BSH203215
  • Share:

Nexperia USA Inc. BSH203215

Manufacturer No:
BSH203215
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA SMALL SIGNAL FIELD-
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSH203,215 is a P-channel vertical D-MOS logic level Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This device is packaged in a SOT23 plastic surface-mounted package, utilizing vertical D-MOS technology. It is designed and qualified for use in various applications including computing, communications, consumer, and industrial sectors. The BSH203,215 is known for its compact footprint, fast switching characteristics, and suitability for both logic level and low gate drive sources, making it an efficient choice for modern electronic designs.

Key Specifications

ParameterValue
Type numberBSH203
PackageSOT23
Channel typeP-channel
Number of transistors1
VDS [max] (V)30
VGS [max] (V)20
RDSon [max] @ VGS = 4.5 V; @25°C (mΩ)417
RDSon [max] @ VGS = 2.5 V (mΩ)650
Tj [max] (°C)150
ID [max] (A)0.47
QGD [typ] (nC)2.5
QG(tot) [typ] @ VGS = 4.5 V (nC)5.5
Ptot [max] (W)0.417
Qr [typ] (nC)1.5
VGSth [typ] (V)1.5

Key Features

  • Saves PCB space due to its small footprint in the SOT23 package.
  • Suitable for high frequency applications due to fast switching characteristics.
  • Compatible with logic level gate drive sources and very low gate drive sources voltage.
  • Optimal for battery powered applications.
  • Supports high-speed digital interfaces.

Applications

  • Battery powered applications.
  • High-speed digital interfaces.
  • Computing and communications systems.
  • Consumer electronics.
  • Industrial automation and control systems.

Q & A

  1. What is the BSH203,215? The BSH203,215 is a P-channel vertical D-MOS logic level Field-Effect Transistor (FET) in a SOT23 package.
  2. What are the key applications of the BSH203,215? It is used in computing, communications, consumer electronics, and industrial applications.
  3. What package type does the BSH203,215 use? It is packaged in a SOT23 plastic surface-mounted package.
  4. What are the maximum drain-source voltage (VDS) and gate-source voltage (VGS) for the BSH203,215? The maximum VDS is 30 V and the maximum VGS is 20 V.
  5. What is the typical on-resistance (RDSon) at VGS = 4.5 V? The typical RDSon at VGS = 4.5 V is 417 mΩ.
  6. Is the BSH203,215 suitable for high frequency applications? Yes, it is suitable due to its fast switching characteristics.
  7. Can the BSH203,215 be used in battery powered applications? Yes, it is optimal for battery powered applications.
  8. What is the maximum junction temperature (Tj) for the BSH203,215? The maximum Tj is 150°C.
  9. How many transistors are in the BSH203,215? There is 1 transistor in the BSH203,215.
  10. Is the BSH203,215 automotive qualified? No, it is not automotive qualified.

Product Attributes

Type:- 
Applications:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
498

Please send RFQ , we will respond immediately.

Same Series
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W00
DD26S20W00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

PESD5V0X1BCL315
PESD5V0X1BCL315
NXP Semiconductors
NOW NEXPERIA PESD5V0X1BCL TRANS
PCA9535CPW118
PCA9535CPW118
NXP USA Inc.
PARALLEL I/O PORT 16-BIT 16 I/
PCF7953ATT/M1AC1500118
PCF7953ATT/M1AC1500118
NXP USA Inc.
IC KEYLESS ENTRY/GO 28TSSOP
BC847CM315
BC847CM315
NXP Semiconductors
NOW NEXPERIA BC847CMB - SMALL SI
BAS21GW115
BAS21GW115
Nexperia USA Inc.
NOW NEXPERIA BAS21GW - HIGH-VOLT
BZV55-B47115
BZV55-B47115
NXP USA Inc.
NOW NEXPERIA BZV55-B43 - ZENER D
BC807K-40,235
BC807K-40,235
Nexperia USA Inc.
BC807K-40 - 45 V, 500 MA PNP GEN
74LVC1G125GV
74LVC1G125GV
NXP USA Inc.
NOW NEXPERIA 74LVC1G125GV - BUS
TJA1055T/3/1118
TJA1055T/3/1118
NXP USA Inc.
ENHANCED FAULT-TOLERANT CAN TRAN
PCA9539APW118
PCA9539APW118
NXP USA Inc.
IC GPIO EXPANDER 24TSSOP
JN5168-001-M03534
JN5168-001-M03534
NXP USA Inc.
ZIGBEE PRO AND IEEE802.15.4 MODU
PSMN2R9-30MLC115
PSMN2R9-30MLC115
NXP USA Inc.
NOW NEXPERIA PSMN2R9-30MLC 70A,

Related Product By Brand

PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F
BZX84-C4V3,235
BZX84-C4V3,235
Nexperia USA Inc.
DIODE ZENER 4.3V 250MW TO236AB
BC807RAZ
BC807RAZ
Nexperia USA Inc.
BC807RA/SOT1268/DFN1412-6
PUMH2/DG/B3,115
PUMH2/DG/B3,115
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V 6TSSOP
BC817-40QCH-QZ
BC817-40QCH-QZ
Nexperia USA Inc.
TRANS NPN 45V 0.5A DFN1412D-3
BC807-16HR
BC807-16HR
Nexperia USA Inc.
BC807-16H/SOT23/TO-236AB
BC846A-QVL
BC846A-QVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
PDTA114EU,115
PDTA114EU,115
Nexperia USA Inc.
TRANS PREBIAS PNP 200MW SOT323
BUK9K6R2-40E,115
BUK9K6R2-40E,115
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A LFPAK56D
PMV65XP,215
PMV65XP,215
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
74ABT16245BDGG,112
74ABT16245BDGG,112
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 48TSSOP
PDZ3.9BGW,118
PDZ3.9BGW,118
Nexperia USA Inc.
SINGLE ZENER DIODE IN A SOD123 P