PBSS5250X,115
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Nexperia USA Inc. PBSS5250X,115

Manufacturer No:
PBSS5250X,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 50V 2A SOT89
Delivery:
Payment:
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Product Introduction

Overview

The PBSS5250X,115 is a PNP low VCEsat transistor manufactured by Nexperia USA Inc. This transistor is designed for high-performance applications and is automotive qualified. It is packaged in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package, making it suitable for a variety of surface mount designs. The transistor is known for its low VCEsat characteristics, which enhance its efficiency in switching and amplification roles.

Key Specifications

SpecificationValue
TypePNP Bipolar Junction Transistor (BJT)
Voltage - Collector Emitter Breakdown (Max)50 V
Current - Collector (Max)2 A
DC Current Gain (HFE) (Min) @ IC, VCE200 @ 1 A, 2 V
VCE Saturation (Max) @ IB, IC320 mV @ 200 mA, 2 A
Frequency - Transition100 MHz
Power - Max1 W
Operating Temperature150°C (TJ)
Package / CaseSOT89 (SC-62)
Lead Free Status / RoHS StatusLead Free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)

Key Features

  • Low VCEsat: The transistor features a low VCEsat of 320 mV at 200 mA and 2 A, which reduces power losses and enhances efficiency.
  • High Current Capability: It can handle a maximum collector current of 2 A, making it suitable for high-current applications.
  • High Frequency Operation: With a transition frequency of 100 MHz, this transistor is suitable for high-frequency applications.
  • Automotive Qualified: The PBSS5250X,115 is qualified for automotive use, ensuring reliability in demanding automotive environments.
  • Lead-Free and RoHS Compliant: The transistor is lead-free and RoHS compliant, aligning with environmental regulations.

Applications

The PBSS5250X,115 is versatile and can be used in a variety of applications, including:

  • Automotive Systems: Suitable for use in automotive electronics due to its automotive qualification.
  • Power Switching: Ideal for power switching applications due to its low VCEsat and high current handling capability.
  • Amplification: Can be used in amplifier circuits where high current gain and low saturation voltage are required.
  • High-Frequency Circuits: Suitable for high-frequency applications such as RF amplifiers and oscillators.

Q & A

  1. What is the maximum collector current of the PBSS5250X,115 transistor?
    The maximum collector current is 2 A.
  2. What is the VCEsat of the PBSS5250X,115 transistor?
    The VCEsat is 320 mV at 200 mA and 2 A.
  3. What is the transition frequency of the PBSS5250X,115 transistor?
    The transition frequency is 100 MHz.
  4. Is the PBSS5250X,115 transistor RoHS compliant?
    Yes, the transistor is lead-free and RoHS compliant.
  5. What is the operating temperature range of the PBSS5250X,115 transistor?
    The operating temperature range is up to 150°C (TJ).
  6. What package type is the PBSS5250X,115 transistor available in?
    The transistor is available in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.
  7. Is the PBSS5250X,115 transistor suitable for automotive applications?
    Yes, it is automotive qualified.
  8. What is the moisture sensitivity level (MSL) of the PBSS5250X,115 transistor?
    The MSL is 1 (Unlimited).
  9. What is the maximum power handling of the PBSS5250X,115 transistor?
    The maximum power handling is 1 W.
  10. What is the DC current gain (HFE) of the PBSS5250X,115 transistor?
    The DC current gain (HFE) is 200 @ 1 A, 2 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:320mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1A, 2V
Power - Max:1 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89
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Similar Products

Part Number PBSS5250X,115 PBSS5350X,115 PBSS5250X,135 PBSS4250X,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type PNP PNP PNP NPN
Current - Collector (Ic) (Max) 2 A 3 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Vce Saturation (Max) @ Ib, Ic 320mV @ 200mA, 2A 390mV @ 300mA, 3A 320mV @ 200mA, 2A 320mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA 100nA 100nA (ICBO) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V 200 @ 1A, 2V 200 @ 1A, 2V 300 @ 1A, 2V
Power - Max 1 W 1.6 W 1 W 1 W
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89 SOT-89 SOT-89 SOT-89

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