electronics: Ideal for use in audio amplifiers, switching circuits, and other consumer electronic devices.
- Industrial Control Systems: Can be used in control circuits, signal amplification, and other industrial applications.
Q & A
- What is the package type of the PEMD2,115?
The PEMD2,115 is packaged in a SOT-666 surface mount package.
- What is the maximum collector current of the PEMD2,115?
The maximum collector current is 100 mA.
- Does the PEMD2,115 have built-in bias resistors?
Yes, it includes built-in bias resistors of 4.7 kOhms for both base and emitter base.
- What is the maximum collector-emitter breakdown voltage of the PEMD2,115?
The maximum collector-emitter breakdown voltage is 50 V.
- What are the typical applications of the PEMD2,115?
It is used in automotive systems, consumer electronics, and industrial control systems).
- What is the power dissipation capability of the PEMD2,115?
The maximum power dissipation is 300 mW).
- Is the PEMD2,115 RoHS compliant?
Yes, the PEMD2,115 is RoHS compliant).
- What is the DC current gain (hFE) of the PEMD2,115?
The minimum DC current gain (hFE) is 30 at 10 mA and 5 V).
- How does the PEMD2,115 simplify circuit design?
It simplifies circuit design by integrating two transistors and built-in bias resistors, reducing the need for external components).
- What is the Vce saturation voltage of the PEMD2,115?
The Vce saturation voltage is 150 mV at 500 µA and 10 mA).