BSH203215
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Nexperia USA Inc. BSH203215

Manufacturer No:
BSH203215
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA SMALL SIGNAL FIELD-
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BSH203,215 is a P-channel vertical D-MOS logic level Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This device is packaged in a SOT23 plastic surface-mounted package, utilizing vertical D-MOS technology. It is designed and qualified for use in various applications including computing, communications, consumer, and industrial sectors. The BSH203,215 is known for its compact footprint, fast switching characteristics, and suitability for both logic level and low gate drive sources, making it an efficient choice for modern electronic designs.

Key Specifications

ParameterValue
Type numberBSH203
PackageSOT23
Channel typeP-channel
Number of transistors1
VDS [max] (V)30
VGS [max] (V)20
RDSon [max] @ VGS = 4.5 V; @25°C (mΩ)417
RDSon [max] @ VGS = 2.5 V (mΩ)650
Tj [max] (°C)150
ID [max] (A)0.47
QGD [typ] (nC)2.5
QG(tot) [typ] @ VGS = 4.5 V (nC)5.5
Ptot [max] (W)0.417
Qr [typ] (nC)1.5
VGSth [typ] (V)1.5

Key Features

  • Saves PCB space due to its small footprint in the SOT23 package.
  • Suitable for high frequency applications due to fast switching characteristics.
  • Compatible with logic level gate drive sources and very low gate drive sources voltage.
  • Optimal for battery powered applications.
  • Supports high-speed digital interfaces.

Applications

  • Battery powered applications.
  • High-speed digital interfaces.
  • Computing and communications systems.
  • Consumer electronics.
  • Industrial automation and control systems.

Q & A

  1. What is the BSH203,215? The BSH203,215 is a P-channel vertical D-MOS logic level Field-Effect Transistor (FET) in a SOT23 package.
  2. What are the key applications of the BSH203,215? It is used in computing, communications, consumer electronics, and industrial applications.
  3. What package type does the BSH203,215 use? It is packaged in a SOT23 plastic surface-mounted package.
  4. What are the maximum drain-source voltage (VDS) and gate-source voltage (VGS) for the BSH203,215? The maximum VDS is 30 V and the maximum VGS is 20 V.
  5. What is the typical on-resistance (RDSon) at VGS = 4.5 V? The typical RDSon at VGS = 4.5 V is 417 mΩ.
  6. Is the BSH203,215 suitable for high frequency applications? Yes, it is suitable due to its fast switching characteristics.
  7. Can the BSH203,215 be used in battery powered applications? Yes, it is optimal for battery powered applications.
  8. What is the maximum junction temperature (Tj) for the BSH203,215? The maximum Tj is 150°C.
  9. How many transistors are in the BSH203,215? There is 1 transistor in the BSH203,215.
  10. Is the BSH203,215 automotive qualified? No, it is not automotive qualified.

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