PBSS4032PT,215
  • Share:

Nexperia USA Inc. PBSS4032PT,215

Manufacturer No:
PBSS4032PT,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 2.4A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS4032PT,215 is a PNP low VCEsat (BISS) transistor manufactured by Nexperia USA Inc. This transistor is designed for high-performance applications requiring low saturation voltage and high current handling. It is packaged in the SOT23 format, making it suitable for surface mount technology (SMT) assembly.

Key Specifications

ParameterValue
Transistor TypePNP
Collector-Emitter Voltage (VCE)30 V
Collector Current (IC)2.4 A
Saturation Voltage (VCEsat)Low VCEsat (BISS)
Transition Frequency (fT)160 MHz
Power Dissipation (Ptot)1.1 W
Package TypeSOT23 (TO-236AB)
Pitch and Tape4 mm pitch, 8 mm tape and reel

Key Features

  • Low saturation voltage (VCEsat) for reduced power losses.
  • High collector current (IC) of 2.4 A.
  • High transition frequency (fT) of 160 MHz, suitable for high-frequency applications.
  • Surface mount package (SOT23) for easy integration into SMT designs.
  • High power dissipation capability of 1.1 W.

Applications

The PBSS4032PT,215 transistor is suitable for a variety of applications, including:

  • Power switching and amplification in automotive and industrial systems.
  • High-frequency amplifiers and oscillators.
  • Motor control and power management circuits.
  • Audio and video equipment where low distortion and high current handling are required.

Q & A

  1. What is the collector-emitter voltage rating of the PBSS4032PT,215 transistor?
    The collector-emitter voltage rating is 30 V.
  2. What is the maximum collector current of the PBSS4032PT,215 transistor?
    The maximum collector current is 2.4 A.
  3. What is the package type of the PBSS4032PT,215 transistor?
    The package type is SOT23 (TO-236AB).
  4. What is the transition frequency of the PBSS4032PT,215 transistor?
    The transition frequency is 160 MHz.
  5. What is the power dissipation capability of the PBSS4032PT,215 transistor?
    The power dissipation capability is 1.1 W.
  6. Is the PBSS4032PT,215 transistor suitable for high-frequency applications?
    Yes, it is suitable due to its high transition frequency of 160 MHz.
  7. What is the saturation voltage characteristic of the PBSS4032PT,215 transistor?
    The transistor has a low VCEsat (BISS) characteristic.
  8. Can the PBSS4032PT,215 transistor be used in automotive applications?
    Yes, it can be used in automotive and industrial systems for power switching and amplification.
  9. Is the PBSS4032PT,215 transistor available in surface mount packaging?
    Yes, it is available in SOT23 surface mount packaging.
  10. Where can I find detailed specifications for the PBSS4032PT,215 transistor?
    Detailed specifications can be found in the datasheet available on Nexperia's official website and other electronic component distributors like Mouser and Digi-Key.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):2.4 A
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:330mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 1A, 2V
Power - Max:1.1 W
Frequency - Transition:160MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
0 Remaining View Similar

In Stock

$0.52
1,163

Please send RFQ , we will respond immediately.

Similar Products

Part Number PBSS4032PT,215 PBSS4032NT,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 2.4 A 2.6 A
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 330mV @ 200mA, 2A 320mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1A, 2V 300 @ 1A, 2V
Power - Max 1.1 W 1.1 W
Frequency - Transition 160MHz 180MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

Related Product By Categories

PMBT5550,235
PMBT5550,235
Nexperia USA Inc.
TRANS NPN 140V 0.3A TO236AB
BCX55-16,115
BCX55-16,115
Nexperia USA Inc.
TRANS NPN 60V 1A SOT89
BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
2SC3648T-TD-E
2SC3648T-TD-E
onsemi
TRANS NPN 160V 0.7A PCP
BFS19,235
BFS19,235
Nexperia USA Inc.
TRANS NPN 20V 0.03A TO236AB
BC846B/DG/B4215
BC846B/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847BQB-QZ
BC847BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX53-TP
BCX53-TP
Micro Commercial Co
TRANS PNP 80V 1A SOT89
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BC817K16WH6327XTSA1
BC817K16WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BC857BW/ZLX
BC857BW/ZLX
Nexperia USA Inc.
TRANS SOT323
PMBT4403/MIGVL
PMBT4403/MIGVL
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB

Related Product By Brand

PTVS8V5S1UR,115
PTVS8V5S1UR,115
Nexperia USA Inc.
TVS DIODE 8.5VWM 14.4VC CFP3
PRTR5V0U2AX,215
PRTR5V0U2AX,215
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
BAV70,235
BAV70,235
Nexperia USA Inc.
DIODE ARRAY GP 100V 215MA SOT23
BZX84-C9V1/DG/B4R
BZX84-C9V1/DG/B4R
Nexperia USA Inc.
DIODE ZENER 9.05V 250MW TO236AB
PDZ10B-QX
PDZ10B-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
PUMD10/ZLF
PUMD10/ZLF
Nexperia USA Inc.
TRANS PREBIAS
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
PMV65XP,215
PMV65XP,215
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
74LVC126APW,112
74LVC126APW,112
Nexperia USA Inc.
IC BUF NON-INVERT 3.6V 14TSSOP
74HCT04PW,118
74HCT04PW,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14TSSOP
74AHC373PW,118
74AHC373PW,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20TSSOP
74LV4094DB,112
74LV4094DB,112
Nexperia USA Inc.
IC 8ST SHIFT/STORE BUS 16-SSOP